Transistors having dielectric material containing non-hydrogenous ions and methods of their fabrication

1. A transistor, comprising:

a first source/drain region in a semiconductor;

a second source/drain region in the semiconductor;

a dielectric material adjacent to the semiconductor, the dielectric material containing non-hydrogenous ions; and

a control gate adjacent to the dielectric material;

wherein the non-hydrogenous ions have a drift velocity that is greater than six orders of magnitude less than a drift velocity of hydrogen ions when each of the drift velocities is determined in silicon dioxide at an applied electric field of 1000V/cm and at a temperature of 300K.

2. The transistor of claim 1 , wherein the dielectric material is over the semiconductor and extending between the first source/drain region and the second source/drain region, and wherein the control gate is over the dielectric material.

3. The transistor of claim 1 , wherein the non-hydrogenous ions have a drift velocity that is greater than six orders of magnitude less than a drift velocity of hydrogen ions and less than or equal to eight orders of magnitude less than the drift velocity of hydrogen ions when each of the drift velocities is determined in silicon dioxide at an applied electric field of 1000V/cm and at a temperature of 300K.

4. The transistor of claim 1 , wherein the dielectric material has a dielectric constant greater than or equal to 3.9.

5. The transistor of claim 1 , wherein the dielectric material comprises silicon dioxide.

6. The transistor of claim 1 , wherein the non-hydrogenous ions are selected from a group consisting of calcium anions and magnesium anions.

7. A method for fabricating a transistor, the method comprising:

forming a dielectric material adjacent to a semiconductor;

introducing non-hydrogenous ions into the dielectric material; and

forming a control gate adjacent to the dielectric material;

wherein introducing the non-hydrogenous ions is performed prior to or during formation of the dielectric material.

8. A method for fabricating a transistor, the method comprising:

forming a dielectric material adjacent to a semiconductor;

introducing non-hydrogenous ions into the dielectric material; and

forming a control gate adjacent to the dielectric material;

wherein introducing the non-hydrogenous ions comprises immersing the semiconductor into an alkali solution.

9. The method of claim 8 , wherein the semiconductor is immersed in a solution of one of Ca(OH) 2 or MgCl 2 +Mg(OH) 2 dissolved in deionized water.

10. A method for fabricating a transistor, the method comprising:

forming a dielectric material adjacent to a semiconductor;

introducing non-hydrogenous ions into the dielectric material, wherein the non-hydrogenous ions have an ionic charge number greater than one; and

forming a control gate adjacent to the dielectric material;

wherein introducing the non-hydrogenous ions into the dielectric material comprises introducing non-hydrogenous ions having a drift velocity that is greater than six orders of magnitude less than a drift velocity of hydrogen ions when each of the drift velocities is determined in silicon dioxide at an applied electric field of 1000V/cm and at a temperature of 300K.

11. A method for fabricating a transistor, the method comprising:

forming a dielectric material adjacent to a semiconductor;

introducing non-hydrogenous ions into the dielectric material; and

forming a control gate adjacent to the dielectric material;

wherein introducing the non-hydrogenous ions is performed by contacting the dielectric material with an alkali solution.

12. The method of claim 7 , wherein introducing the non-hydrogenous ions comprises introducing non-hydrogenous ions selected from a group consisting of cations and anions.

13. The method of claim 10 , wherein introducing the non-hydrogenous ions into the dielectric material is performed after forming the dielectric material.

14. The method of claim 10 , further comprising wherein the drift velocity of the non-hydrogenous ions is less than or equal to eight orders of magnitude less than the drift velocity of hydrogen ions when each of the drift velocities is determined in silicon dioxide at an applied electric field of 1000V/cm and at a temperature of 300K.

15. The method of claim 10 , wherein introducing the non-hydrogenous ions into the dielectric material comprises introducing non-hydrogenous anions into the dielectric material.

16. The method of claim 10 , wherein forming the dielectric material comprises forming a dielectric oxide.

17. The transistor of claim 1 , wherein the transistor is a non-volatile memory cell of a memory device.

18. The transistor of claim 1 , wherein each non-hydrogenous ion of the non-hydrogenous ions contained in the dielectric material has a drift velocity that is greater than six orders of magnitude less than a drift velocity of hydrogen ions when each of the drift velocities is determined in silicon dioxide at an applied electric field of 1000V/cm and at a temperature of 300K.

19. The method of claim 10 , wherein introducing the non-hydrogenous ions into the dielectric material consists essentially of introducing non-hydrogenous ions having a drift velocity that is greater than six orders of magnitude less than a drift velocity of hydrogen ions when each of the drift velocities is determined in silicon dioxide at an applied electric field of 1000V/cm and at a temperature of 300K.

20. The method of claim 10 , wherein introducing the non-hydrogenous ions into the dielectric material consists essentially of introducing non-hydrogenous ions having a drift velocity that is greater than six orders of magnitude less than a drift velocity of hydrogen ions and less than or equal to eight orders of magnitude less than the drift velocity of hydrogen ions when each of the drift velocities is determined in silicon dioxide at an applied electric field of 1000V/cm and at a temperature of 300K.