Using sacrificial solids in semiconductor processing
In an example, a method may include closing an opening in a structure with a sacrificial material at a first processing tool, moving the structure from the first processing tool to a second processing tool while the opening is closed, and removing the sacrificial material at the second processing tool. The structure may be used in semiconductor devices, such as memory devices.
1. A method of forming a semiconductor device, comprising:
forming a plurality of features in a structure using a dry removal tool;
closing openings between the features with a sacrificial material at the dry removal tool;
moving the structure to a wet cleaning tool; and
removing the sacrificial material and residue left from forming the plurality of features using the wet cleaning tool.
2. The method of claim 1 , wherein the sacrificial material is a dielectric material or a conductive material.
3. The method of claim 1 , wherein the sacrificial material is soluble in a solvent.
4. The method of claim 1 , wherein different portions of the dry removal tool are respectively located in different processing chambers, and the method further comprises:
forming the plurality of features in one of the chambers; and
closing the openings in the other one of the chambers.
5. A method of forming a semiconductor device, comprising:
forming a plurality of features in a structure using a dry removal tool;
closing openings between the features with a first sacrificial material at the dry removal tool;
moving the structure to a wet cleaning tool;
removing the first sacrificial material using the wet cleaning tool;
after removing the first sacrificial material, closing the openings with a second sacrificial material at the wet cleaning tool;
moving the structure to a deposition tool; and
removing second solid sacrificial material at the deposition tool by sublimation.
6. The method of claim 5 , further comprising after removing the second sacrificial material, using the deposition tool to form an additional material on the structure.
7. The method of claim 5 , wherein removing second solid sacrificial material by sublimation comprises setting a pressure and temperature at the deposition tool so the second solid sacrificial material sublimates.