Super CMOS devices on a microelectronics system
A low cost IC solution is disclosed to provide Super CMOS microelectronics macros. Hereinafter, the Super CMOS or Schottky CMOS all refer to SCMOS. The SCMOS device solutions with a niche circuit element, the complementary low threshold Schottky barrier diode pairs (SBD) made by selected metal barrier contacts (Co/Ti) to P— and N—Si beds of the CMOS transistors. A DTL like new circuit topology and designed wide contents of broad product libraries, which used the integrated SBD and transistors (BJT, CMOS, and Flash versions) as basic components. The macros include diodes that are selectively attached to the diffusion bed of the transistors, configuring them to form generic logic gates, memory cores, and analog functional blocks from simple to the complicated, from discrete components to all grades of VLSI chips. Solar photon voltaic electricity conversion and bio-lab-on-a-chip are two newly extended fields of the SCMOS IC applications.
1. An electronic system, comprising:
a substrate;
a first transistor device formed on the substrate, wherein the first transistor device has a diffusion bed; and
a first Schottky barrier diode (SBD) formed on the substrate, wherein the first SBD is attached to the diffusion bed of the first transistor device and includes a metal barrier contact to the diffusion bed of the first transistor device, wherein the first SBD and the first transistor device are isolated from other semiconductor devices on the substrate via an isolation trench.
2. The electronic system of claim 1 , wherein the first SBD includes a p-type SBD.
3. The electronic system of claim 1 , wherein the first SBD includes an n-type SBD.
4. The electronic system of claim 1 , wherein the first transistor device includes one of metal oxide field effect transistor device (MOSFET), a bipolar junction transistor device (BJT) and a multi-level cell FLASH transistor.
5. The electronic system of claim 4 , wherein the first transistor device is based on at least one of Silicon (Si), Silicon-Germanium (SiGe), Gallium Arsenide (GaAs), Gallium Nitride (GaN), Indium Phosphide (InP), and other III-V Compound Semiconductor materials and combination thereof.
6. The electronic system of claim 5 , wherein the first SBD has a substantially low threshold voltage that is no greater than 0.5V.
7. The electronic system of claim 1 , wherein the metal barrier contact of the first SBD is made of Co/Ti.
8. The electronic system of claim 1 , further comprising a second SBD formed on the substrate, wherein the second SBD is attached to a diffusion bed of a second transistor device that is distinct from the first transistor device.
9. The electronic system of claim 8 , wherein the first and second SBDs are complementary to each other.
10. The electronic system of claim 1 , wherein the first SBD and the first transistor device are disposed in a semiconductor well on the substrate.
11. The electronic system of claim 1 , wherein the substrate includes a sub-implant layer that is buried underneath the first SBD, and the first transistor device does not lie on top of the sub-implant layer.
12. The electronic system of claim 1 , wherein the isolation trench is filled with oxide.
13. The electronic system of claim 1 , wherein the SBD includes a low barrier SBD.
14. The electronic system of claim 1 , wherein the first SBD includes a cathode, an anode, and a blockout region disposed on top of one of the cathode and the anode.
15. The electronic system of claim 1 , wherein the diffusion bed of the first transistor device includes a drain of the first transistor.
16. The electronic system of claim 15 , wherein the first transistor device and the first SBD are configured to implement at least one of a memory, a solar concentrator, a pass transistor device logic, an amplifier, a HI-Z block, a Schmitt trigger, an RFID circuit, a high-frequency timing block, and a memory peripheral.
17. The electronic system of claim 1 , wherein the first transistor device occupies a first area of the substrate, and the first SBD occupies a second area of the substrate that is substantially smaller than the first area of the substrate.
18. The electronic system of claim 1 , wherein the first transistor device includes a gate surrounded by a layer of tunnel oxide.
19. The electronic system of claim 18 , wherein the thickness of the layer of tunnel oxide is substantially equal to or less than 10 nm.
20. The electronic system of claim 1 , wherein the substrate is made of (i) one of silicon single crystal, amorphous silicon, glass, GaAs, or other semiconductor compound material, and (ii) a metal panel.