IP Library Granted Patent US 10,410,721
Granted Patent B2
US 10,410,721 · App. 15/821,240 · Granted Sep 10, 2019

Pulsed integrator and memory techniques

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Quick Facts
Patent No.
US 10,410,721
App. No.
15/821,240
Granted
Sep 10, 2019
Kind
B2
Abstract

Methods, systems, and devices for a pulsed integrator and memory techniques are described. A first device may facilitate discharging a memory cell using at least one current pulse until a voltage associated with the memory cell reaches a reference voltage. The discharge time of the memory cell may be determined based at least in part on a duration of at least one current pulse. In some examples, a state of the memory cell may be determined based at least in part on a discharge time.

Claims (28)

1. An electronic memory apparatus, comprising:

a memory cell in electronic communication with a select line, the memory cell configured to store a plurality of logic states;

a current sink in electronic communication with the select line, the current sink configured to discharge the memory cell using at least one current pulse until a voltage associated with the memory cell decreases to a reference voltage;

a feedback component in electronic communication with the current sink, the feedback component configured to compare the voltage of the memory cell to the reference voltage; and

a sense component configured to determine a state of the memory cell based at least in part on a discharge time.

2. The electronic memory apparatus of claim 1 , further comprising:

a timing component, the timing component configured to measure the discharge time as an amount of time that the current sink is active.

3. The electronic memory apparatus of claim 2 , wherein the timing component is configured to measure the discharge time based at least in part on a clock frequency.

4. The electronic memory apparatus of claim 2 , wherein the timing component is configured to count a number of current pulses included in the at least one current pulse to determine a pulse count and measure the discharge time based at least in part on the pulse count.

5. The electronic memory apparatus of claim 1 , wherein the current sink comprises a current mirror.

6. The electronic memory apparatus of claim 1 , wherein the at least one current pulse is a plurality of current pulses, wherein each current pulse in the plurality of current pulses is of an equal duration.

7. The electronic memory apparatus of claim 1 , wherein the feedback component is configured to activate the current sink based at least in part on the voltage associated with the memory cell.

8. The electronic memory apparatus of claim 1 , wherein the feedback component is configured to provide a unidirectional feedback path from the feedback component to the current sink based at least in part on comparing the voltage of the memory cell to the reference voltage.

9. The electronic memory apparatus of claim 8 , wherein the feedback component is configured to control the current sink based at least in part on the unidirectional feedback path.

10. The electronic memory apparatus of claim 1 , further comprising:

an oscillator configured to activate the current sink, wherein each activation of the current sink results in a current pulse of an equal duration.

11. An electronic memory apparatus, comprising:

a memory cell in electronic communication with a select line;

a current sink in electronic communication with the select line;

a feedback component in electronic communication with the current sink;

a controller in electronic communication with the memory cell, wherein the controller is operable to:

discharge the memory cell using at least one current pulse until a voltage associated with the memory cell decreases to a reference voltage;

determine a discharge time based at least in part on a duration of the at least one current pulse; and

determine a state of the memory cell based at least in part on the discharge time.

12. The electronic memory apparatus of claim 11 , wherein the controller is operable to:

determine a pulse count based at least in part on a number of current pulses included in the at least one current pulse.

13. The electronic memory apparatus of claim 12 , wherein the controller is operable to:

determine the state of the memory cell based at least in part on comparing the pulse count to a reference count.

Assignments (5)
RELEASE OF SECURITY INTEREST Recorded Nov 12, 2019
From: JPMORGAN CHASE BANK, N.A., AS COLLATERAL AGENT
To: MICRON TECHNOLOGY, INC.; MICRON SEMICONDUCTOR PRODUCTS, INC.
Reel/Frame 051028/0001 →
RELEASE OF SECURITY INTEREST Recorded Oct 10, 2019
From: MORGAN STANLEY SENIOR FUNDING, INC., AS COLLATERAL AGENT
To: MICRON TECHNOLOGY, INC.
Reel/Frame 050716/0678 →
SECURITY INTEREST Recorded Jul 13, 2018
From: MICRON TECHNOLOGY, INC.; MICRON SEMICONDUCTOR PRODUCTS, INC.
To: JPMORGAN CHASE BANK, N.A., AS COLLATERAL AGENT
Reel/Frame 047540/0001 →
SUPPLEMENT NO. 7 TO PATENT SECURITY AGREEMENT Recorded Feb 6, 2018
From: MICRON TECHNOLOGY, INC.
To: MORGAN STANLEY SENIOR FUNDING, INC., AS COLLATERAL AGENT
Reel/Frame 045267/0833 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Dec 20, 2017
From: CASTRO, HERNAN A.; HIRST, JEREMY M.
To: MICRON TECHNOLOGY, INC.
Reel/Frame 044451/0674 →