Clamp elements for phase change memory arrays
View Patent ↗Clamp elements, memories, apparatuses, and methods for forming the same are disclosed herein. An example memory may include an array of memory cells and a plurality of clamp elements. A clamp element of the plurality of clamp elements may include a cell structure formed non-orthogonally relative to at least one of a bit line or a word line of the array of memory cells and may be configured to control a voltage of a respective bit line.
1. A method for forming cell structures, comprising:
forming a chalcogenic material over a plurality of contacts;
after forming the chalcogenic material, forming a mask material;
removing portions of the mask material to form a plurality of mask elements, wherein at least a mask hole is located between the plurality of mask elements and positioned non-orthogonally relative the plurality of contacts;
removing a portion of the chalcogenic material to form a plurality of chalcogenic material elements; and
forming a plurality of bit lines over the chalcogenic material elements.
2. The method of claim 1 , wherein the chalcogenic material comprises GST.
3. The method of claim 1 , further comprising:
forming a bit line cap material over the chalcogenic material.
4. The method of claim 1 , wherein said forming the plurality of bit lines comprises:
forming a bit line mask configured to provide a bit line pattern; and
removing exposed portions of the chalcogenic material between the bit line mask.
5. The method of claim 1 ; further comprising:
after forming the mask hole in the mask material, forming a spacer material.
6. The method of claim 1 , further comprising:
after forming the chalcogenic material, forming a bit line cap material over the chalcogenic material.
7. The method of claim 6 , further comprising:
forming a sealant material over the plurality of chalcogenic material elements.
8. The method of claim 7 , further comprising:
forming a filling material over the sealant material.
9. The method of claim 8 , further comprising:
removing at least a portion of the filling material and the sealant material to expose the bit line cap material.
10. The method of claim 9 , wherein the plurality of hit lines contact the exposed bit line cap material.