Hydrosilylation in semiconductor processing

1. A method for forming a semiconductor device, comprising:

forming a silicon-hydrogen (Si—H) terminated surface on a silicon structure that includes patterned features by exposing the silicon structure to a hydrogen fluoride (HF) containing solution;

removing the HF containing solution via a deionized (DI) water rinse;

forming a solvent on the Si—H terminated surface on the silicon structure; and

performing a surface modification via hydrosilylation by exposing the Si—H terminated surface to an alkene and/or an alkyne.

2. The method of claim 1 , wherein performing the surface modification prevents collapse of the patterned features of the silicon structure.

3. The method of claim 1 , wherein performing the surface modification reduces stiction between the patterned features of the silicon structure.

4. The method of claim 1 , further including forming the solvent on the Si—H terminated surface on the silicon structure prior to performing the surface modification.

5. The method of claim 1 , wherein forming the solvent on the Si—H terminated surface on the silicon structure prevents oxidation of the surface of the silicon structure.

6. The method of claim 1 , wherein exposing the Si—H terminated surface to an alkene and/or an alkyne displaces solvent on the Si—H terminated surface.

7. The method of claim 1 , further including removing portions of the alkene and/or the alkyne via evaporation after performing the surface modification.

8. The method of claim 1 , wherein further including removing portions of the alkene and/or the alkyne via a plasma strip process after performing the surface modification.

9. The method of claim 1 , performing the surface modification includes heating the silicon structure to between approximately 100° C. and 300° C.

10. A method for forming a semiconductor device, comprising:

forming features on a silicon structure;

performing a wet clean operation on the silicon structure to remove materials that remain on the silicon structure after forming the features on the silicon structure, wherein the wet clean operation includes exposing the silicon structure to a hydrogen fluoride (HF) containing solution; and

performing a surface modification of the silicon structure via hydrosilylation by exposing the silicon structure to an alkene and/or an alkyne, wherein the alkene and/or alkyne displaces a solvent on the silicon structure.

11. The method of claim 10 , further including exposing the silicon structure to the solvent in response to performing the wet clean operation.

12. The method of claim 11 , further including transferring the silicon structure from a first chamber to a second chamber in response to exposing the silicon structure to the solvent.

13. The method of claim 10 , wherein forming features on the silicon structure include forming features with an aspect ratio greater than 20.

14. The method of claim 10 , wherein exposing the silicon structure to the hydrogen fluoride (HF) containing solution forms a silicon-hydrogen (Si—H) terminated surface on the silicon structure.

15. The method of claim 10 , further including removing the hydrogen fluoride (HF) containing solution via deionized water.

16. The method of claim 15 , further including exchanging the deionized water with solvent.

17. A method for forming a semiconductor device, comprising:

performing a surface modification on a Si—H terminated surface of a silicon structure via hydrosilylation by reacting an alkene and/or an alkyne with the silicon structure, wherein performing the surface modification includes removing an HF containing solution from the Si—H terminated surface via a deionized (DI) water rinse and forming a solvent on the Si—H terminated surface on the silicon structure, wherein reacting the alkene and/or the alkyne with the silicon structure includes reacting a compound selected from the group comprising:

a vinylbenzene;

an ethynylbenzene;

a vinyl and a silyl;

an ethynyl and a silyl; and

a fluorocarbon and a vinyl.

18. The method of claim 17 , further including reacting the alkene having between 5 and 20 carbon atom with the silicon structure.

19. The method of claim 17 , further including reacting the alkyne having between 5 and 15 carbon atom with the silicon structure.

20. A semiconductor processing system, comprising:

a first chamber configured to perform a wet clean operation on a silicon structure, wherein the wet clean operation removes materials that remain on the silicon structure after forming patterned features on the silicon structure and removes an HF containing solution from the silicon structure via a deionized (DI) water rinse and forms a solvent on the Si—H terminated surface on the silicon structure; and

a second chamber configured to perform a surface modification of the silicon structure via hydrosilylation by exposing the silicon structure to an alkene and/or an alkyne.

21. The system of claim 20 , wherein the second chamber is configured to heat the silicon structure to a temperature of 100° C. to 300° C.

22. The system of claim 20 , wherein the first chamber is configured to apply the solvent to the silicon structure after the wet clean operation.

23. The system of claim 20 , wherein the second chamber is configured to increase pressure in the second chamber during the surface modification.

24. The system of claim 20 , wherein the second chamber is configured to remove the alkene and/or the alkyne in response to completing the surface modification by reducing the pressure in the second chamber.

25. The system of claim 20 , wherein the silicon structure is protected by the solvent and moved from the first chamber to the second chamber in response to completing the wet clean operation.