IP Library Granted Patent US 10,381,087
Granted Patent B2
US 10,381,087 · App. 15/841,107 · Granted Aug 13, 2019

Apparatuses and methods for transistor protection by charge sharing

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Quick Facts
Patent No.
US 10,381,087
App. No.
15/841,107
Granted
Aug 13, 2019
Kind
B2
Abstract

Apparatuses and methods for protecting transistors through charge sharing are disclosed herein. An example apparatus includes a transistor comprising a gate node and a bulk node, a charge sharing circuit coupled between the gate and bulk nodes, and logic. The charge sharing circuit is configure to equalize charge differences between the gate and bulk nodes, and the logic is configured to enable the charge sharing circuit based at least in part on a combination of first and second signals, which indicate the presence of a condition.

Claims (42)

1. A method, comprising:

monitoring, by logic, for occurrence of a condition; and

based on the occurrence of the condition, coupling a gate node and a bulk node of a transistor and de-coupling the gate node and the bulk node from first and second voltages, respectively; and

responsive to the occurrence of the condition, providing a plurality of control signals to a charge sharing circuit, wherein the plurality of control signals comprise a power down signal and an erase operation signal, wherein monitoring, by the logic, for the occurrence of the condition comprises:

combining the power down signal and the erase operation signal to provide an output signal; and

providing the output signal to the logic for output of a control signal of the plurality of control signals.

2. The method of claim 1 , wherein the condition is the loss of power during an erase operation.

3. The method of claim 1 , wherein the transistor is one or more memory array transistors of a FLASH memory.

4. The method of claim 1 , further comprising generating a control signal responsive to occurrence of the condition, and wherein coupling the gate node and the bulk node of the transistor comprises enabling a charge sharing circuit coupled between the gate node and the bulk node of the transistor based on the control signal.

5. The method of claim 1 , wherein monitoring, by logic, for occurrence of a condition comprises:

receiving, by the logic, a power down signal and an erase operation signal;

combining, by the logic, the power down signal and the erase operation signal to provide an output signal; and

combining, by the logic, the output signal with a charge share circuit enable signal to provide the control signal.

6. The method of claim 5 , further comprising:

combining, by the logic, the output signal with an access line disconnect signal to provide a second control signal, and

providing, by the logic, the second control signal to a switch to disconnect the gate node of the transistor from a first voltage source.

7. The method of claim 5 , further comprising:

combining, by the logic, the output signal with a bulk node disconnect signal to provide a third control signal; and

providing, by the logic, the third control signal to a switch to disconnect the bulk node of the transistor from a second voltage source.

8. The method of claim 1 , wherein monitoring, by logic, for occurrence of a condition comprises:

receiving, by the logic, a power down signal and an erase operation signal;

combining, by the logic, the power down signal and the erase operation signal to provide an output signal to provide the control signal.

9. A method, comprising:

receiving a plurality of signals, the plurality of signals indicative of an operation being performed on a memory;

monitoring the plurality of signals for an occurrence of a condition; and

responsive to the occurrence of the condition, providing a plurality of control signals to a charge sharing circuit, wherein the plurality of control signals comprise a power down signal and an erase operation signal, wherein monitoring the plurality of signals for the occurrence of the condition comprises:

combining the power down signal and the erase operation signal to provide an output signal; and

providing the output signal to control logic for output of a control signal of the plurality of control signals.

10. The method of claim 9 , further comprising:

coupling a gate node and a bulk node of a transistor and de-coupling the gate node and the bulk node from first and second voltages, respectively.

11. The method of claim 10 , wherein the plurality of controls signals are indicative of coupling the gate node and the bulk node of the transistor and de-coupling the gate node and the bulk node from first and second voltages, respectively.

12. The method of claim 9 , wherein the control signal is indicative of disconnecting a bulk node of a transistor from a positive voltage.

13. The method of claim 9 , wherein the control signal is indicative of disconnecting a gate node of a transistor from a negative voltage.

14. The method of claim 9 , wherein the control signal is indicative of coupling a gate node and a bulk node of a transistor.

15. A method, comprising:

receiving a plurality of signals indicative of an operational mode;

detecting an occurrence of a condition based on the plurality of signals;

responsive to the occurrence of the condition, providing at least one control signal of a plurality of control signals to a charge sharing circuit based at least on the occurrence of the condition detected, wherein the plurality of control signals comprise a power down signal and an erase operation signal, wherein detecting the occurrence of the condition based on the plurality of signals comprises:

combining the power down signal and the erase operation signal to provide an output signal; and

providing the output signal to control logic for output of a control signal of the plurality of control signals.

16. The method claim 15 , wherein the operational mode is an erase operation on a memory.

17. The method claim 15 , wherein the occurrence of the condition comprises a change to a characteristic of the operational mode.

Assignments (5)
RELEASE OF SECURITY INTEREST Recorded Nov 12, 2019
From: JPMORGAN CHASE BANK, N.A., AS COLLATERAL AGENT
To: MICRON TECHNOLOGY, INC.; MICRON SEMICONDUCTOR PRODUCTS, INC.
Reel/Frame 051028/0001 →
RELEASE OF SECURITY INTEREST Recorded Oct 10, 2019
From: MORGAN STANLEY SENIOR FUNDING, INC., AS COLLATERAL AGENT
To: MICRON TECHNOLOGY, INC.
Reel/Frame 050716/0678 →
SECURITY INTEREST Recorded Jul 13, 2018
From: MICRON TECHNOLOGY, INC.; MICRON SEMICONDUCTOR PRODUCTS, INC.
To: JPMORGAN CHASE BANK, N.A., AS COLLATERAL AGENT
Reel/Frame 047540/0001 →
SUPPLEMENT NO. 7 TO PATENT SECURITY AGREEMENT Recorded Feb 6, 2018
From: MICRON TECHNOLOGY, INC.
To: MORGAN STANLEY SENIOR FUNDING, INC., AS COLLATERAL AGENT
Reel/Frame 045267/0833 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Dec 13, 2017
From: ZHANG, YAFENG; QIAO, LIANG; HOU, CHUNYUAN; XU, JUN
To: MICRON TECHNOLOGY, INC.
Reel/Frame 044390/0630 →