IP Library Granted Patent US 10,121,521
Granted Patent B2
US 10,121,521 · App. 15/837,036 · Granted Nov 6, 2018

Read threshold voltage selection

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Quick Facts
Patent No.
US 10,121,521
App. No.
15/837,036
Granted
Nov 6, 2018
Kind
B2
Abstract

Apparatuses and methods for read threshold voltage selection are provided. One example method can include setting a first soft read threshold voltage and a second soft read threshold voltage based on a difference between a first number of memory cells that are read as being programmed to a first state when read using a first threshold voltage and a second number of memory that are read as being programmed to the first state when read using another threshold voltage.

Claims (14)

1. A method for read threshold voltage selection, comprising:

setting a first soft read threshold voltage based on mutual information of two adjacent threshold voltage distributions, wherein:

the two adjacent threshold voltage distributions include a first threshold voltage distribution including memory cells programmed to a first state and a second threshold voltage distribution including memory cells programmed to a second state; and

the method includes setting the first soft read threshold voltage such that a read operation using the first soft read threshold voltage results in an amount of mutual information that is at least 99.5% of an achievable mutual information value for the two adjacent threshold voltage distributions.

2. The method of claim 1 , wherein the method includes setting the first soft read threshold voltage such that a read operation using the first soft read threshold voltage results in an amount of mutual information that is at least a particular percentage of an achievable peak mutual information value for the two adjacent threshold voltage distributions.

3. The method of claim 1 , the method includes setting the first soft read threshold voltage as an offset from a hard read threshold voltage for the two adjacent threshold voltage distributions.

4. The method of claim 1 , the method includes setting a second soft read threshold voltage as an offset from a hard read threshold voltage for the two adjacent threshold voltage distributions, wherein the offset from the hard read threshold voltage is equal for the first soft read threshold voltage and the second soft read threshold voltage.

5. A method for read threshold voltage selection, comprising:

setting a first soft read threshold voltage based on mutual information of two adjacent threshold voltage distributions, wherein:

the two adjacent threshold voltage distributions include a first threshold voltage distribution including memory cells programmed to a first state and a second threshold voltage distribution including memory cells programmed to a second state; and

the method includes setting the first soft read threshold voltage such that a read operation using the first soft read threshold voltage results in an amount of mutual information that is at least 99% of an achievable peak mutual information value for the two adjacent threshold voltage distributions.

6. The method of claim 5 , wherein the method includes setting the first soft read threshold voltage such that a read operation using the first soft read threshold voltage results in an amount of mutual information that is at least a particular percentage of an achievable peak mutual information value for the two adjacent threshold voltage distributions.

7. The method of claim 5 , wherein the method includes setting the first soft read threshold voltage as an offset from a hard read threshold voltage for the two adjacent threshold voltage distributions.

8. The method of claim 5 , wherein the method includes setting a second soft read threshold voltage as an offset from a hard read threshold voltage for the two adjacent threshold voltage distributions, wherein the offset from the hard read threshold voltage is equal for the first soft read threshold voltage and the second soft read threshold voltage.

Assignments (5)
RELEASE OF SECURITY INTEREST Recorded Nov 12, 2019
From: JPMORGAN CHASE BANK, N.A., AS COLLATERAL AGENT
To: MICRON TECHNOLOGY, INC.; MICRON SEMICONDUCTOR PRODUCTS, INC.
Reel/Frame 051028/0001 →
RELEASE OF SECURITY INTEREST Recorded Oct 10, 2019
From: MORGAN STANLEY SENIOR FUNDING, INC., AS COLLATERAL AGENT
To: MICRON TECHNOLOGY, INC.
Reel/Frame 050716/0678 →
SECURITY INTEREST Recorded Jul 13, 2018
From: MICRON TECHNOLOGY, INC.; MICRON SEMICONDUCTOR PRODUCTS, INC.
To: JPMORGAN CHASE BANK, N.A., AS COLLATERAL AGENT
Reel/Frame 047540/0001 →
SUPPLEMENT NO. 7 TO PATENT SECURITY AGREEMENT Recorded Feb 6, 2018
From: MICRON TECHNOLOGY, INC.
To: MORGAN STANLEY SENIOR FUNDING, INC., AS COLLATERAL AGENT
Reel/Frame 045267/0833 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Dec 11, 2017
From: VARANASI, CHANDRA C.
To: MICRON TECHNOLOGY, INC.
Reel/Frame 044348/0494 →