Apparatuses and methods for charging a global access line prior to accessing a memory
Apparatuses and methods for charging a global access line prior to accessing a memory are described. An example apparatus may include a memory array of a memory. A plurality of global access lines may be associated with the memory array. The global access line may be charged to a ready-access voltage before any access command has been received by the memory. The global access line may be maintained at the ready-access voltage during memory access operations until the receipt of a post-access command. The post-access command may reset the global access line to an inactive voltage.
1. An apparatus comprising:
a memory array including signal lines;
voltage circuitry configured to charge at least one signal line of the signal lines to a ready-access voltage before an access command is received to access the memory array; and
a control logic circuit configured to control the voltage circuitry to charge the at least one signal line of the memory array responsive to receipt of a pre-access command, the control logic circuit configured to control the voltage circuitry based partly on a temperature condition of the apparatus.
2. The apparatus of claim 1 , wherein the signal lines comprises access lines and data lines.
3. The apparatus of claim 1 , wherein the apparatus operates within an automobile.
4. The apparatus of claim 3 , wherein temperature condition of the apparatus corresponds to a temperature range between 125 and −40 degrees Celsius.
5. The apparatus of claim 3 , wherein temperature condition of the apparatus corresponds to a temperature range between 85 and −40 degrees Celsius.
6. The apparatus of claim 1 , wherein the control logic circuit is configured to provide control signals for voltage value determination of the apparatus based on temperature evaluation feedback resulting from a temperature measurement of the apparatus.
7. The apparatus of claim 6 , wherein the control signals comprise signals to adjust signal line voltages based on the temperature evaluation feedback.
8. The apparatus of claim 6 , wherein the temperature measurement of the apparatus comprises a relative temperature measurement of the apparatus including a relative value based on current and prior time periods of the temperature measurement of the apparatus.
9. The apparatus of claim 1 , wherein the voltage circuitry is configured to reset the signal line of the memory array to an inactive voltage responsive to receipt of a post-access command.
10. An apparatus comprising:
a memory array including signal lines;
a voltage generator configured to drive at least one of the signal lines to a ready-access voltage; and
a control logic circuit configured to receive a plurality of commands regarding the at least one signal line and to evaluate a temperature of the apparatus for a memory access operation.
11. The apparatus of claim 10 , wherein the control logic circuit is further configured to determine a voltage value for the at least one global access line based on the temperature of the apparatus.
12. The apparatus of claim 10 , wherein the control logic circuit is further configured to provide a control signal to cause the at least one signal line to be charged to a ready-access voltage responsive to receipt of an access command.
13. The apparatus of claim 10 , wherein the voltage generator is configured to drive at least one of the signal lines to a different voltage based on the temperature of the apparatus.
14. The apparatus of claim 10 , wherein the control logic is further configured to evaluate a relative temperature measurement of the apparatus to evaluate the temperature of the apparatus for the memory access operation.
15. A method comprising:
providing a control signal that prepares a signal line of a memory for memory access;
determining a voltage for the signal line based partly on a temperature condition of the memory; and
accessing the memory responsive to receipt of an access command.
16. The method of claim 15 , further comprising:
responsive to receipt of the control signal, evaluating a temperature of the memory to determine the temperature condition of the memory.
17. The method of claim 16 , wherein the evaluating the temperature of the memory to determine the temperature condition of the memory and the determining the voltage for the signal line based partly on the temperature condition of the memory occur during a specific temperature time period of a time period for preparing the signal line of the memory for memory access.
18. The method of claim 15 , further comprising:
charging the signal line of the memory to a ready-access voltage.
19. The method of claim 18 , further comprising:
responsive to receipt of another control signal, adjusting the ready-access voltage of the signal line of the memory to a different voltage.
20. The method of claim 19 , wherein adjusting the ready-access voltage of the signal line comprises measuring a temperature of the memory to determine a relative temperature measurement of the memory.