Accessing memory cells in parallel in a cross-point array

1. A method, comprising:

accessing a first memory cell of an array of memory cells coupled with a first selected column and a first selected row based at least in part on applying a first access pulse;

applying, during a first threshold duration, a first threshold pulse between the first selected column and the first selected row, wherein the first memory cell is accessed during the first threshold duration;

pre-charging the first memory cell by applying a first inhibit pulse between the first selected column and the first selected row before applying the first threshold pulse;

accessing, in parallel with accessing the first memory cell, a second memory cell of the array of memory cells coupled with a second selected column and a second selected row based at least in part on applying a second access pulse;

applying, during a second threshold duration, a second threshold pulse between the second selected column and the second selected row, wherein the second memory cell is accessed during the second threshold duration; and

pre-charging the second memory cell by applying a second inhibit pulse between the second selected column and the second selected row before applying the second threshold pulse, wherein a magnitude of the first inhibit pulse is different than a magnitude of the second inhibit pulse.

2. The method of claim 1 , wherein a magnitude of at least one of the first access pulse or the second access pulse is lower than a magnitude of least one of the first threshold pulse or the second threshold pulse.

3. The method of claim 1 , further comprising:

applying, after the first threshold duration and based at least in part on applying the first threshold pulse, an additional threshold pulse to the first memory cell, the additional threshold pulse having a lower magnitude than the first threshold pulse.

4. A method, comprising:

accessing a first memory cell coupled with a first selected column and a first selected row based at least in part on applying a first access pulse;

accessing, in parallel with accessing the first memory cell, a second memory cell coupled with a second selected column and a second selected row based at least in part on applying a second access pulse;

applying, during a first threshold duration, a first threshold pulse between the first selected column and the first selected row, wherein the first memory cell is accessed during the first threshold duration;

applying, during a second threshold duration, a second threshold pulse between the second selected column and the second selected row, wherein the second memory cell is accessed during the second threshold duration;

applying, after the first threshold duration and based at least in part on applying the first threshold pulse, an additional threshold pulse to the first memory cell, the additional threshold pulse having a lower magnitude than the first threshold pulse;

releasing the first memory cell from a hold condition based at least in part on removing the additional threshold pulse applied to the first memory cell; and

refreshing the first memory cell by applying a refresh pulse to the first memory cell after releasing the first memory cell from the hold condition.

5. The method of claim 4 , further comprising:

applying a second hold voltage to the second memory cell during the second threshold duration based at least in part on applying the second threshold pulse; and

releasing the second memory cell from the hold condition based at least in part on removing the second hold voltage applied to the second memory cell.

6. The method of claim 1 , wherein accessing the first memory cell comprises applying the first access pulse between the first selected column and the first selected row and accessing the second memory cell comprises applying the second access pulse between the second selected column and the second selected row.

7. The method of claim 1 , wherein the first memory cell and the second memory cell are accessed concurrently.

8. The method of claim 7 , wherein the first memory cell and the second memory cell are accessed simultaneously.

9. The method of claim 1 , further comprising:

adjusting a current flowing across the first memory cell and the second memory cell based at least in part on removing the first threshold pulse during the first threshold duration and removing the second threshold pulse during the second threshold duration.

10. The method of claim 1 , wherein the first memory cell and the second memory cell are disposed within a cross-point memory array, and the first memory cell, or the second memory cell, or both comprise a chalcogenide material.

11. The method of claim 1 , further comprising:

inhibiting a plurality of memory cells of a memory array based at least in part on applying the first inhibit pulse to each of the plurality of memory cells.

12. The method of claim 4 , further comprising:

inhibiting a plurality of memory cells of a memory array based at least in part on applying a first inhibit pulse to each of the plurality of memory cells.

13. The method of claim 4 , wherein a magnitude of at least one of the first access pulse or the second access pulse is lower than a magnitude of least one of the first threshold pulse or the second threshold pulse.

14. The method of claim 4 , wherein the first memory cell and the second memory cell are accessed concurrently.

15. The method of claim 4 , wherein the first memory cell and the second memory cell are accessed simultaneously.

16. The method of claim 4 , wherein the first memory cell and the second memory cell are disposed within a cross-point memory array, and the first memory cell, or the second memory cell, or both comprise a chalcogenide material.