IP Library Assignment 045267/0833
Patent Assignment
Reel/Frame 045267/0833

Supplement No. 7 to Patent Security Agreement

Recorded: 2018-02-06 Pages: 29
Assignor
MICRON TECHNOLOGY, INC.
Executed: 2018-01-23
Assignee
MORGAN STANLEY SENIOR FUNDING, INC., AS COLLATERAL AGENT
1300 THAMES STREET, 4TH FLOOR, BALTIMORE, MARYLAND, 21231
Covered Properties (396)
Apparatuses and Methods for an Operating System Cache in a Solid State Device
Semiconductor Devices and Methods of Fabrication
Integrated Memory Assemblies Comprising Multiple Memory Array Decks
Cell Disturb Prevention Using a Leaker Device
Apparatuses and Methods for Memory Alignment
A Construction of Integrated Circuitray and a Method of Forming an Elevationally-Extending Conductor Laterally Between a Pair of Structures
Semiconductor Die Assembly Having Heat Spreader That Extends Through Underlying Interposer and Related Technology
Memory Protocol
Apparatuses and Methods for Calibrating Adjustable Impedances of a Semiconductor Device
Board Edge Connector
Integrated Memory, Integrated Assemblies, and Methods of Forming Memory Arrays
Apparatuses and Methods for a Memory Device with Dual Common Data I/O Lines
Methods of Forming an Array of Capacitors, Methods of Forming an Array of Memory Cells Individually Comprising a Capacitor and a Transistor, Arrays of Capacitors, and Arrays of Memory Cells Individually Comprising a Capacitor and a Transistor
Methods of Forming an Array Comprising Pairs of Vertically Opposed Capacitors and Arrays Comprising Pairs of Vertically Opposed Capacitors
Arrays of Memory Cells Individually Comprising a Capacitor and an Elevationally-Extending Transistor, Methods of Morming a Tier of an Array of Memory Cells, and Methods of Forming an Array of Memory Cells Individually Comprising a Capacitor and an Elevationally-Extending Transistor
Memory Cells, Arrays of Two Transistor-One Capacitor Memory Cells, Methods of Forming an Array of Two Transistor-One Capacitor Memory Cells, and Methods Used in Fabricating Integrated Circuitry
Memory Cells and Methods of Forming a Capacitor
A Memory Cell, an Array of Memory Cells Individually Comprising a Capacitor and a Transistor with the Array Comprising Rows of Access Lines and Columns of Digit Lines, a 2T-1C Memory Cell, and Methods of Forming an Array of Capacitors and Access Transistors There-Above
Memory Cells, Integrated Structures and Memory Arrays
Directed Sanitization of Memory
Apparatuses and Methods for Providing Internal Clock Signals of Different Clock Frequencies in a Memory Device
Memory Protocol with Command Priority
Method for Manufacturing a Wafer Level Package
Application: 14/835,687 →
Publication: US 2017/0062240
Advanced Memory Interfaces and Methods
Application: 15/172,022 →
Publication: US 2016/0283122
Semiconductor Package with Embedded Mim Capacitor, and Method of Fabricating Thereof
Application: 15/396,817 →
Publication: US 2018/0190582
Mim Capacitor with Enhanced Capacitance
Application: 15/396,828 →
Publication: US 2018/0190761
Semiconductor Package and Method for Fabricating the Same
Application: 15/428,124 →
Publication: US 2018/0226333
Methods of Programming Different Portions of Memory Cells of a String of Series-Connected Memory Cells
Application: 15/569,854 →
Publication: US 2019/0066787
Systems and Methods to Selectively Connect Antennas to Receive and Backscatter Radio Frequency Signals
Application: 15/583,883 →
Publication: US 2017/0229758
Microprocessor Architecture Having Alternative Memory Access Paths
Application: 15/596,649 →
Publication: US 2017/0249253
Software Distribution Method and Apparatus
Application: 15/670,961 →
Publication: US 2018/0025134
Memory Decision Feedback Equalizer Testing
Application: 15/714,818 →
Publication: US 2019/0097846
Apparatuses and Methods Involving Accessing Distributed Sub-Blocks of Memory Cells
Application: 15/720,960 →
Publication: US 2018/0122443
Analog Assisted Digital Switch Regulator
Application: 15/721,985 →
Publication: US 2018/0048234
Methods and Apparatus for Providing Redundancy in Memory
Application: 15/721,994 →
Publication: US 2018/0047460
Sequential Memory Access Operations
Application: 15/722,054 →
Publication: US 2018/0046375
Memory Devices for Reading Memory Cells of Different Memory Planes
Application: 15/722,063 →
Publication: US 2018/0075913
Three Dimensional Memory and Methods of Forming the Same
Application: 15/722,580 →
Publication: US 2018/0047747
Autonomous Memory Architecture
Application: 15/722,624 →
Publication: US 2018/0024966
Systems and Methods for Threshold Voltage Modification and Detection
Application: 15/789,167 →
Virtual Partition Management in a Memory Device
Application: 15/790,690 →
Publication: US 2019/0121575
Host Accelerated Operations in Managed Nand Devices
Application: 15/790,794 →
Publication: US 2019/0121576
Namespaces Allocation in Non-Volatile Memory Devices
Application: 15/790,882 →
Publication: US 2019/0121547
On-Die Termination Architecture
Application: 15/790,896 →
Publication: US 2019/0121577
Namespace Size Adjustment in Non-Volatile Memory Devices
Application: 15/790,969 →
Publication: US 2019/0121543
Namespace Management in Non-Volatile Memory Devices
Application: 15/790,979 →
Publication: US 2019/0121548
Memory Sense Amplifiers and Memory Verification Methods
Application: 15/791,271 →
Publication: US 2018/0047446
Command Selection Policy
Application: 15/791,886 →
Publication: US 2019/0121545
Devices and Methods to Write Background Data Patterns in Memory Devices
Application: 15/792,473 →
Publication: US 2019/0122744
Memory Cell with Independently-Sized Electrode
Application: 15/792,842 →
Publication: US 2018/0047896
Systems, Devices, and Methods for Selective Communication Through an Electrical Connector
Application: 15/794,563 →
Publication: US 2018/0060268
Apparatuses Including Multiple Read Modes and Methods for Same
Application: 15/794,724 →
Publication: US 2018/0047434
Oxide Based Memory
Application: 15/795,488 →
Publication: US 2018/0068723
Assemblies Including Heat Dispersing Elements and Related Systems and Methods
Application: 15/795,690 →
Publication: US 2019/0132995
Connection Verification Technique
Application: 15/796,173 →
Publication: US 2018/0043450
Apparatus and Methods for Refreshing Memory
Application: 15/796,340 →
Memory Cells and Memory Arrays
Application: 15/796,611 →
Publication: US 2018/0308853
Backside Stealth Dicing Through Tape Followed by Front Side Laser Ablation Dicing Process
Application: 15/797,029 →
Integrated Memory Assemblies Comprising Multiple Memory Array Decks
Application: 15/797,462 →
Publication: US 2018/0218765
3DI Solder Cup
Application: 15/797,638 →
Publication: US 2019/0131260
Apparatuses and Methods to Selectively Perform Logical Operations
Application: 15/797,759 →
Publication: US 2018/0114551
Dynamic L2P Cache
Application: 15/797,812 →
Publication: US 2019/0129856
Method for 3D Ink Jet TCB Interconnect Control
Application: 15/797,900 →
Publication: US 2019/0131272
Memory Devices with Multiple Sets of Latencies and Methods for Operating the Same
Application: 15/798,083 →
Publication: US 2019/0129635
Methods of Forming Nanostructures Using Self-Assembled Nucleic Acids, and Nanostructures Thereof
Application: 15/798,672 →
Publication: US 2018/0061635
Common Pool Management
Application: 15/799,508 →
Publication: US 2019/0129641
End of Life Performance Throttling to Prevent Data Loss
Application: 15/799,577 →
Publication: US 2019/0130984
Block Read Count Voltage Adjustment
Application: 15/799,616 →
Publication: US 2019/0130980
Slc Page Read
Application: 15/799,655 →
Publication: US 2019/0130983
Systems and Methods for Maintaining Refresh Operations of Memory Banks Using a Shared Address Path
Application: 15/800,267 →
Nand Flash Thermal Alerting
Application: 15/800,958 →
Publication: US 2019/0129648
Uninterrupted Read of Consecutive Pages for Memory
Application: 15/801,148 →
Publication: US 2018/0143908
Peripheral Logic Circuits Under Dram Memory Arrays
Application: 15/802,016 →
Publication: US 2019/0131308
Selectable Trim Settings on a Memory Device
Application: 15/802,521 →
Publication: US 2019/0139618
Configurable Trim Settings on a Memory Device
Application: 15/802,551 →
Publication: US 2019/0138442
Trim Setting Determination for a Memory Device
Application: 15/802,597 →
Publication: US 2019/0139619
Trim Setting Determination on a Memory Device
Application: 15/802,652 →
Publication: US 2019/0138443
Semiconductor Device
Application: 15/803,313 →
Publication: US 2018/0061480
Anti-Eclipse Circuitry with Tracking of Floating Diffusion Reset Level
Application: 15/803,690 →
Publication: US 2018/0063452
Memory Arrays
Application: 15/804,981 →
Methods and Devices for Saving and/or Restoring a State of a Pattern-Recognition Processor
Application: 15/806,073 →
Publication: US 2018/0075165
Apparatuses and Methods for Compute Components Formed Over an Array of Memory Cells
Application: 15/806,123 →
Publication: US 2018/0130515
Multiple Data Channel Memory Module Architecture
Application: 15/806,217 →
Publication: US 2018/0060234
Semiconductor Device Assemblies Including Multiple Shingled Stacks of Semiconductor Dies
Application: 15/806,808 →
Publication: US 2019/0139934
Tracking and Correction of Timing Signals
Application: 15/808,508 →
Publication: US 2018/0068696
Ufs Based Idle Time Garbage Collection Management
Application: 15/808,567 →
Transistors and Memory Arrays
Application: 15/808,727 →
Publication: US 2018/0130807
Apparatuses and Methods for Repairing Memory Devices Including a Plurality of Memory Die and an Interface
Application: 15/808,771 →
Publication: US 2019/0138412
Memory Arrays Comprising Ferroelectric Capacitors
Application: 15/809,710 →
Publication: US 2018/0182764
Invert Operations Using Sensing Circuitry
Application: 15/810,430 →
Publication: US 2018/0068694
Computing Reduction and Prefix Sum Operations in Memory
Application: 15/810,880 →
Publication: US 2018/0067656
CAPACITOR HAVING BOTTOM ELECTRODE COMPRISING TiN
Application: 15/811,359 →
Publication: US 2019/0148067
Semiconductor Devices with Package-Level Configurability
Application: 15/811,572 →
Semiconductor Devices with Post-Probe Configurability
Application: 15/811,579 →
Cell Contact
Application: 15/812,274 →
Publication: US 2019/0148136
Memory Wear Leveling
Application: 15/812,932 →
Publication: US 2018/0067661
Systems and Methods for Performing a Write Pattern in Memory Devices
Application: 15/812,949 →
Publication: US 2019/0146869
Namespace Change Propagation in Non-Volatile Memory Devices
Application: 15/814,634 →
Namespace Encryption in Non-Volatile Memory Devices
Application: 15/814,679 →
Publication: US 2019/0146931
Namespace Mapping Optimization in Non-Volatile Memory Devices
Application: 15/814,785 →
Publication: US 2019/0146907
Electronic Device with a Fuse Read Mechanism
Application: 15/814,835 →
Capacitors and Integrated Assemblies Which Include Capacitors
Application: 15/814,882 →
Publication: US 2019/0148066
Namespace Mapping Structual Adjustment in Non-Volatile Memory Devices
Application: 15/814,934 →
Publication: US 2019/0146927
Apparatuses and Methods for Mixed Charge Pumps with Voltage Regulator Circuits
Application: 15/815,037 →
Publication: US 2018/0076710
Providing Energy Information to Memory
Application: 15/815,209 →
Publication: US 2018/0336146
Reclaimable Semiconductor Device Package and Associated Systems and Methods
Application: 15/815,521 →
Publication: US 2018/0090223
Memory Devices with Distributed Block Select for a Vertical String Driver Tile Architecture
Application: 15/816,484 →
Publication: US 2019/0156893
Semiconductor Device Including Fuse Circuit
Application: 15/816,889 →
Publication: US 2018/0075922
Semiconductor Device with a Multi-Layered Encapsulant and Associated Systems, Devices, and Methods
Application: 15/817,000 →
Publication: US 2019/0157111
Integrated Assemblies and Methods of Forming Integrated Assemblies
Application: 15/818,338 →
Publication: US 2018/0076209
Memory Cell, An Array Of Memory Cells Individually Comprising A Capacitor And A Transistor With The Array Comprising Rows Of Access Lines And Columns Of Digit Lines, A 2T-1C Memory Cell, And Methods Of Forming An Array Of Capacitors And Access Transistors There-Above
Application: 15/818,571 →
Publication: US 2018/0197862
Arrays Of Memory Cells Individually Comprising A Capacitor And An Elevationally-Extending Transistor, Methods Of Forming A Tier Of An Array Of Memory Cells, And Methods Of Forming An Array Of Memory Cells Individually Comprising A Capacitor And An Elevationally-Extending Transistor
Application: 15/818,934 →
Publication: US 2018/0195049
Data Categorization Based on Invalidation Velocities
Application: 15/819,692 →
Publication: US 2019/0155521
Last Written Page Searching
Application: 15/819,941 →
Publication: US 2019/0155744
Pulsed Integrator and Memory Techniques
Application: 15/821,240 →
Publication: US 2019/0156887
Comparison Operations in Memory
Application: 15/822,748 →
Publication: US 2018/0082756
Data Shifting
Application: 15/823,013 →
Publication: US 2018/0082719
Cross-Point Memory Cells, Non-Volatile Memory Arrays, Methods of Reading a Memory Cell, Methods of Programming a Memory Cell, Methods of Writing to and Reading from a Memory Cell, and Computer Systems
Application: 15/823,139 →
Publication: US 2018/0082730
Power Reduction Technique During Write Bursts
Application: 15/824,535 →
Systems and Methods for Temperature Sensor Access in Die Stacks
Application: 15/824,559 →
Publication: US 2019/0161341
Systems and Methods for Improving Write Preambles in Ddr Memory Devices
Application: 15/826,236 →
Publication: US 2019/0164593
Signal Training for Prevention of Metastability Due to Clocking Indeterminacy
Application: 15/826,404 →
Publication: US 2019/0164583
Comparing Input Data to Stored Data
Application: 15/827,019 →
Publication: US 2019/0164600
Methods of Forming an Array of Cross Point Memory Cells
Application: 15/827,059 →
Publication: US 2018/0090679
Operations on Memory Cells
Application: 15/827,119 →
Publication: US 2019/0164611
Wireless Devices and Systems Including Examples of Configuration During an Active Time Period
Application: 15/827,460 →
Publication: US 2019/0165999
Apparatuses and Methods for Current Limitation in Threshold Switching Memories
Application: 15/828,402 →
Publication: US 2018/0090204
Semiconductor Device Packages and Related Methods
Application: 15/828,819 →
Publication: US 2019/0172724
Semiconductor Devices, Memory Dies and Related Methods
Application: 15/829,420 →
Publication: US 2018/0083011
Semiconductor Devices with Duplicated Die Bond Pads and Associated Device Packages and Methods of Manufacture
Application: 15/829,428 →
Publication: US 2018/0082983
Wear Leveling in Solid State Drives
Application: 15/829,590 →
Publication: US 2019/0171372
Electronic Device with a Fuse-Read Trigger Mechanism
Application: 15/830,281 →
Publication: US 2019/0172546
Tcb Bond Tip Design to Mitigate Top Die Warpage and Solder Stretching Issue
Application: 15/830,648 →
Publication: US 2019/0172744
Semiconductor Device Assembly with Pillar Array
Application: 15/830,839 →
Publication: US 2019/0172725
Reprogrammable Non-Volatile Ferroelectric Latch for Use with a Memory Controller
Application: 15/831,076 →
Publication: US 2018/0102158
Memory Systems and Memory Programming Methods
Application: 15/831,096 →
Publication: US 2018/0090206
Data Movement Operations in Non-Volatile Memory
Application: 15/831,698 →
Publication: US 2019/0171558
Two-Part Programming Methods
Application: 15/831,718 →
Publication: US 2018/0096722
Input Buffer Circuit
Application: 15/832,431 →
Selectors on Interface Die for Memory Device
Application: 15/833,425 →
Publication: US 2018/0096734
Apparatuses and Methods for Providing Bias Signals According to Operation Modes as Supply Voltages Vary in a Semiconductor Device
Application: 15/833,643 →
Publication: US 2019/0172505
Apparatuses and Methods for Providing Bias Signals in a Semiconductor Device
Application: 15/833,688 →
Systems and Methods for Plate Voltage Regulation During Memory Array Access
Application: 15/833,713 →
Publication: US 2019/0172518
Wave Pipeline
Application: 15/834,279 →
Publication: US 2019/0180801
Skew Reduction of a Wave Pipeline in a Memory Device
Application: 15/834,315 →
Publication: US 2019/0180802
Apparatuses and Methods for Calibrating Adjustable Impedances of a Semiconductor Device
Application: 15/834,892 →
Publication: US 2018/0167055
Semiconductor Memory Device and Erase Method Including Changing Erase Pulse Magnitude for a Memory Array
Application: 15/835,129 →
Publication: US 2019/0180832
Apparatuses Having an Interconnect Extending from an Upper Conductive Structure, Through a Hole in Another Conductive Structure, and to an Underlying Structure
Application: 15/835,210 →
Publication: US 2019/0181053
Apparatuses and Methods for Concentrated Arrangement of Transistors of Multiple Amplifier Circuits
Application: 15/835,257 →
Publication: US 2019/0180810
Resistive Memory Cell Structures and Methods
Application: 15/836,978 →
Publication: US 2018/0108708
Read Threshold Voltage Selection
Application: 15/837,036 →
Publication: US 2018/0102146
Systems and Methods for Writing Zeros to a Memory Array
Application: 15/837,666 →
Publication: US 2019/0179552
Systems and Methods for Writing Zeros to a Memory Array
Application: 15/837,685 →
Publication: US 2019/0179560
Semiconductor Device Including a Clock Adjustment Circuit
Application: 15/837,881 →
Publication: US 2018/0102153
Apparatuses and Methods for Indicating an Operation Type Associated with a Power Management Event
Application: 15/838,048 →
Publication: US 2019/0179392
Ferroelectric Memory Cell Recovery
Application: 15/838,093 →
Publication: US 2018/0166151
Apparatuses and Methods for Removing Defective Energy Storage Cells from an Energy Storage Array
Application: 15/839,506 →
Publication: US 2018/0102653
Apparatuses and Methods for Data Transmission Offset Values in Burst Transmissions
Application: 15/839,531 →
Publication: US 2019/0181847
Inductive Testing Probe Apparatus for Testing Semiconductor Die and Related Systems and Methods
Application: 15/839,559 →
Publication: US 2019/0178933
Error Correction Code Scrub Scheme
Application: 15/839,617 →
Publication: US 2019/0179700
Ferroelectric Capacitor, Ferroelectric Field Effect Transistor, And Method Used In Forming An Electronic Component Comprising Conductive Material And Ferroelectric Material
Application: 15/840,251 →
Publication: US 2018/0102374
Apparatuses and Methods for Comparing a Current Representative of a Number of Failing Memory Cells
Application: 15/840,610 →
Publication: US 2018/0101427
Power Interrupt Management
Application: 15/840,646 →
Publication: US 2018/0101209
Performance Level Adjustments in Memory Devices Based on Workload Estimation
Application: 15/840,709 →
Publication: US 2019/0179547
Methods for Fabricating a Semiconductor Memory Device
Application: 15/840,972 →
Publication: US 2018/0102366
Apparatuses and Methods for Transistor Protection by Charge Sharing
Application: 15/841,107 →
Publication: US 2018/0108420
Apparatuses Including Memory Cells and Methods of Operation of Same
Application: 15/841,118 →
Publication: US 2018/0122472
APPARATUSES AND METHODS FOR CONFIGURING I/Os OF MEMORY FOR HYBRID MEMORY MODULES
Application: 15/841,126 →
Publication: US 2018/0107433
Method and Apparatus for Decoding Command Operations for a Semiconductor Device
Application: 15/841,131 →
Publication: US 2018/0108396
Decision Feedback Equalizer
Application: 15/841,144 →
Test Mode Circuit for Memory Apparatus
Application: 15/841,148 →
Publication: US 2018/0108429
Textured Memory Cell Structures
Application: 15/841,356 →
Publication: US 2018/0114902
Multilevel Addressing
Application: 15/841,378 →
Publication: US 2019/0188124
Memory Having a Static Cache and a Dynamic Cache
Application: 15/841,601 →
Publication: US 2018/0107603
Methods of Fabricating Conductive Traces and Resulting Structures
Application: 15/841,660 →
Publication: US 2019/0189507
Semiconductor Devices Including Conductive Lines and Methods of Forming the Semiconductor Devices
Application: 15/842,432 →
Publication: US 2018/0114751
Multi-Level Self-Selecting Memory Device
Application: 15/842,496 →
Publication: US 2019/0189203
Techniques to Access a Self-Selecting Memory Device
Application: 15/842,504 →
Publication: US 2019/0189206
Apparatuses and Methods for Subarray Addressing
Application: 15/842,597 →
Publication: US 2019/0189188
Providing Power Availability Information to Memory
Application: 15/843,195 →
Publication: US 2018/0108384
Methods of Incorporating Leaker Devices into Capacitor Configurations to Reduce Cell Disturb
Application: 15/843,278 →
Publication: US 2019/0189357
Ferroelectric Assemblies
Application: 15/843,402 →
Publication: US 2019/0189768
Methods Of Forming A Transistor And Methods Of Forming An Array Of Memory Cells
Application: 15/843,493 →
Publication: US 2019/0189515
Integrated Assemblies Having Anchoring Structures Proximate Stacked Memory Cells
Application: 15/843,509 →
Publication: US 2019/0189629
Techniques for Accessing an Array of Memory Cells to Reduce Parasitic Coupling
Application: 15/845,619 →
Publication: US 2019/0189190
Multi-Phase Clock Division
Application: 15/845,874 →
Publication: US 2019/0189183
Single Plate Configuration and Memory Array Operation
Application: 15/845,893 →
Publication: US 2019/0189177
Constructions Comprising Stacked Memory Arrays
Application: 15/845,938 →
Publication: US 2018/0122860
Charge Separation for Memory Sensing
Application: 15/846,373 →
Publication: US 2019/0189211
Apparatuses and Methods for Subrow Addressing
Application: 15/846,410 →
Publication: US 2019/0189185
Current Separation for Memory Sensing
Application: 15/846,765 →
Publication: US 2019/0189178
Providing Autonomous Vehicle Assistance
Application: 15/846,916 →
Publication: US 2019/0188493
Secure Message Including a Vehicle Private Key
Application: 15/846,982 →
Publication: US 2019/0190893
Vehicle Secure Messages Based on a Vehicle Private Key
Application: 15/847,073 →
Publication: US 2019/0184916
Implementing Safety Measures in Applications
Application: 15/847,201 →
Publication: US 2019/0185017
Secure Vehicle Control Unit Update
Application: 15/847,373 →
Publication: US 2019/0187291
Apparatuses and Methods for Forming Die Stacks
Application: 15/847,493 →
Publication: US 2018/0108645
Using Sacrificial Solids in Semiconductor Processing
Application: 15/847,512 →
Publication: US 2019/0189424
Apparatuses and Methods for Charging a Global Access Line Prior to Accessing a Memory
Application: 15/847,531 →
Publication: US 2018/0108421
Hydrosilylation in Semiconductor Processing
Application: 15/847,540 →
Publication: US 2019/0189455
Charge Mirror-Based Sensing for Ferroelectric Memory
Application: 15/847,583 →
Publication: US 2018/0114559
Gas Residue Removal
Application: 15/847,587 →
Publication: US 2019/0189425
Removing a Sacrificial Material via Sublimation in Forming a Semiconductor
Application: 15/847,601 →
Publication: US 2019/0189426
Solder Bond Site Including an Opening with Discontinuous Profile
Application: 15/847,687 →
Publication: US 2019/0074194
Freezing a Sacrificial Material in Forming a Semiconductor
Application: 15/847,705 →
Publication: US 2019/0189427
Assemblies Having Vertically-Stacked Conductive Structures
Application: 15/848,398 →
Semiconductor Devices Including Silver Conductive Materials
Application: 15/848,399 →
Publication: US 2018/0114901
Apparatuses Including Electrodes Having a Conductive Barrier Material and Methods of Forming Same
Application: 15/848,477 →
Publication: US 2018/0130948
Methods of Filling Horizontally-Extending Openings of Integrated Assemblies
Application: 15/848,612 →
Control of Display Device for Autonomous Vehicle
Application: 15/848,630 →
Publication: US 2019/0187809
Internal Clock Distortion Calibration Using Dc Component Offset of Clock Signal
Application: 15/848,796 →
Transistors Comprising At Least One Of GaP, GaN, and GaAs
Application: 15/848,982 →
Publication: US 2019/0189807
Utilizing Write Stream Attributes in Storage Write Commands
Application: 15/849,014 →
Publication: US 2019/0189167
Electronic Device with an Output Voltage Booster Mechanism
Application: 15/849,052 →
Electronic Device with a Charge Recycling Mechanism
Application: 15/849,098 →
Publication: US 2019/0190371
Electronic Device with a Charging Mechanism
Application: 15/849,137 →
Publication: US 2019/0190372
Non-Contact Measurement of Memory Cell Threshold Voltage
Application: 15/849,262 →
Publication: US 2019/0189237
Searching Data in Parallel Using Processor-in-Memory Devices
Application: 15/849,381 →
Publication: US 2018/0136855
Array Of Cross Point Memory Cells
Application: 15/850,132 →
Publication: US 2018/0122858
Nvdimm with Removable Storage
Application: 15/850,588 →
Publication: US 2019/0196725
Multi-Decks Memory Device Including Inter-Deck Switches
Application: 15/850,708 →
Publication: US 2019/0198109
Management of Strobe/Clock Phase Tolerances During Extended Write Preambles
Application: 15/850,744 →
Publication: US 2019/0198084
Voltage Reference Computations for Memory Decision Feedback Equalizers
Application: 15/850,965 →
Publication: US 2019/0198068
Dual Resistive-Material Regions for Phase Change Memory Devices
Application: 15/851,081 →
Publication: US 2018/0138406
Array Of Cross Point Memory Cells And Methods Of Forming An Array Of Cross Point Memory Cells
Application: 15/851,112 →
Publication: US 2018/0138239
Apparatuses and Methods for Providing Frequency Divided Clocks
Application: 15/851,126 →
Systems and Methods for Improving Fuse Systems in Memory Devices
Application: 15/851,129 →
Publication: US 2019/0198127
Methods of Processing Semiconductor Device Structures and Related Systems
Application: 15/851,178 →
Publication: US 2019/0198333
Methods for Processing Semiconductor Dice and Fabricating Assemblies Incorporating Same
Application: 15/851,304 →
Providing Autonomous Vehicle Maintenance
Application: 15/851,325 →
Publication: US 2019/0197795
Double Patterning Method to Form Sub-Lithographic Pillars
Application: 15/851,422 →
Publication: US 2018/0114813
Elevationally-Extending Strings Of Memory Cells Individually Comprising A Programmable Charge Storage Transistor And Methods Of Processing Silicon Nitride-Comprising Materials
Application: 15/851,532 →
Publication: US 2018/0114795
Programmatically Identifying a Personality of an Autonomous Vehicle
Application: 15/851,730 →
Publication: US 2019/0197177
Arrays Of Memory Cells And Methods Of Forming An Array Of Memory Cells
Application: 15/852,275 →
Publication: US 2018/0122859
Semiconductor Devices Having Electrically and Optically Conductive Vias, and Associated Systems and Methods
Application: 15/852,339 →
Memory Cells, Arrays Of Two Transistor-One Capacitor Memory Cells, Methods Of Forming An Array Of Two Transistor-One Capacitor Memory Cells, And Methods Used In Fabricating Integrated Circuitry
Application: 15/852,870 →
Publication: US 2018/0197864
Conductive Structures and Assemblies Having Vertically-Stacked Memory Cells Over Conductive Structures
Application: 15/852,955 →
Publication: US 2019/0198518
Assemblies Having Vertically-Extending Structures
Application: 15/852,989 →
Publication: US 2019/0198519
Auto-Referenced Memory Cell Read Techniques
Application: 15/853,328 →
Publication: US 2019/0198096
Auto-Referenced Memory Cell Read Techniques
Application: 15/853,364 →
Publication: US 2019/0198099
Systems, Methods and Devices for Programming a Multilevel Resistive Memory Cell
Application: 15/853,423 →
Publication: US 2018/0130530
Physical Unclonable Function Using Message Authentication Code
Application: 15/853,498 →
Publication: US 2019/0199525
Interconnect Structures for Preventing Solder Bridging, and Associated Systems and Methods
Application: 15/853,512 →
Apparatuses and Methods for Duty Cycle Error Correction of Clock Signals
Application: 15/853,514 →
Publication: US 2019/0198075
Adjustable Delay Circuit for Optimizing Timing Margin
Application: 15/853,553 →
Publication: US 2018/0123573
Material Implication Operations in Memory
Application: 15/853,803 →
Publication: US 2019/0198105
Memory Cells and Semiconductor Devices Including Ferroelectric Materials
Application: 15/854,334 →
Publication: US 2018/0137905
Half Density Ferroelectric Memory and Operation
Application: 15/854,529 →
Publication: US 2018/0122452
Memory Arrays and Methods of Forming Memory Arrays
Application: 15/854,534 →
Publication: US 2018/0138238
Apparatus and Methods for via Connection with Reduced via Currents
Application: 15/854,598 →
Publication: US 2018/0192517
Multi-Level Signaling in Memory with Wide System Interface
Application: 15/854,600 →
Publication: US 2019/0044764
Apparatuses and Methods for Concurrently Accessing Multiple Memory Planes of a Memory During a Memory Access Operation
Application: 15/854,622 →
Publication: US 2018/0136845
Three-Dimensional Memory Apparatuses and Methods of Use
Application: 15/854,656 →
Publication: US 2018/0138240
Methods of Programming Memories Having a Shared Resistance Variable Material
Patent: 9,990,994 →
Application: 15/854,916 →
Publication: US 2018/0122473
Systems Having a Resistive Memory Device
Patent: 9,990,995 →
Application: 15/854,934 →
Publication: US 2018/0122474
Memory Cells and Memory Arrays
Application: 15/855,089 →
Publication: US 2019/0198509
Techniques for Sensing Logic Values Stored in Memory Cells Using Sense Amplifiers That Are Selectively Isolated from Digit Lines
Application: 15/855,152 →
Publication: US 2018/0137906
Determination of Reliability of Vehicle Control Commands via Memory Test
Application: 15/855,175 →
Publication: US 2019/0193745
Ground Reference Scheme for a Memory Cell
Application: 15/855,326 →
Publication: US 2018/0190337
Determination of Reliability of Vehicle Control Commands via Redundancy
Application: 15/855,451 →
Publication: US 2019/0193746
Memory Device Write Circuitry
Application: 15/855,485 →
Systems and Methods for Performing Row Hammer Refresh Operations in Redundant Memory
Application: 15/855,514 →
Publication: US 2019/0198090
Temporary Carrier Debond Initiation, and Associated Systems and Methods
Application: 15/855,622 →
Publication: US 2019/0198377
Parallel Access Techniques Within Memory Sections Through Section Independence
Application: 15/855,643 →
Publication: US 2018/0137907
Data Transfer Techniques for Multiple Devices on a Shared Bus
Application: 15/855,649 →
Publication: US 2018/0136873
Conductive Hard Mask for Memory Device Formation
Application: 15/855,657 →
Publication: US 2018/0138400
Methods Used In Forming At Least A Portion Of At Least One Conductive Capacitor Electrode Of A Capacitor That Comprises A Pair Of Conductive Capacitor Electrodes Having A Capacitor Insulator There-Between And Methods Of Forming A Capacitor
Application: 15/855,665 →
Publication: US 2019/0198606
Thermal Insulation for Three-Dimensional Memory Arrays
Application: 15/855,666 →
Publication: US 2018/0204879
Thermal Insulation for Three-Dimensional Memory Arrays
Application: 15/855,669 →
Publication: US 2018/0204880
Apparatuses and Methods for Sensing a Phase-Change Test Cell and Determining Changes to the Test Cell Resistance Due to Thermal Exposure
Application: 15/855,671 →
Publication: US 2018/0122464
Apparatuses and Methods for Sensing a Phase-Change Test Cell and Determining Changes to the Test Cell Resistance Due to Thermal Exposure
Application: 15/855,712 →
Publication: US 2018/0122465
Determination of Reliability of Vehicle Control Commands using a Voting Mechanism
Application: 15/855,734 →
Publication: US 2019/0193747
Apparatuses and Methods for Power Efficient Driver Circuits
Application: 15/855,849 →
Publication: US 2018/0130508
Three-Dimensional Memory Apparatus and Method of Manufacturing the Same
Application: 15/855,958 →
Publication: US 2018/0138241
Charge Loss Failure Mitigation
Application: 15/856,132 →
Apparatus and Method for Instant-on Quadra-Phase Signal Generator
Application: 15/856,244 →
Publication: US 2018/0123574
Components and Systems for Cleaning a Tool for Forming a Semiconductor Device, and Related Methods
Application: 15/856,373 →
Publication: US 2019/0201945
Security of User Data Stored in Shared Vehicles
Application: 15/856,522 →
Publication: US 2019/0202399
Power Reduction Technique During Read/Write Bursts
Application: 15/856,826 →
Memory Controller Implemented Error Correction Code Memory
Application: 15/856,910 →
Publication: US 2019/0205206
Techniques to Update a Trim Parameter in Non-Volatile Memory
Application: 15/857,054 →
Publication: US 2019/0205030
Techniques for Precharging a Memory Cell
Application: 15/857,091 →
Publication: US 2019/0206455
Drift Mitigation with Embedded Refresh
Application: 15/857,125 →
Apparatuses for Reducing Off State Leakage Currents
Application: 15/857,144 →
Publication: US 2018/0123577
Jitter Cancellation with Automatic Performance Adjustment
Application: 15/857,157 →
Polarity-Conditioned Memory Cell Write Operations
Application: 15/857,188 →
Publication: US 2019/0206489
Methods of Forming Semiconductor Structures Having Stair Step Structures
Application: 15/857,197 →
Apparatuses and Methods for Sense Line Architectures for Semiconductor Memories
Application: 15/857,327 →
Publication: US 2019/0206480
Resistive Random Access Memory Having Multi-Cell Memory Bits
Application: 15/857,370 →
Publication: US 2018/0122475
Methods of Storing and Retrieving Information for Rram with Multi-Cell Memory Bits
Application: 15/857,402 →
Publication: US 2018/0122476
Semiconductor Constructions
Application: 15/857,422 →
Publication: US 2018/0219153
Apparatuses and Methods for Providing Data to a Configurable Storage Area
Application: 15/857,435 →
Publication: US 2018/0121356
Memory Arrays and Methods of Forming Memory Cells
Application: 15/857,448 →
Publication: US 2018/0123035
Methods and Apparatuses for Command Shifter Reduction
Application: 15/857,597 →
Publication: US 2018/0122439
Temperature-Based Memory Operations
Application: 15/857,704 →
Publication: US 2019/0206452
Semiconductor Device and Error Correction Method
Application: 15/857,838 →
Publication: US 2018/0122477
Semiconductor Structures Including Multi-Portion Liners
Application: 15/857,873 →
Publication: US 2018/0123036
Methods of Forming Semiconductor Devices Comprising Silicon Nitride on High Aspect Ratio Features
Application: 15/857,920 →
Publication: US 2018/0144927
Methods of Forming Integrated Assemblies
Application: 15/857,974 →
Publication: US 2019/0206736
Methods of Forming High Aspect Ratio Openings and Methods of Forming High Aspect Ratio Features
Application: 15/858,021 →
Publication: US 2019/0206723
Methods of Forming Staircase Structures
Application: 15/858,072 →
Semiconductor Devices Including Control Logic Structures, Electronic Systems, and Related Methods
Application: 15/858,128 →
Publication: US 2019/0206861
Distributed Architecture for Enhancing Artificial Neural Network
Application: 15/858,143 →
Publication: US 2019/0205744
Semiconductor Devices, and Related Control Logic Assemblies, Control Logic Devices, Electronic Systems, and Methods
Application: 15/858,188 →
Memory Cells, Memory Systems, and Memory Programming Methods
Application: 15/858,201 →
Publication: US 2018/0144792
Semiconductor Devices Including Control Logic Levels, and Related Memory Devices, Control Logic Assemblies, Electronic Systems, and Methods
Application: 15/858,229 →
Publication: US 2019/0206862
Construction Of Integrated Circuitry And A DRAM Construction
Application: 15/858,263 →
Publication: US 2019/0206876
Managing Partial Superblocks in a Nand Device
Application: 15/858,383 →
Publication: US 2019/0205043
Pillar-Last Methods for Forming Semiconductor Devices
Application: 15/858,501 →
Publication: US 2019/0206766
Self-Learning in Distributed Architecture for Enhancing Artificial Neural Network
Application: 15/858,505 →
Publication: US 2019/0205765
Multi-Gate String Drivers Having Shared Pillar Structure
Application: 15/858,509 →
Publication: US 2019/0206889
Semiconductor Device Assemblies Including Multiple Stacks of Different Semiconductor Dies
Application: 15/858,641 →
Publication: US 2019/0206835
Clamp Elements for Phase Change Memory Arrays
Application: 15/858,728 →
Publication: US 2018/0123039
Cell-Based Reference Voltage Generation
Application: 15/858,747 →
Publication: US 2018/0144783
Methods, Apparatuses, and Circuits for Programming a Memory Device
Application: 15/858,780 →
Publication: US 2018/0123037
Method, System, and Device for L-Shaped Memory Component
Application: 15/858,794 →
Publication: US 2018/0145250
Accessing Memory Cells in Parallel in a Cross-Point Array
Application: 15/858,801 →
Publication: US 2018/0190349
Cross-Point Memory and Methods for Fabrication of Same
Application: 15/858,811 →
Publication: US 2018/0138242
Dynamic Adjustment of Memory Cell Digit Line Capacitance
Application: 15/858,824 →
Publication: US 2018/0158501
Writing to Cross-Point Non-Volatile Memory
Application: 15/858,831 →
Publication: US 2018/0137908
Multi-Level Storage in Ferroelectric Memory
Application: 15/858,837 →
Publication: US 2018/0130513
Apparatuses for Modulating Threshold Voltages of Memory Cells
Application: 15/859,029 →
Publication: US 2018/0151206
Apparatuses and Methods for Photonic Communication and Photonic Addressing
Application: 15/859,106 →
Publication: US 2018/0120505
Transistors, Memory Cells and Semiconductor Constructions Comprising Ferroelectric Gate Dielectric
Application: 15/859,122 →
Publication: US 2018/0122917
Methods Comprising an Atomic Layer Deposition Sequence
Application: 15/860,388 →
Publication: US 2019/0206674
Memory Cells
Application: 15/861,286 →
Publication: US 2018/0145084
Method, Apparatus and System Providing a Storage Gate Pixel with High Dynamic Range
Application: 15/861,442 →
Publication: US 2018/0146146
Method for Stress Reduction in Semiconductor Package via Carrier
Application: 15/862,445 →
Publication: US 2019/0208647
Systems and Methods for Providing File Information in a Memory System Protocol
Application: 15/862,472 →
Publication: US 2018/0129442
I/O Buffer Offset Mitigation
Application: 15/864,069 →
Publication: US 2019/0214086
Memory Decision Feedback Equalizer Bias Level Generation
Application: 15/864,972 →
Publication: US 2019/0215198
Memory and Electronic Devices with Reduced Operational Energy in Chalcogenide Material
Application: 15/864,995 →
Publication: US 2018/0144796
Semiconductor Devices Including Stair-Step Structures
Application: 15/865,819 →
Publication: US 2018/0130738
Controlling Discharge of a Control Gate Voltage
Application: 15/866,982 →
Publication: US 2019/0206481
Stair Step Formation Using at Least Two Masks
Application: 15/867,017 →
Publication: US 2018/0130700
Method for Mount Tape Die Release System for Thin Die Ejection
Application: 15/867,071 →
Transistors Having Dielectric Material Containing Non-Hydrogenous Ions and Methods of Their Fabrication
Application: 15/867,089 →
Publication: US 2018/0130815
Removal of Metal
Application: 15/867,993 →
Publication: US 2018/0138033
Apparatuses and Methods for Maintaining a Duty Cycle Error Counter
Application: 15/868,232 →
Publication: US 2019/0214072
Power Management
Application: 15/868,299 →
Publication: US 2018/0136707
Access Line Management in a Memory Device
Application: 15/869,501 →
Publication: US 2018/0137921
Methods for Independent Memory Bank Maintenance and Memory Devices and Systems Employing the Same
Application: 15/870,657 →
Voltage Correction Computations for Memory Decision Feedback Equalizers
Application: 15/871,636 →
Methods and Systems for Data Analysis in a State Machine
Application: 15/871,660 →
Publication: US 2018/0137416
Computerized Apparatus with a High Speed Data Bus
Application: 15/871,699 →
Publication: US 2018/0198642
Compensating for Memory Input Capacitance
Application: 15/872,456 →
Uniform Electrochemical Plating of Metal Onto Arrays of Pillars Having Different Lateral Densities and Related Technology
Application: 15/872,845 →
Publication: US 2018/0174993
Monitoring Error Correction Operations Performed in Memory
Application: 15/873,024 →
Publication: US 2018/0143875
Methods of Forming Resistive Memory Elements
Application: 15/873,584 →
Publication: US 2018/0145254
Data Storage Management
Application: 15/873,615 →
Publication: US 2018/0143765
Data Transfer in Sensing Components
Application: 15/874,117 →
Publication: US 2018/0144779
Semiconductor Device Packages with Direct Electrical Connections and Related Methods
Application: 15/874,406 →
Publication: US 2018/0158751
Determining Soft Data for Fractional Digit Memory Cells
Application: 15/874,529 →
Publication: US 2018/0144791
Methods of Forming Semiconductor Device Structures Including Staircase Structures
Application: 15/875,407 →
Publication: US 2018/0145029
Performance Allocation among Users for Accessing Non-volatile Memory Devices
Application: 15/875,944 →
Publication: US 2019/0227718
Apparatuses and Methods for Refreshing Memory of a Semiconductor Device
Application: 15/875,985 →
Publication: US 2019/0228814
Management of Storage Resources Allocated from Non-volatile Memory Devices to Users
Application: 15/876,066 →
Publication: US 2019/0227921
Methods of Patterning a Target Layer
Application: 15/876,386 →
Publication: US 2018/0144937
Solid State Storage Device with Command and Control Access
Application: 15/876,387 →
Publication: US 2018/0159692
Apparatuses and Methods for Calculating Row Hammer Refresh Addresses in a Semiconductor Device
Application: 15/876,566 →
Publication: US 2019/0228815
Enhanced Error Correcting Code Capability Using Variable Logical to Physical Associations of a Data Block
Application: 15/877,008 →
Publication: US 2019/0227869
Semiconductor Devices with Seed and Magnetic Regions and Methods of Fabrication
Application: 15/877,064 →
Publication: US 2018/0145112
Interconnections for 3D Memory
Application: 15/878,121 →
Publication: US 2018/0151201
Identifying a Read Operation for a Storage Device Based on a Workload of a Host System
Application: 15/878,315 →
Publication: US 2019/0227743
Variable Modulation Scheme
Application: 62/567,011 →
Multiplexing Distinct Signals on a Single Pin
Application: 62/567,016 →
Multiple Concurrent Modulation Schemes in a Memory System
Application: 62/567,018 →
Simplified Package Including Stacked Dies
Application: 62/567,021 →
Memory System That Supports Dual-Mode Modulation
Application: 62/567,028 →
Reconfigurable Memory Architectures
Application: 62/576,520 →
Frame Protocol of Memory Device
Application: 62/576,530 →
Apparatuses and Methods for Identifying Memory Devices of a Semiconductor Device Sharing an External Resistance
Application: 62/578,847 →
System Having a Hybrid Threading Processor, a Hybrid Threading Fabric Having Configurable Computing Elements, and a Hybrid Interconnection Network
Application: 62/579,749 →
Memory Devices and Systems with Parallel Impedance Adjustment Circuitry and Methods for Operating the Same
Application: 62/583,608 →
Multi-Port Storage-Class Memory Interface
Application: 62/587,026 →
Methods for on-Die Memory Termination and Memory Devices and Systems Employing the Same
Application: 62/590,096 →
Methods for on-Die Memory Termination and Memory Devices and Systems Employing the Same
Application: 62/590,116 →
System, Apparatus, and Related Method for Generating a Geospatial Interactive Composite Web-Based Image Map
Application: 62/591,352 →
Apparatuses and Methods Including Memory Commands for Semiconductor Memories
Application: 62/592,208 →
Diagonal Block Mapping
Application: 62/593,758 →
Devices Having a Transistor and a Capacitor Along a Common Horizontal Level, and Methods of Forming Devices
Application: 62/595,912 →
Translation System for Finer Grain Memory Architectures
Application: 62/597,304 →
Assemblies Having Conductive Structures Along Pillars of Semiconductor Material, and Methods of Forming Integrated Circuitry
Application: 62/609,875 →
Assemblies Comprising Memory Cells and Select Gates; and Methods of Forming Assemblies
Application: 62/609,884 →
Memory Arrays, and Methods of Forming Memory Arrays
Application: 62/610,640 →
Memory Arrays, and Methods of Forming Memory Arrays
Application: 62/610,657 →
Programmable Charge Storage Transistor, An Array Of Elevationally Extending Strings Of Memory Cells, And A Method Of Forming An Array Of Elevationally Extending Strings of Memory Cells
Application: 62/610,846 →
Transistors And Arrays Of Elevationally-Extending Strings Of Memory Cells
Application: 62/610,847 →
Methods Of Forming A Channel Region Of A Transistor And Methods Used In Forming A Memory Array
Application: 62/610,851 →
Methods Of Forming An Array Of Elevationally-Extending Strings Of Memory Cells
Application: 62/610,854 →
Controlling Discharge of a Control Gate Voltage
Application: 62/610,972 →
Methods Of Forming An Array Of Elevationally-Extending Strings Of Memory Cells Individually Comprising A Programmable Charge-Storage Transistor
Application: 62/611,136 →
Recessed Access Devices And DRAM Constructions
Application: 62/611,336 →
Methods of Forming Integrated Circuit Well Structures
Application: 62/611,694 →
Circuit-Protection Devices
Application: 62/611,874 →
Methods for Independent Memory Bank Maintenance and Memory Devices and Systems Employing the Same
Application: 62/612,004 →
Related Assignments (18)
Other recorded transfers of the patents in this record — the chain of ownership.
Assignment of Assignor's Interest Aug 25, 2015
From: WU, TIEH-CHIANG; SHIH, SHING-YIH
To: INOTERA MEMORIES, INC.
Reel/Frame 036419/0255 →
Assignment of Assignor's Interest Jan 3, 2017
From: CHIANG, HSU; SHIH, NENG-TAI; WU, TIEH-CHIANG
To: INOTERA MEMORIES, INC.
Reel/Frame 040817/0646 →
Assignment of Assignor's Interest Jan 3, 2017
From: SHIH, SHING-YIH; KUAN, SHIH-FAN; WU, TIEH-CHIANG
To: INOTERA MEMORIES, INC.
Reel/Frame 040833/0020 →
Assignment of Assignor's Interest Feb 9, 2017
From: SHIH, SHING-YIH
To: INOTERA MEMORIES, INC.
Reel/Frame 041208/0288 →
Assignment of Assignor's Interest Feb 27, 2017
From: INOTERA MEMORIES, INC.
To: MICRON TECHNOLOGY, INC.
Reel/Frame 041820/0815 →
Assignment of Assignor's Interest May 3, 2017
From: TUTTLE, JOHN R.
To: MICRON TECHNOLOGY, INC.
Reel/Frame 042225/0143 →
Assignment of Assignor's Interest Aug 24, 2017
From: BREWER, TONY; WALLACH, STEVEN
To: MICRON TECHNOLOGY, INC.
Reel/Frame 043385/0398 →
Assignment of Assignor's Interest Sep 26, 2017
From: SREERAMANENI, RAGHUKIRAN; TAYLOR, JENNIFER E.; LIU, LIANG
To: MICRON TECHNOLOGY, INC.
Reel/Frame 043691/0318 →
Change of Name Oct 24, 2017
From: INOTERA MEMORIES, INC.
To: MICRON TECHNOLOGY TAIWAN, INC.
Reel/Frame 044786/0588 →
Change of Name Oct 24, 2017
From: INOTERA MEMORIES, INC.
To: MICRON TECHNOLOGY TAIWAN, INC.
Reel/Frame 044802/0082 →
Change of Name Oct 24, 2017
From: INOTERA MEMORIES, INC.
To: MICRON TECHNOLOGY TAIWAN, INC.
Reel/Frame 044283/0711 →
Assignment of Assignor's Interest Oct 27, 2017
From: LIANG, KE; XU, JUN
To: MICRON TECHNOLOGY, INC.
Reel/Frame 043966/0264 →
Assignment of Assignor's Interest Jan 30, 2018
From: MICRON TECHNOLOGY TAIWAN, INC.
To: MICRON TECHNOLOGY, INC.
Reel/Frame 044777/0233 →
Assignment of Assignor's Interest Feb 1, 2018
From: MICRON TECHNOLOGY TAIWAN, INC.
To: MICRON TECHNOLOGY, INC.
Reel/Frame 044801/0990 →
Assignment of Assignor's Interest Feb 2, 2018
From: MICRON TECHNOLOGY TAIWAN, INC.
To: MICRON TECHNOLOGY, INC.
Reel/Frame 044822/0445 →
Security Interest Jul 13, 2018
From: MICRON TECHNOLOGY, INC.; MICRON SEMICONDUCTOR PRODUCTS, INC.
To: JPMORGAN CHASE BANK, N.A., AS COLLATERAL AGENT
Reel/Frame 047540/0001 →
Release of Security Interest Oct 10, 2019
From: MORGAN STANLEY SENIOR FUNDING, INC., AS COLLATERAL AGENT
To: MICRON TECHNOLOGY, INC.
Reel/Frame 050716/0678 →
Release of Security Interest Nov 12, 2019
From: JPMORGAN CHASE BANK, N.A., AS COLLATERAL AGENT
To: MICRON TECHNOLOGY, INC.; MICRON SEMICONDUCTOR PRODUCTS, INC.
Reel/Frame 051028/0001 →