Semiconductor device packages and related methods

1. A method of making semiconductor device packages, comprising:

stacking semiconductor dice on laterally spaced regions of integrated circuitry on an active surface of a semiconductor wafer, a first semiconductor die in each stack located proximate the semiconductor wafer being connected through thermo-compression bonds to a region of integrated circuitry of the semiconductor wafer, each stack of the semiconductor dice including electrically conductive elements exposed on a side thereof opposite the semiconductor wafer;

testing each stack of the semiconductor dice via the electrically conductive elements;

singulating semiconductor device modules comprising stacks of the semiconductor dice and a region of integrated circuitry of the semiconductor wafer;

electrically connecting sets of the semiconductor device modules confirmed to be operative during testing through electrically conductive elements of the regions of integrated circuitry opposite stacks of semiconductor dice to electrical connections of corresponding laterally adjacent package locations on a surface of a support structure;

at least partially surrounding side surfaces of the semiconductor dice of each semiconductor module on the surface of the support structure in a molding material after singulating the semiconductor device modules and electrically connecting the sets of the semiconductor device modules to the electrical connections of the corresponding laterally adjacent package locations on the surface of the support structure;

electrically connecting the sets of the semiconductor device modules confirmed to be operative during testing to electrical connections of corresponding package locations on a surface of another support structure on exposed surfaces of the side of the semiconductor device modules opposite the support structure; and

singulating semiconductor device packages each comprising a set of the semiconductor device modules and a corresponding location of the support structure.

2. The method of claim 1 , further comprising placing a thermal management device on at least one set of semiconductor device modules on a side thereof opposite the support structure.

3. The method of claim 2 , wherein placing the thermal management device on the at least one set of semiconductor device modules is effected before singulation of the semiconductor device packages.

4. The method of claim 1 , further comprising forming conductive elements operatively connected to the electrical connections of the support structure on a side thereof opposite the set of semiconductor devices modules after singulating the semiconductor device packages.

5. The method of claim 1 ,

wherein electrically connecting the sets of semiconductor device modules to electrical connections of the corresponding package locations on the surface of the support structure comprises electrically connecting the sets of semiconductor device modules to the corresponding package locations on the surface of a redistribution layer; and

further comprising forming the redistribution layer prior to the electrically connecting the sets of semiconductor device modules.

6. The method of claim 5 , further comprising:

forming the redistribution layer on a carrier; and

electrically connecting the sets of semiconductor device modules to the redistribution layer supported on the carrier.

7. The method of claim 1 , further comprising forming the semiconductor dice prior to the stacking thereof by:

fabricating through vias in another semiconductor wafer comprising an active surface bearing integrated circuitry and an inactive surface located on a side of the another semiconductor wafer opposite the active surface;

placing a first set of electrically conductive elements connected to the through vias on the active surface;

placing a second set of electrically conductive elements connected to the through vias on the inactive surface; and

singulating the semiconductor dice from one another.

8. The method of claim 7 , wherein fabricating the through vias in the another semiconductor wafer comprises forming blind holes extending from the active surface toward the inactive surface and at least partially filling the blind holes with an electrically conductive material.

9. The method of claim 8 ,

further comprising thinning the another semiconductor wafer to remove semiconductor material thereof from the inactive surface to expose the electrically conductive material located within the blind holes.

10. The method of claim 7 , further comprising placing a non-conductive film over a surface of the another semiconductor wafer on a side thereof to face the semiconductor wafer for the stacking prior to singulation of the another semiconductor wafer.

11. The method of claim 1 , further comprising forming the semiconductor wafer prior to the stacking of semiconductor dice thereon by:

fabricating through vias in regions bearing integrated circuitry of another semiconductor wafer comprising an active surface and an inactive surface located on a side of the another semiconductor wafer opposite the active surface;

placing a first set of electrically conductive elements connected to the through vias on the active surface; and

placing a second set of electrically conductive elements connected to the through vias on the inactive surface.