Methods of processing semiconductor device structures and related systems
Methods of processing a semiconductor device structure comprise cooling an electrostatic chuck (ESC) for the semiconductor device structure, which comprises tiers of alternating materials including at least one dielectric material, to a temperature of −30° C. or less, forming an opening in the semiconductor device structure with a plasma of a gas comprising a hydrogen-based gas and a fluorine-based gas in which the hydrogen-based gas comprises between about 10 vol % and 90 vol %. Other methods of processing a semiconductor device structure comprise cooling an ESC for the semiconductor device structure to a temperature of −30° C. or less, applying a low frequency radio frequency (RF) having a non-sinusoidal waveform to the ESC, and forming an opening in the semiconductor device structure with a generated plasma. A processing system includes an ESC, a coolant system, and a low frequency RF power source generating a non-sinusoidal waveform comprising a combination of multiple sinusoidal waveforms.
1. A method of processing a semiconductor device structure, comprising:
generating a plasma of a gas comprising a hydrogen-based gas and a fluorine-based gas, the hydrogen-based gas comprising between about 40 percent by volume (vol %) and about 75 vol % of the gas, the hydrogen-based gas comprising hydrogen (H 2 );
cooling an electrostatic chuck on which a semiconductor device structure is positioned to a temperature of about −30° C. or less, the semiconductor device structure comprising tiers of alternating materials including at least one dielectric material;
applying a low frequency radio frequency having a non-sinusoidal waveform to the electrostatic chuck; and
with the plasma and while cooling the electrostatic chuck and applying the low frequency radio frequency, forming a high aspect ratio opening in the semiconductor device structures;
wherein the high aspect ratio is at least about 50:1.
2. The method of claim 1 , wherein generating a plasma of a gas comprises generating a plasma of a gas comprising about 50 vol % hydrogen-based gas.
3. The method of claim 1 , wherein generating a plasma of a gas comprises generating a plasma of a gas comprising difluoromethane (CH 2 F 2 ), the hydrogen (H 2 ), and nitrogen trifluoride (NF 3 ).
4. The method of claim 1 , wherein generating a plasma of a gas comprises generating a plasma of a gas comprising methane (CH 4 ), the hydrogen (H 2 ), and nitrogen trifluoride (NF 3 ).
5. The method of claim 1 , wherein generating a plasma of a gas comprises generating a plasma of a gas comprising the hydrogen (H 2 ) and carbon tetrafluoride (CF 4 ).
6. The method of claim 1 , wherein generating a plasma of a gas comprises generating a plasma of a gas comprising carbonyl sulfide (COS), hydrogen bromide (HBr), methane (CH 4 ), octafluorocyclobutane (C 4 F 8 ), fluoromethane (CH 3 F), the hydrogen (H 2 ), nitrogen trifluoride (NF 3 ), and trifluoroiodomethane (CF 3 I).
7. The method of claim 1 , wherein cooling an electrostatic chuck comprises cooling the electrostatic chuck to a temperature of about −60° C. or less.
8. The method of claim 1 , wherein the semiconductor device structure comprises alternating tiers of the at least one dielectric material and another dielectric material.
9. The method of claim 1 , wherein the semiconductor device structure comprises alternating tiers of the at least one dielectric material and a conductive material.
10. The method of claim 1 , wherein the at least one dielectric material comprises a silicon oxide.
11. A method of processing a semiconductor device structure, comprising:
generating a plasma of a gas comprising a hydrogen-based gas in a range from about 40 vol % to about 90 vol % of the plasma, the hydrogen-based gas comprising hydrogen (H 2 );
cooling an electrostatic chuck on which a semiconductor device structure is positioned to a temperature of about −30° C. or less, the semiconductor device structure comprising tiers of alternating materials including at least one dielectric material;
applying a low frequency radio frequency having a non-sinusoidal waveform to the electrostatic chuck; and
with the plasma and while cooling the electrostatic chuck and applying the low frequency radio frequency, forming a high aspect ratio opening in the semiconductor device structure;
wherein the high aspect ratio is at least about 50:1.
12. The method of claim 11 , further comprising combining a plurality of sinusoidal waveforms to generate the low frequency radio frequency having the non-sinusoidal waveform.
13. The method of claim 12 , wherein combining a plurality of sinusoidal waveforms to generate the low frequency radio frequency comprises combining a fundamental frequency and at least two harmonic frequencies of the fundamental frequency.
14. The method of claim 12 , wherein combining a plurality of sinusoidal waveforms to generate the low frequency radio frequency comprises combining at least a fundamental frequency, a third harmonic frequency of the fundamental frequency, and a fifth harmonic frequency of the fundamental frequency.
15. The method of claim 11 , wherein applying a low frequency radio frequency to the electrostatic chuck comprises applying a radio frequency having a frequency between about 100 Hz and about 3.2 MHz or less.
16. The method of claim 11 , wherein generating a plasma of a gas comprises generating a plasma of a gas comprising difluoromethane (CH 2 F 2 ), the hydrogen (H 2 ), and nitrogen trifluoride (NF 3 ) into a reaction chamber.
17. The method of claim 11 , wherein generating a plasma of a gas comprises generating a plasma of a gas comprising the hydrogen (H 2 ) and carbon tetrafluoride (CF 4 ).
18. The method of claim 11 , wherein generating a plasma of a gas comprises generating a plasma of a gas comprising carbonyl sulfide (COS), hydrogen bromide (HBr), methane (CH 4 ), octafluorocyclobutane (CIF's), fluoromethane (CH 3 F), the hydrogen (H 2 ), nitrogen trifluoride (NF 3 ), and trifluoroiodomethane (CF 3 I).
19. The method of claim 11 , wherein cooling an electrostatic chuck comprises cooling the electrostatic chuck to a temperature of about −60° C. or less.
20. A system for processing a semiconductor device structure, comprising:
a chamber;
an electrode in the chamber;
at least a DC power source operably coupled to the electrode;
an electrostatic chuck located in the chamber below the electrode and configured to receive a semiconductor device structure thereon;
a coolant system operably coupled to the electrostatic chuck and configured to reduce the electrostatic chuck to a temperature of about −30° C. or less; and
at least one low frequency radio frequency (RF) power source coupled to the electrostatic chuck, the low frequency RF power source configured to generate a frequency of between about 100 Hz and about 3.2 MHz exhibiting a non-sinusoidal waveform comprising a combination of a plurality of sinusoidal waveforms for application to the electrostatic chuck to form a high aspect ratio opening of at least about 50:1 in the semiconductor device structure received on the electrostatic chuck.
21. The system of claim 20 , wherein the at least one low frequency RF power source is configured to generate a frequency having a non-sinusoidal waveform by combining a fundamental frequency with at least two harmonic frequencies of the fundamental frequency.
22. The system of claim 21 , wherein the at least two harmonic frequencies of the fundamental frequency comprise a third harmonic frequency and a fifth harmonic frequency of the fundamental frequency.
23. The system of claim 20 , wherein the at least one low frequency RF power source is configured to generate a non-sinusoidal waveform having one of a square waveform shape and a flat-bottom waveform shape.
24. The system of claim 20 , wherein one of the electrode and the electrostatic chuck is operably coupled to a high frequency RF power source configured to generate a frequency of about 13 MHz to about 60 MHz.