IP Library Granted Patent US 10,410,710
Granted Patent B2
US 10,410,710 · App. 15/855,514 · Granted Sep 10, 2019

Systems and methods for performing row hammer refresh operations in redundant memory

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Quick Facts
Patent No.
US 10,410,710
App. No.
15/855,514
Granted
Sep 10, 2019
Kind
B2
Abstract

Steering logic circuitry includes bit-flipping logic that determines a first neighboring redundant word line adjacent to a redundant word line of a memory bank, which also includes normal word lines. Redundant word lines include main word lines, each of which includes paired word lines. Each paired word line includes two redundant word lines. The steering logic circuitry also includes border determination logic that determines whether the redundant word line is on a border between the redundant word lines and an end of the memory bank or the normal word lines. The steering logic circuitry further includes main word line steering logic that determines a neighboring main word line that a second neighboring redundant word line adjacent to the redundant word line is disposed in, and paired word line steering logic that determines a neighboring paired word line that the second neighboring redundant word line is disposed in.

Claims (18)

1. A method comprising:

receiving a redundant word line address associated with a redundant word line of a set of redundant word lines of a memory bank, wherein the memory bank comprises a set of normal word lines, wherein the set of redundant word lines comprises a plurality of main word lines, wherein data of a normal word line of the set of normal word lines is configured to be relocated to the redundant word line;

determining a first neighboring redundant word line adjacent to the redundant word line;

determining whether the redundant word line is a first redundant word line or a last redundant word line of the memory bank;

refreshing the first neighboring redundant word line in response to determining that the redundant word line is the first redundant word line or the last redundant word line of the memory bank;

determining whether the redundant word line is a first redundant word line of a main word line of the plurality of main word lines;

refreshing the first neighboring redundant word line and a last redundant word line of an immediately preceding main word line of the main word line in response to determining that the redundant word line is the first redundant word line of the main word line;

determining whether the redundant word line is a last redundant word line of the main word line; and

refreshing the first neighboring redundant word line and a first redundant word line of an immediately following main word line of the main word line in response to determining that the redundant word line is the last redundant word line of the main word line.

2. The method of claim 1 , comprising:

determining a complex neighboring redundant word line in the main word line; and

refreshing the complex neighboring redundant word line in response to determining the complex neighboring redundant word line.

3. The method of claim 2 , wherein determining the complex neighboring redundant word line occurs in response to determining that the redundant word line is not the first redundant word line of the main word line nor the last redundant word line of the main word line.

4. The method of claim 3 , wherein determining the complex neighboring redundant word line occurs in response to determining that the redundant word line is not the first redundant word line nor the last redundant word line of the memory bank.

5. The method of claim 2 , wherein the complex neighboring redundant word line immediately precedes the redundant word line when a least significant bit of the redundant word lines is 0.

6. The method of claim 2 , wherein the complex neighboring redundant word line immediately follows the redundant word line when a least significant bit of the redundant word lines is 1.

7. The method of claim 1 , wherein determining whether the redundant word line is the first redundant word line of the main word line occurs in response to determining that the redundant word line is not the first redundant word line nor the last redundant word line of the memory bank.

8. The method of claim 1 , wherein determining whether the redundant word line is the last redundant word line of the main word line occurs in response to determining that the redundant word line is not the first redundant word line nor the last redundant word line of the memory bank.

Assignments (5)
RELEASE OF SECURITY INTEREST Recorded Nov 12, 2019
From: JPMORGAN CHASE BANK, N.A., AS COLLATERAL AGENT
To: MICRON TECHNOLOGY, INC.; MICRON SEMICONDUCTOR PRODUCTS, INC.
Reel/Frame 051028/0001 →
RELEASE OF SECURITY INTEREST Recorded Oct 10, 2019
From: MORGAN STANLEY SENIOR FUNDING, INC., AS COLLATERAL AGENT
To: MICRON TECHNOLOGY, INC.
Reel/Frame 050716/0678 →
SECURITY INTEREST Recorded Jul 13, 2018
From: MICRON TECHNOLOGY, INC.; MICRON SEMICONDUCTOR PRODUCTS, INC.
To: JPMORGAN CHASE BANK, N.A., AS COLLATERAL AGENT
Reel/Frame 047540/0001 →
SUPPLEMENT NO. 7 TO PATENT SECURITY AGREEMENT Recorded Feb 6, 2018
From: MICRON TECHNOLOGY, INC.
To: MORGAN STANLEY SENIOR FUNDING, INC., AS COLLATERAL AGENT
Reel/Frame 045267/0833 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jan 8, 2018
From: LEE, JOOSANG
To: MICRON TECHNOLOGY, INC.
Reel/Frame 045015/0209 →