Components and systems for cleaning a tool for forming a semiconductor device, and related methods

1. A method of cleaning a tool for forming a semiconductor device, the method comprising:

heating a wafer comprising a first material comprising a ceramic material and a second material comprising a thermally insulative material having a different composition than the first material, the first material surrounding an outer circumference of the second material;

positioning the heated wafer on an electrostatic chuck of a tool for forming a semiconductor device such that deposits located proximate the heated wafer are heated to vaporize at least some of the deposits, positioning the heated wafer on the electrostatic chuck comprising contacting a major surface of the electrostatic chuck with the second material and with the first material; and

removing the vaporized deposits from the tool.

2. The method of claim 1 , wherein heating a wafer comprising a second material comprises heating the wafer with a second material having a lower thermal conductivity than the first material, the second material comprising silicon, borophosphosilicate glass, phosphosilicate glass, or borosilicate glass.

3. The method of claim 1 , wherein heating a wafer comprising a ceramic material comprises heating a wafer comprising a ceramic material including at least one of aluminum oxide, zirconium oxide, aluminum nitride, boron nitride, and boron carbide.

4. The method of claim 1 , wherein heating a wafer comprising a ceramic material comprises heating a wafer comprising a ceramic material exhibiting a specific heat capacity greater than about 400 J/kgK at about 20° C.

5. The method of claim 1 , wherein heating a wafer comprising a ceramic material comprises heating the wafer in a heating chamber prior to positioning the heated wafer on the electrostatic chuck of the tool.

6. The method of claim 1 , further comprising cooling the second material below about 0° C. after placing the heated wafer on the electrostatic chuck.

7. The method of claim 1 , wherein positioning the heated wafer on an electrostatic chuck of a tool for forming a semiconductor device such that deposits located proximate the heated wafer are heated to vaporize at least some of the deposits comprises heating one or more ammonium salts located proximate the heated wafer in a pocket region defined by a space between the heated wafer, an edge ring, and an insulative material proximate a periphery of the heated wafer.

8. The method of claim 1 , wherein heating a wafer comprises heating the ceramic material to a temperature greater than about 300° C.

9. The method of claim 1 , wherein positioning the heated wafer on an electrostatic chuck comprises transporting the heated wafer from a heating chamber to the tool at a pressure below about 1.0 mmHg.

10. The method of claim 1 , further comprising exposing the tool to a plasma while the heated wafer is on the electrostatic chuck.

11. The method of claim 1 , wherein positioning the heated wafer on an electrostatic chuck of a tool for forming a semiconductor device such that deposits located proximate the heated wafer are heated to vaporize at least some of the deposits comprises heating the deposits to at least about 300° C.

12. The method of claim 1 , wherein heating a wafer comprises heating the wafer external to the tool.

13. A system for cleaning a tool for forming a semiconductor device, the system comprising:

a wafer comprising a first material exhibiting a specific heat capacity greater than about 400 J/kgK at about 20° C. and a second material comprising a thermally insulative material, the first material surrounding an entire circumference of the second material and directly overlying and contacting an upper surface of the second material;

a heating chamber configured to heat the wafer; and

a tool comprising:

an electrostatic chuck configured to receive the wafer;

an edge ring disposed around a portion of the electrostatic chuck; and

a pocket region between the edge ring and the electrostatic chuck, the wafer elevated relative to the edge ring, the pocket region at least partially defined by a space between the wafer and the edge ring, wherein a lower surface of the second material directly contacts the electrostatic chuck, the first material not contacting the electrostatic chuck.

14. The system of claim 13 , wherein the second material comprises silicon dioxide or silicon nitride.

15. The system of claim 13 , wherein the first material comprises at least one of aluminum oxide, zirconium oxide, aluminum nitride, boron nitride, and boron carbide.

16. The system of claim 13 , wherein the first material is configured to overlie the pocket region.

17. The system of claim 13 , wherein the heating chamber comprises a plasma chamber configured to heat the first material without substantially heating a thermally insulative material surrounded by the first material.

18. The system of claim 13 , wherein the heating chamber comprises a heat lamp configured to heat the first material.

19. The system of claim 13 , further comprising a chiller configured to cool the electrostatic chuck when the wafer is disposed on the electrostatic chuck.

20. A method of forming a semiconductor device, the method comprising:

patterning a semiconductor wafer in a chamber of a tool;

removing the semiconductor wafer from the tool;

heating a cleaning wafer comprising a first material having a specific heat capacity greater than about 400 J/kg·K at about 20° C. and a second material comprising a thermally insulative material having a lower thermal conductivity than the first material, the first material surrounding only a circumference of the second material;

disposing the heated cleaning wafer on an electrostatic chuck of the tool, the first material proximate deposits located in a pocket region of the tool defined between the electrostatic chuck and an edge ring such that the deposits proximate the first material are heated, disposing the heated cleaning wafer on the electrostatic chuck comprising contacting a central portion of the electrostatic chuck with the second material and an outer portion of the electrostatic chuck with the first material; and

removing the deposits from the tool.

21. The method of claim 20 , wherein removing the deposits from the tool comprises exposing the chamber to a cleaning plasma comprising at least one of oxygen, argon, nitrogen, hydrogen, helium, chlorine, a fluorocarbon, and sulfur hexafluoride.

22. The method of claim 20 , wherein removing the deposits from the tool comprises heating the deposits while maintaining a pressure of the chamber below about 1.0 mmHg.

23. The method of claim 20 , further comprising cooling the electrostatic chuck simultaneously with heating the deposits proximate the first material.

24. A cleaning wafer for cleaning a tool used for fabricating a semiconductor device, the cleaning wafer comprising:

a thermally insulative material; and

a high specific heat capacity material selected from the group consisting of boron nitride, boron carbide, aluminum carbide, tungsten nitride, beryllium oxide, polyimide, graphite, and graphene surrounding at least a portion of the thermally insulative material and configured to be disposed on an electrostatic chuck of a tool used for fabricating a semiconductor device, the high specific heat capacity material configured to overlie a pocket defined between the electrostatic chuck and an edge ring of the tool.

25. The cleaning wafer of claim 24 , wherein the high specific heat capacity material comprises boron nitride, boron carbide, or a combination thereof.

26. The cleaning wafer of claim 24 , wherein the high specific heat capacity material comprises a ring-shape disposed around a circumference of the thermally insulative material.

27. The cleaning wafer of claim 24 , further comprising another material comprising silicon dioxide radially between the thermally insulative material and the high specific heat capacity material.