Error correction code scrub scheme

1. A method, comprising:

reading a plurality of data bits and a plurality of parity bits from a memory array;

decoding the plurality of data bits and the plurality of parity bits;

determining an error associated with a first parity bit of the plurality of parity bits based at least in part on decoding the plurality of data bits and the plurality of parity bits, wherein the error is determined based at least in part on identifying an incorrect bit value of the first parity bit;

correcting the error associated with the first parity bit based at least in part on determining the error; and

writing the corrected first parity bit to the memory array based at least in part on correcting the error associated with the first parity bit.

2. The method of claim 1 , further comprising:

writing the plurality of data bits to the memory array based at least in part on correcting the error associated with the first parity bit.

3. The method of claim 1 , further comprising:

reading a second plurality of data bits and a second plurality of parity bits from the memory array;

decoding the second plurality of data bits and the second plurality of parity bits;

determining a second error associated with a first data bit of the second plurality of data bits based at least in part on decoding the second plurality of data bits and the second plurality of parity bits;

correcting the error associated with the first data bit of the second plurality of data bits based at least in part on determining the error; and

writing the corrected first data bit to the memory array based at least in part on correcting the error associated with the first data bit.

4. The method of claim 3 , wherein the error associated with the first parity bit is corrected before the error associated with the first data bit of the second plurality of data bits is corrected.

5. The method of claim 3 , further comprising:

multiplexing the corrected first data bit with an additional plurality of data bits before writing the corrected first data bit to the memory array.

6. The method of claim 1 , wherein the first parity bit of the plurality of parity bits is associated with a subset of the plurality of data bits.

7. The method of claim 1 , wherein the memory array comprises a plurality of dynamic random-access memory (DRAM) cells.

8. The method of claim 7 , wherein the plurality of data bits and the plurality of parity bits are decoded in response to a refresh operation of at least one of the plurality of DRAM cells.

9. The method of claim 1 , wherein the memory array comprises a plurality of ferroelectric memory cells (FeRAM).

10. A memory device, comprising:

a memory array comprising a plurality of memory cells;

a decoder coupled with the memory array, the decoder configured to decode a plurality of data bits and a plurality of parity bits read from the memory array; and

an error correction component coupled with the decoder, the error correction component configured to:

determine at least one error associated with a first parity bit of the plurality of parity bits, or a first data bit of the plurality of data bits, or both, wherein the at least one error is determined based at least in part on identifying an incorrect bit value of the first parity bit, the first data bit, or both; and

correct an error associated with the first parity bit of the plurality of parity bits based at least in part on determining the at least one error.

11. The memory device of claim 10 , wherein the error correction component is further configured to:

initiate writing the corrected first parity bit to the memory array.

12. The memory device of claim 11 , further comprising:

multiplexing the corrected first data bit with an additional plurality of data bits before writing the corrected first data bit to the memory array.

13. The memory device of claim 12 , wherein the corrected first data bit is multiplexed with the additional plurality of data bits during a data mask operation.

14. The memory device of claim 10 , wherein the error correction component is further configured to:

correct the error associated with the first data bit of the plurality of data bits; and

initiate writing the corrected first data bit to the memory array.

15. The memory device of claim 10 , wherein the memory array comprises a plurality of dynamic random-access memory (DRAM) cells, and wherein the plurality of data bits and the plurality of parity bits are decoded in response to a refresh operation of at least one of the plurality of DRAM cells.

16. The memory device of claim 10 , wherein the memory array comprises a plurality of ferroelectric memory cells (FeRAM).

17. An apparatus, comprising:

a memory array comprising a plurality of memory cells;

a decoder coupled with the memory array;

an error correction component coupled with the decoder; and

a controller coupled with the memory array, the controller operable to:

initiate reading a plurality of data bits and a plurality of parity bits from the memory array;

initiate decoding of the plurality of data bits and the plurality of parity bits;

initiate determining an error associated with a first parity bit of the plurality of parity bits, wherein the error is determined based at least in part on identifying an incorrect bit value of the first parity bit;

initiate correcting the error associated with the first parity bit; and

initiate writing the corrected first parity bit to the memory array.

18. The apparatus of claim 17 , wherein the controller is operable to initiate decoding the plurality of data bits and the plurality of parity bits in response to a refresh operation.

19. The apparatus of claim 17 , wherein the controller is operable to initiate correcting the error associated with the first parity bit in response to determining the error associated with the first parity bit of the plurality of parity bits.