Pillar-last methods for forming semiconductor devices
Semiconductor devices having one or more vias filled with an electrically conductive material are disclosed herein. In one embodiment, a semiconductor device includes a semiconductor substrate having a first side, a plurality of circuit elements proximate to the first side, and a second side opposite the first side. A via can extend between the first and second sides, and a conductive material in the via can extend beyond the second side of the substrate to define a projecting portion of the conductive material. The semiconductor device can have a tall conductive pillar formed over the second side and surrounding the projecting portion of the conductive material, and a short conductive pad formed over the first side and electrically coupled to the conductive material in the via.
1. A semiconductor device comprising:
a substrate having a first side, a plurality of circuit elements proximate to the first side, and a second side opposite the first side;
a via extending through the substrate from the first side to the second side;
a conductive material in the via and having a projecting portion that extends beyond the second side of the substrate;
a conductive pad on the first side and electrically coupled to the conductive material, wherein the conductive pad has a height above the first side of the substrate of less than about 10 μm; and
a conductive pillar on the second side, at least partially surrounding the projecting portion of the conductive material, and electrically coupled to the conductive material, wherein the conductive pillar has a height above the second side of the substrate of between about 30-100 μm, wherein a volume of the conductive pillar is at least ten times greater than a volume of the projecting portion of the conductive material, and wherein the substrate does not include an insulating layer on the second side.
2. The semiconductor device of claim 1 wherein the height of the conductive pad is between about 0.1-5 μm.
3. The semiconductor device of claim 1 wherein the height of the conductive pillar is between about 35-60 μm.
4. The semiconductor device of claim 1 wherein the conductive pillar entirely surrounds the projecting portion of the conductive material.
5. The semiconductor device of claim 1 wherein the substrate directly contacts the conductive pillar.
6. The semiconductor device of claim 1 wherein the via is a first via, wherein the conductive material is a first conductive material, wherein the conductive pillar is a first conductive pillar, and further comprising:
a second via extending through the substrate from the first side to the second side;
a second conductive material in the second via and having a projecting portion that extends beyond the second side of the substrate; and
a second conductive pillar on the second side, at least partially surrounding the projecting portion of the second conductive material, and electrically coupled to the second conductive material,
wherein the projecting portion of the first conductive material has a first height above the second side of the substrate, wherein the projecting portion of the second conductive material has a second height above the second side of the substrate, and wherein the first height is different than the second height.
7. The semiconductor device of claim 1 wherein a surface of the conductive material is substantially coplanar with the first side of the substrate.
8. The semiconductor device of claim 1 wherein the conductive pillar has a diameter, and wherein the height of the conductive pillar above the second side of the substrate is greater than the diameter.
9. A semiconductor device comprising:
a substrate having a front side, a plurality of circuit elements at the front side, and a back side opposite the front side;
through-silicon vias (TSVs) in the substrate, wherein the TSVs include a conductive material extending through the substrate, and;
first conductive structures on the front side of the substrate and electrically coupled to the TSVs, wherein the first conductive structures have a height above the front side of the substrate of less than about 10 μm; and
second conductive structures on the back side of the substrate and electrically coupled to the TSVs, wherein the second conductive structures have a height above the back side of the substrate of between about 30-100 μm, wherein the second conductive structures each have a volume that is at least ten times greater than a volume of the corresponding one of the projecting portions.
10. The semiconductor device of claim 9 wherein the projecting portions of the TSVs each have a height above the back side of the substrate of less than about 5 μm.
11. The semiconductor device of claim 9 wherein the projecting portions of the TSVs are not coplanar.
12. The semiconductor device of claim 9 wherein the first conductive structures are under-bump metallization (UBM) structures.
13. The semiconductor device of claim 9 wherein the first conductive structures comprise a seed layer.
14. The semiconductor device of claim 9 wherein the substrate does not include an insulating layer over the back side.