IP Library Granted Patent US 10,128,229
Granted Patent B1
US 10,128,229 · App. 15/811,572 · Granted Nov 13, 2018

Semiconductor devices with package-level configurability

Inventors: James E. Davis (Meridian, ID); John B. Pusey (Meridian, ID); Zhiping Yin (Boise, ID); Kevin G. Duesman (Boise, ID)
Assignee: Micron Technology, Inc.
H01L27/0292H01L24/13H01L24/48H01L24/49H01L25/0657H01L25/50H01L27/0288H01L27/115H01L28/40H01L2224/13028H01L2224/4845H01L2224/48145H01L2224/48227H01L2224/48464H01L2224/49112H01L2225/0651H01L2225/06506H01L2225/06527H01L2225/06562H01L2225/06565
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Quick Facts
Patent No.
US 10,128,229
App. No.
15/811,572
Granted
Nov 13, 2018
Kind
B1
Abstract

A semiconductor device assembly includes a substrate and a die coupled to the substrate. The die includes a first contact pad electrically coupled to a first circuit on the die including at least one active circuit element, and a second contact pad electrically coupled to a second circuit on the die including only passive circuit elements. The substrate includes a substrate contact electrically coupled to both the first and second contact pads. The semiconductor device assembly can further include a second die including a third contact pad electrically coupled to a third circuit on the second die including at least a second active circuit element, and a fourth contact pad electrically coupled to a fourth circuit on the second die including only passive circuit elements. The substrate contact can be electrically coupled to the third contact pad and electrically disconnected from the fourth contact pad.

Claims (20)

1. A semiconductor device assembly, comprising:

a substrate;

a first die coupled to the substrate, the first die including:

a first contact pad electrically coupled to a first circuit on the first die including at least one active circuit element,

a second contact pad electrically coupled to a second circuit on the first die including only passive circuit elements, and

a fifth contact pad electrically coupled to a fifth circuit on the first die including only passive circuit elements;

a second die including:

a third contact pad electrically coupled to a third circuit on the second die including at least a second active circuit element, and

a fourth contact pad electrically coupled to a fourth circuit on the second die including only passive circuit elements;

wherein the substrate includes a substrate contact electrically coupled to both the first contact pad and the second contact pad on the first die,

wherein the substrate contact is electrically coupled to the third contact pad on the second die,

wherein the fourth contact pad on the second die is electrically disconnected from the substrate contact, and

wherein the substrate contact is electrically coupled to the fifth contact pad on the first die.

2. The semiconductor device assembly of claim 1 , wherein the first and second dies are identical dies, wherein the first contact pad on the first die corresponds to the third contact pad on the second die, and the second contact pad on the first die corresponds to the fourth contact pad on the second die.

3. The semiconductor device assembly of claim 1 , wherein the first and second dies are stacked in a shingled configuration.

4. The semiconductor device assembly of claim 1 , wherein the first circuit is a driver circuit.

5. The semiconductor device assembly of claim 1 , wherein the second circuit includes one or more capacitors to provide electrostatic discharge (ESD) protection.

6. The semiconductor device assembly of claim 1 , wherein the substrate contact is electrically coupled to the first and second contact pads by one or more wirebonds.

7. The semiconductor device assembly of claim 1 , wherein the substrate contact is electrically coupled to the third contact pad by a wirebond between the first and third contact pads.

8. The semiconductor device assembly of claim 1 , wherein the first die is a NAND memory die.

Assignments (5)
RELEASE OF SECURITY INTEREST Recorded Nov 12, 2019
From: JPMORGAN CHASE BANK, N.A., AS COLLATERAL AGENT
To: MICRON TECHNOLOGY, INC.; MICRON SEMICONDUCTOR PRODUCTS, INC.
Reel/Frame 051028/0001 →
RELEASE OF SECURITY INTEREST Recorded Oct 10, 2019
From: MORGAN STANLEY SENIOR FUNDING, INC., AS COLLATERAL AGENT
To: MICRON TECHNOLOGY, INC.
Reel/Frame 050716/0678 →
SECURITY INTEREST Recorded Jul 13, 2018
From: MICRON TECHNOLOGY, INC.; MICRON SEMICONDUCTOR PRODUCTS, INC.
To: JPMORGAN CHASE BANK, N.A., AS COLLATERAL AGENT
Reel/Frame 047540/0001 →
SUPPLEMENT NO. 7 TO PATENT SECURITY AGREEMENT Recorded Feb 6, 2018
From: MICRON TECHNOLOGY, INC.
To: MORGAN STANLEY SENIOR FUNDING, INC., AS COLLATERAL AGENT
Reel/Frame 045267/0833 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Nov 14, 2017
From: DAVIS, JAMES E.; PUSEY, JOHN B.; YIN, ZHIPING; DUESMAN, KEVIN G.
To: MICRON TECHNOLOGY, INC.
Reel/Frame 044119/0622 →
Cited By (3)
US 12,199,061 US 12,244,137 US 12,374,674