Capacitor having bottom electrode comprising TiN
Disclosed herein is an apparatus that includes a bottom electrode, a top electrode, and a dielectric film disposed between the bottom electrode and the top electrode. The bottom electrode includes TiN having more (111) crystal orientation than (200) crystal orientation.
1. An apparatus comprising a capacitor, the capacitor comprising:
a bottom electrode comprising TiN having (111) crystal orientation and (200) crystal orientation;
a top electrode; and
a dielectric film disposed between the bottom electrode and the top electrode,
wherein the TiN in the bottom electrode has more (111) crystal orientation than (200) crystal orientation.
2. The apparatus of claim 1 , wherein the TiN includes the (111) crystal orientation more than 7 times the (200) crystal orientation.
3. The apparatus of claim 1 , wherein the bottom electrode has a thickness between 45 Å to 140 Å.
4. The apparatus of claim 3 , wherein the bottom electrode has a thickness between 45 Å to 70 Å.
5. The apparatus of claim 1 , wherein the bottom electrode has a height between 1400 nm to 1600 nm.
6. The apparatus of claim 1 , wherein the bottom electrode has a cylindrical shape.
7. The apparatus of claim 6 , wherein the capacitor is included in a plurality of capacitors, and the plurality of capacitors are regularly arranged in which an arrangement pitch is 50 nm to 70 nm.
8. The apparatus of claim 1 , wherein the top electrode comprises TiN.
9. The apparatus of claim 8 , wherein the top electrode has a different crystal orientation from the bottom electrode.
10. An apparatus comprising:
a bit line;
a cell capacitor;
a cell transistor coupled between the bit line and the cell capacitor; and
a word line coupled to a control electrode of the cell transistor,
wherein the cell capacitor comprises:
a bottom electrode coupled to the cell transistor;
a top electrode; and
a dielectric film provided between the bottom electrode and the top electrode,
wherein the bottom electrode comprises TiN having (111) crystal orientation and (200) crystal orientation, and wherein the TiN has more (111) crystal orientation than (200) crystal orientation, and
wherein the bottom electrode has a thickness between 45 Å to 140 Å.
11. The apparatus of claim 10 , wherein the bottom electrode has a thickness between 45 Å to 70 Å.
12. The apparatus of claim 10 , wherein the bottom electrode has a height between 1400 nm to 1600 nm.
13. The apparatus of claim 10 , wherein the cell capacitor is included in a plurality of the cell capacitors, and the plurality of the cell capacitors are regularly arranged in which an arrangement pitch is 50 nm to 70 nm.