Apparatuses and methods for sensing a phase change test cell and determining changes to the test cell resistance due to thermal exposure
A phase change memory array may include at least one cell used to determine whether the array has been altered by thermal exposure over time. The cell may be the same or different from the other cells. In some embodiments, the cell is only read in response to an event. If, in response to that reading, it is determined that the cell has changed state or resistance, it may deduce whether the change is a result of thermal exposure. Corrective measures may then be taken.
1. A method, comprising:
Measuring a respective resistance of selected phase change memory cells of a phase change memory array;
Determining, based on the measured respective resistance of the selected phase change memory cells, which of the selected phase change memory cells have experienced a reduction in resistance by at least a predetermined magnitude below a respective initial resistance; and
Refreshing the phase change memory array in response to a number of the selected phase change memory cells determined to have experienced the reduction in resistance by at least the predetermined magnitude below the respective initial resistance exceeds a predetermined number of memory cells.
2. The method of claim 1 , wherein measuring the respective resistance of the selected phase change memory cells of the phase change memory array comprises measuring the respective resistance of each phase change memory cell of the phase change memory array.
3. The method of claim 1 , wherein measuring the respective resistance of the selected phase change memory cells of the phase change memory array comprises measuring a resistance of a plurality of phase change test cells of the phase change memory array.
4. The method of claim 1 , measuring the respective resistance of the selected phase change memory cells of the phase change memory array comprises measuring a resistance of a plurality of phase change test cells located at each corner and at a center of the phase change memory array.
5. The method of claim 4 , wherein the plurality of phase change test cells are more sensitive to thermal degradation than other phase change memory cells of the phase change memory array.
6. A method, comprising:
measuring a respective characteristic of a selected subset of phase change memory cells of a phase change memory array;
determining, based on the measured respective characteristic of each of the selected phase change memory cells, which of the selected subset of phase change memory cells have experienced a change in the respective characteristic by at least a predetermined magnitude from a respective initial value of the respective characteristic; and
refreshing the phase change memory array in response to a number of the selected subset of phase change memory cells determined to have experienced the change in the respective characteristic by at least the predetermined magnitude from the respective initial value of the respective characteristic exceeds a predetermined number of memory cells.
7. The method of claim 6 , wherein the respective characteristic includes resistance.
8. The method of claim 6 , wherein measuring the respective characteristic of the selected subset of phase change memory cells of the phase change memory array comprises measuring a respective resistance of a plurality of phase change test cells of a phase change memory array.
9. The method of claim 6 , wherein measuring the respective characteristic of each of the selected subset of phase change memory cells of the phase change memory array comprises measuring a respective resistance of a plurality of phase change test cells located at each corner and at a center of the phase change memory array.
10. The method of claim 9 , wherein the plurality of phase change test cells are more sensitive to thermal degradation than other phase change memory cells of the phase change memory array.
11. A method comprising:
Measuring a respective resistance of selected phase change memory cells of a phase change memory array;
determining, for each of the selected phase change memory cells, whether the respective resistance has been reduced from a respective initial resistance by more than a predetermined magnitude; and
determining whether a number of the selected phase change memory cells determined to have experienced a reduction in the respective resistance from the respective initial resistance by more than the predetermined magnitude exceeds a predetermined number of memory cells.
12. The method of claim 11 , wherein measuring the respective resistance of the selected phase change memory cells of the phase change memory array comprises measuring a resistance of a plurality of phase change test cells located at each corner and at a center of the phase change memory array.
13. The method of claim 12 , wherein the plurality of phase change test cells are more sensitive to thermal degradation than other phase change memory cells of the phase change memory array.