Dual resistive-material regions for phase change memory devices
In various examples, dual resistive-material regions for a phase change material region are fabricated by initially forming a resistive material. Prior to forming the phase change material region over the resistive material, at least an upper portion of the resistive material is exposed to an implantation or plasma that increases the resistance of an upper portion of the resistive material relative to the remainder, or bulk, of the resistive material. As a result, in certain embodiments, the portion of the resistive material proximate to the phase change material region may be used as a heater because of a relatively, high resistance value of the resistive material, but the bulk of the resistive material has a relatively lower resistance value and, thus, does not increase the voltage drop and current usage of the device. Other methods and devices are disclosed.
1. A phase change device, comprising:
a dielectric layer extending over a conductive material, the dielectric layer having a first opening therethrough;
a dielectric spacer within the first opening in the dielectric layer, the spacer defining a second opening;
at least one resistive material within the second opening to form a heater having two regions, a top surface region and a bulk region, the top surface region having a higher resistance than the bulk region, wherein the top surface region is recessed below the uppermost portion of the dielectric layer; and
a phase change material comprising a chalcogenide alloy, the phase change material programmable between different phase states having different resistances, the phase change material overlying the at least one resistive material, the phase change material having a first portion extending within the second opening to contact the recessed top surface region, the phase change material filling the second opening to at least the height of the uppermost portion of the dielectric layer, the phase change material having a smaller lateral dimension adjacent the top surface region than at the height of the uppermost portion of the dielectric layer; and
a select device having a lower electrode above the phase change material, a switching material above the lower electrode, and an upper electrode above the switching material.
2. The phase change memory device of claim 1 , further comprising a column line coupled to the upper electrode of the select device.
3. The phase change memory device of claim 1 , wherein the switching material comprises a chalcogenide alloy.
4. The phase change memory device of claim 1 , wherein the conductive material is coupled to the bulk region.
5. The phase change memory device of claim 4 , wherein the conductive material comprises a row line.
6. The phase change memory device of claim 1 , wherein the phase change material comprises a chalcogenide material.
7. The phase change memory device of claim 1 , wherein the top surface region comprises titanium silicon nitride and the bulk region comprises titanium nitride, the top surface region having a smaller volume than the bulk region.
8. The phase change memory device of claim 1 , wherein an uppermost surface of the phase change material is substantially coplanar with an uppermost surface of the dielectric layer.
9. The phase change memory device of claim 1 , wherein the top surface region of the at least one resistive material has silicon atoms contained therein.
10. The phase change memory device of claim 1 , wherein the top surface region of the at least one resistive material has a higher concentration of oxygen atoms than the bulk region.
11. The phase change memory device of claim 1 , wherein the heater is configured to change a resistance of the phase change material by applying a signal to at least the conductive material.
12. The phase change memory device of claim 1 , wherein the top surface region comprises one or more surface layers of the at least one resistive material.