Memory arrays comprising ferroelectric capacitors

1. A memory array, comprising:

rows of fins; each fin having a first pedestal, a second pedestal and a trough between the first pedestal and second pedestal; first source/drain regions being within the first pedestal, second source/drain regions being within the second pedestal, and channel regions being along the troughs between the first pedestal and second pedestal;

only a single composition of material is directly between the first and second pedestals;

digit lines electrically coupled with the first source/drain regions;

ferroelectric capacitors electrically coupled with the second source/drain regions;

wordlines along the rows of fins and overlapping the channel regions; and

conductive shielding adjacent the wordlines along the rows of fins.

2. The memory array of claim 1 wherein each row of fins has a first side and a second side; the wordlines gating each row from both of the first and second sides.

3. The memory array of claim 2 wherein each of the wordlines comprise a pair of wordline components, with one component of said pair extending along the first side of a row of fins and the other component of said pair extending along the second side of the row of fins; and wherein the wordline components comprise metal.

4. The memory array of claim 1 wherein the wordlines and the conductive shielding comprise a same composition as one another.

5. The memory array of claim 1 wherein the wordlines and the conductive shielding comprise different compositions relative to one another.

6. The memory array of claim 5 wherein the wordlines comprise metal and the conductive shielding corresponds to lines consisting of conductively-doped silicon.

7. The memory array of claim 1 wherein the fins have bases along n-type doped semiconductor material, and comprising damage regions formed along an upper surface of the n-type doped semiconductor material between bases of adjacent fins along the rows of fins.

8. The memory array of claim 7 wherein the n-type doped semiconductor material is above and directly against p-type doped semiconductor material.

9. The memory array of claim 1 wherein one of the first and second source/drain regions comprises dopant in one of the first and second pedestals that extends elevationally below dopant in the other one of the first and second pedestals.

10. The memory array of claim 1 wherein one of the first and second source/drain regions comprises dopant in one of the first and second pedestals that overlaps with the wordlines; and dopant level in the other one of the first and second pedestals is elevationally above the wordlines.

11. The memory array of claim 1 wherein at least one of the first and second source/drain regions comprises dopant in one of the first and second pedestals that is elevationally below the trough.

12. The memory array of claim 1 wherein the wordlines extend parallel along the rows of fins.

13. The memory array of claim 1 wherein the conductive shielding comprises separate discrete structures, at least two conductive shielding structures between two adjacent wordlines.

14. The memory array of claim 1 wherein the conductive shielding comprises separate discrete structures, at least two conductive shielding structures adjacent a pair of sides of one wordline.

15. An assembly, comprising:

rows of fins; each fin having a first pedestal, a second pedestal and a trough between the first pedestal and second pedestal; first heavily-doped source/drain regions being within the first pedestal, second heavily-doped source/drain regions being within the second pedestal, and channel regions being along the troughs between the first pedestal and second pedestal;

ferroelectric capacitors electrically coupled with the second source/drain regions;

conductive wiring along the rows of fins and overlapping the channel regions; the second heavily-doped source/drain regions vertically overlapping the conductive wiring, and the first heavily-doped source/drain regions not vertically overlapping the conductive wiring; and

conductive isolation lines under the conductive wiring along the rows of fins.

16. The assembly of claim 15 wherein each row of fins has a first side and a second side; and wherein the conductive wiring gates each row from both of the first and second sides.

17. The assembly of claim 15 wherein the second heavily-doped source/drain regions extend vertically across the conductive wiring.

18. The assembly of claim 15 wherein the conductive wiring comprises metal.

19. The assembly of claim 18 wherein the conductive isolation lines comprise silicon.

20. The assembly of claim 18 wherein the conductive isolation lines consist of doped silicon.

21. An assembly, comprising:

rows of fins; each fin having a first pedestal, a second pedestal and a trough between the first pedestal and second pedestal; first source/drain regions being within the first pedestal, second source/drain regions being within the second pedestal, and channel regions being along the troughs between the first pedestal and second pedestal; the fins extending upwardly from an n-type doped semiconductor material; gettering regions being along segments of the n-type doped semiconductor material between the fins;

ferroelectric capacitors electrically coupled with the second source/drain regions; and

conductive wiring along the rows of fins and overlapping the channel regions.

22. The assembly of claim 21 wherein each row of fins has a first side and a second side; and wherein the conductive wiring gates each row from both of the first and second sides.

23. The assembly of claim 21 comprising silicon-containing conductive isolation lines under the conductive wiring along the rows of fins.