Selectable trim settings on a memory device
View Patent ↗The present disclosure includes apparatuses and methods related to selectable trim settings on a memory device. An example apparatus can store a number of sets of trim settings and select a particular set of trims settings of the number of sets of trim settings based on desired operational characteristics for the array of memory cells.
1. An apparatus, comprising:
an array of memory cells; and
a controller, wherein the controller is coupled to the array of memory cells and includes control circuitry configured to:
store a number of sets of trim settings; and
select a particular set of trims settings of the number of sets of trim settings including particular trim setting parameters based on desired operational characteristics for the array of memory cells, wherein the particular trim setting parameters include programming signal magnitude, sensing signal magnitude, erase signal magnitude, programming signal length, erase signal length, and sensing signal length.
2. The apparatus of claim 1 , wherein the number of sets of trim settings are each configured to provide particular operational characteristics for the array of memory cells.
3. The apparatus of claim 1 , wherein the operational characteristics include programming operation speed for the array of memory cells.
4. The apparatus of claim 1 , wherein the operational characteristics include life span for the array of memory cells.
5. The apparatus of claim 1 , wherein the operational characteristics include data retention characteristics for the array of memory cells.
6. The apparatus of claim 1 , wherein the operational characteristics include storage density characteristics for the array of memory cells.
7. The apparatus of claim 1 , the particular set of trim settings is selected by a host.
8. An apparatus, comprising:
an array of memory cells; and
a controller, wherein the controller is coupled to the array of memory cells and includes control circuitry configured to:
operate the array of memory cells using a particular set of trims settings, including particular trim setting parameters, selected based on desired operational characteristics for the array of memory cells, wherein the particular trim setting parameters include number of bits per cell and number of programming signals in a programming operation.
9. The apparatus of claim 8 , wherein the particular set of trim settings are selected from a number of sets of trim settings based on the desired operational characteristics associated with the particular set of trim settings.
10. The apparatus of claim 8 , wherein the particular set of trim settings are configured to provide desired data retention characteristics for static data.
11. The apparatus of claim 8 , wherein the particular set of trim settings are configured to provide desired programming speed characteristics for dynamic data.
12. The apparatus of claim 8 , wherein the particular set of trim setting are selected from a group of sets of trim settings and wherein each particular set of trims settings provides particular operational characteristics for the array of memory cells.
13. The apparatus of claim 8 , the particular set of trim setting are selected from a group of sets of trim settings stored as a look up table in the controller.
14. A method, comprising:
receiving an input selecting a set of trim settings, including trim setting parameters, for a memory device, wherein the trim setting parameters include number of bits per cell and number of sensing signals in a sensing operation; and
sending the set of trim settings indicated by the input to the memory device, wherein the memory device has a number of operational characteristics associated with the set of trim settings.
15. The method of claim 14 , furthering including selecting the set of trim settings based on how the memory device will be used.
16. The method of claim 14 , furthering including selecting the set of trim settings based on where the memory device will be used.
17. The method of claim 14 , furthering including selecting the set of trim settings based on desired power consumption for the memory device.
18. The method of claim 14 , furthering including selecting the set of trim settings from a group of sets of trim settings.
19. The method of claim 14 , wherein selecting the set of trims settings includes selecting trim settings for a life span of the memory device.
20. A method, comprising:
selecting a set of trim settings, including trim setting parameters, for a memory device from a group of sets of trim settings based on desired operational characteristics of the memory device, wherein the trim setting parameters include an allowable programming operation rate.
21. The method of claim 20 , further including storing the group of sets of trim settings for selection in a controller.
22. The method of claim 20 , further including selecting the set of trim settings with a particular allowable programming operation rate, a particular programming signal magnitude, and a particular programming signal length to manage a life span of the memory device.
23. The method of claim 20 , further including selecting the set of trim settings with a particular programming signal magnitude and a particular programming signal length to manage data retention characteristics of the memory device.
24. The method of claim 20 , further including selecting the set of trim settings with a particular number of bits per memory cell and a particular number of programming signals in a programming operation to manage storage density of the memory device.
25. The method of claim 20 , further including selecting the set of trim settings with a particular programming signal magnitude, a particular sensing signal magnitude, a particular erase signal magnitude, a particular programming signal length, a particular erase signal length, a particular sensing signal length, a particular number of sensing signals in a sensing operation, a particular number of programming signals in a programming operation, and a particular number of bits per memory cell to manage disturb characteristics of the memory device.
26. The method of claim 20 , further including selecting the set of trim settings with a particular number of programming signals in a programming operation, a particular allowable programming operation rate, a particular programming signal magnitude, and a particular programming signal length to manage a programming speed of the memory device.
27. The method of claim 20 , further including selecting the set of trim settings with a particular programming signal magnitude, a particular sensing signal magnitude, a particular erase signal magnitude, a particular programming signal length, a particular erase signal length, a particular sensing signal length, a particular number of sensing signals in a sensing operation, a particular number of programming signals in a programming operation to manage power consumption of the memory device.
28. The method of claim 20 , further including selecting the set of trim settings with a particular number of sensing signals in a sensing operation, a particular sensing signal magnitude, a particular sensing signal length to manage a sensing speed of the memory device.
29. The method of claim 20 , further including selecting the set of trim settings with a particular programming signal magnitude, a particular sensing signal magnitude, a particular erase signal magnitude, a particular programming signal length, a particular erase signal length, a particular sensing signal length, a particular number of sensing signals in a sensing operation, and a particular number of programming signals in a programming operation device to account for a temperature of the memory device.