Memory arrays and methods of forming memory cells
View Patent ↗Some embodiments include methods of forming memory cells. A series of rails is formed to include bottom electrode contact material. Sacrificial material is patterned into a series of lines that cross the series of rails. A pattern of the series of lines is transferred into the bottom electrode contact material. At least a portion of the sacrificial material is subsequently replaced with top electrode material. Some embodiments include memory arrays that contain a second series of electrically conductive lines crossing a first series of electrically conductive lines. Memory cells are at locations where the electrically conductive lines of the second series overlap the electrically conductive lines of the first series. First and second memory cell materials are within the memory cell locations. The first memory cell material is configured as planar sheets and the second memory cell material is configured as upwardly-opening containers.
1. A memory array, comprising:
a first series of electrically conductive lines extending along a first direction;
pillars over the first series of electrically conductive lines; the pillars being capped with bottom electrode contact material and being directly between the electrically conductive lines of the first series and memory cell locations;
a memory cell material over the pillars and within the memory cell locations, the memory cell material extending continuously across multiple of the pillars along a second direction, the memory cell material including a plurality of upwardly-opening containers that extend linearly along the second direction; and
a second series of electrically conductive lines extending along the second direction that crosses the first direction, the electrically conductive lines of the second series being within the containers and comprising top electrode material, the memory cell locations being directly between the electrically conductive lines of the first and second series, and being in regions where the electrically conductive lines of the second series overlap the electrically conductive lines of the first series.
2. The memory array of claim 1 , wherein the electrically conductive lines of the second series comprise one or more of platinum, copper and silver.
3. The memory array of claim 1 further comprising dielectric lines between the electrically conductive lines of the second series; and wherein the dielectric lines comprise one or both of silicon nitride and silicon carbide.
4. The memory array of claim 3 wherein the dielectric lines comprise air gaps that consume at least about 10% of a volume of the dielectric lines.
5. A memory array, comprising:
a first series of electrically conductive lines extending along a first direction;
pillars over the first series of electrically conductive lines, the pillars being capped with bottom electrode contact material and being directly between the electrically conductive lines of the first series and memory cell locations;
a first memory cell material over the pillars and within the memory cell locations, the first memory cell material being a planar sheet extending along a second direction across multiple of the pillars;
a second memory cell material over the first memory cell material, the second memory cell material being configured as a plurality of upwardly-opening containers that extend linearly along the second direction; and
a second series of electrically conductive lines within the containers; the second series of electrically conductive lines comprising top electrode material.
6. The memory array of claim 5 wherein the first memory cell material comprises one or more of aluminum, antimony, barium, calcium, cesium, germanium, hafnium, iron, lanthanum, lead, manganese, oxygen, praseodymium, ruthenium, samarium, selenium, silicon, strontium, sulfur, tellurium, titanium, yttrium and zirconium.
7. The memory array of claim 5 wherein the second memory cell material comprise an ion source region comprising one or more of copper, silver and tellurium.
8. The memory array of claim 5 wherein the pillars comprise at least portions of select devices.
9. A memory array, comprising:
a first series of electrically conductive lines extending along a first direction;
pillars over the first series of electrically conductive lines, the pillars being capped with bottom electrode contact material and being directly between the electrically conductive lines of the first series and memory cell locations;
one or more memory cell materials over the pillars and within the memory cell locations, the memory cell material having a planar bottom surface extending along a second direction across multiple of the pillars;
a series of dielectric lines extending along the second direction that crosses the first direction and being disposed between and contacting the pillars; and
a second series of electrically conductive lines extending along the second direction, individual electrical conductive lines of the second series of electrically conductive lines alternating with individual dielectric lines of the series of dielectric lines, the memory cell locations being directly between the electrically conductive lines of the first and second series, and being in regions where the electrically conductive lines of the second series overlap the electrically conductive lines of the first series.
10. The memory array of claim 9 wherein the dielectric lines are disposed between memory cell locations.
11. The memory array of claim 9 wherein the electrically conductive lines of the second series comprise one or more of platinum, copper and silver.
12. The memory array of claim 9 wherein the one or more memory cell materials comprise a first memory cell material and a second memory cell material over the first memory cell material.
13. The memory array of claim 12 wherein the second memory cell material is configured as a plurality of upwardly-opening containers.
14. The memory array of claim 12 wherein the first memory cell material comprises an oxide containing one or more of aluminum, antimony, barium, calcium, cesium, germanium, hafnium, iron, lanthanum, lead, manganese, praseodymium, ruthenium, samarium, selenium, silicon, strontium, sulfur, tellurium, titanium, yttrium and zirconium.
15. The memory array of claim 12 wherein the first memory cell material comprises one or more multivalent metal oxide comprising one or more elements selected from the group consisting of barium, ruthenium, strontium, titanium, calcium, manganese, praseodymium, lanthanum and samarium.
16. The memory array of claim 15 wherein the first memory cell material comprises calcium manganese oxide doped with one or more of Pr, La, Sr and Sm.
17. The memory array of claim 12 wherein the first memory cell material comprises a material selected from the group consisting of a chalcogenide-type material and an ion source material.