IP Library Granted Patent US 10,199,081
Granted Patent B1
US 10,199,081 · App. 15/833,688 · Granted Feb 5, 2019

Apparatuses and methods for providing bias signals in a semiconductor device

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Quick Facts
Patent No.
US 10,199,081
App. No.
15/833,688
Granted
Feb 5, 2019
Kind
B1
Abstract

Apparatuses and methods for providing bias signals in a semiconductor device are described. As example apparatus includes a power supply line configured to provide a supply voltage and further includes first and second nodes. An impedance element is coupled between the power supply line and the first node and a first transistor having a gate, a source coupled to the first node, and a drain coupled to the second node. A reference line is configured to provide a reference voltage. A second transistor has a gate, a source coupled to the reference line, and a drain. The gate and the drain of the second transistor are coupled to the gate of the first transistor.

Claims (34)

1. An apparatus comprising:

a power supply line configured to provide a supply voltage;

first and second nodes;

an impedance element coupled between the power supply line and the first node;

a first transistor having a gate, a source coupled to the first node, and a drain coupled to the second node;

a reference line configured to provide a reference voltage;

a second transistor having a gate, a source coupled to the reference line, and a drain, the gate and the drain of the second transistor coupled to the gate of the first transistor;

an additional power supply line configured to provide an additional supply voltage;

an additional impedance element coupled between the second node and the additional power supply line;

a third node;

a third transistor coupled between the power supply line and the third node; and

a fourth transistor coupled between the third node and the second node,

wherein a bias current flows through the third transistor and the fourth transistor, the apparatus further comprising an input buffer coupled to the third node, the input buffer being configured to amplify external data with consumption of a current generated responsively to the bias current.

2. The apparatus of claim 1 , wherein the fourth transistor is controlled to keep the second node at a first voltage regardless of a value of the supply voltage.

3. The apparatus of claim 1 wherein the input buffer comprises a transistor and the third transistor is configured to be coupled with the transistor of the input buffer as a current mirror circuit.

4. The apparatus of claim 1 wherein a voltage of the first node is equal to a sum of a threshold voltage of the first transistor and the reference voltage provided by the reference line that is reduced by the voltage across the second transistor.

5. The apparatus of claim 1 , further comprising an amplifier circuit configured as a voltage follower and configured to provide the reference voltage to the reference line.

6. The apparatus of claim 1 wherein the impedance element comprises an adjustable resistance.

7. The apparatus of claim 1 , further comprising:

an additional power supply line configured to provide an additional supply voltage; and

an additional impedance element coupled between the drain of the second transistor and the additional power supply line.

8. An apparatus comprising:

a power supply line configured to provide a supply voltage;

first and second nodes;

an impedance element coupled between the power supply line and the first node;

a first transistor having a gate, a source coupled to the first node, and a drain coupled to the second node;

a reference line configured to provide a reference voltage;

a second transistor having a gate, a source coupled to the reference line, and a drain, the gate and the drain of the second transistor coupled to the gate of the first transistor;

an additional power supply line configured to provide an additional supply voltage;

an additional impedance element coupled between the second node and the additional power supply line;

a third node;

a third transistor coupled between the power supply line and the third node;

a fourth transistor coupled between the third node and the second node; and

an amplifier circuit having an output coupled to a gate of the fourth transistor, and further having a first input configured to receive a second reference voltage and a second input coupled to the second node.

Assignments (5)
RELEASE OF SECURITY INTEREST Recorded Nov 12, 2019
From: JPMORGAN CHASE BANK, N.A., AS COLLATERAL AGENT
To: MICRON TECHNOLOGY, INC.; MICRON SEMICONDUCTOR PRODUCTS, INC.
Reel/Frame 051028/0001 →
RELEASE OF SECURITY INTEREST Recorded Oct 10, 2019
From: MORGAN STANLEY SENIOR FUNDING, INC., AS COLLATERAL AGENT
To: MICRON TECHNOLOGY, INC.
Reel/Frame 050716/0678 →
SECURITY INTEREST Recorded Jul 13, 2018
From: MICRON TECHNOLOGY, INC.; MICRON SEMICONDUCTOR PRODUCTS, INC.
To: JPMORGAN CHASE BANK, N.A., AS COLLATERAL AGENT
Reel/Frame 047540/0001 →
SUPPLEMENT NO. 7 TO PATENT SECURITY AGREEMENT Recorded Feb 6, 2018
From: MICRON TECHNOLOGY, INC.
To: MORGAN STANLEY SENIOR FUNDING, INC., AS COLLATERAL AGENT
Reel/Frame 045267/0833 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Dec 6, 2017
From: ASAKI, KENJI; TSUKADA, SHUICHI
To: MICRON TECHNOLOGY, INC.
Reel/Frame 044320/0859 →