Vertically stacked nFET and pFET with dual work function
A semiconductor structure is provided that includes a pFET device including a first functional gate structure containing at least a p-type work function metal and present on physically exposed surfaces, and between, each Si channel material nanosheet of a first set of vertically stacked and suspended Si channel material nanosheets. The structure further includes an nFET device stacked vertically above the pFET device. The nFET device includes a second functional gate structure containing at least an n-type work function metal present on physically exposed surfaces, and between, each Si channel material nanosheet of a second set of vertically stacked and suspended Si channel material nanosheets.
1. A semiconductor structure comprising:
a p-type field effect transistor (pFET) device comprising a first functional gate structure containing at least a p-type work function metal and present on physically exposed surfaces, and between, each Si channel material nanosheet of a first set of vertically stacked and suspended Si channel material nanosheets;
an n-type field effect transistor (nFET) device stacked vertically above the pFET device and comprising a second functional gate structure containing at least an n-type work function metal present on physically exposed surfaces, and between, each Si channel material nanosheet of a second set of vertically stacked and suspended Si channel material nanosheets; and
an air gap present between a middle portion of each Si channel material nanosheet of the first set of vertically stacked and suspended Si channel material nanosheets.
2. The semiconductor structure of claim 1 , further comprising pFET source/drain (S/D) regions present on physically exposed sidewalls of each Si channel material nanosheet of the first set of vertically stacked and suspended Si channel material nanosheets, and nFET S/D regions present on physically exposed sidewalls of each Si channel material nanosheet of the second set of vertically stacked and suspended Si channel material nanosheets.
3. The semiconductor structure of claim 2 , further comprising a dielectric material located between each pFET S/D region and each nFET S/D region.
4. The semiconductor structure of claim 2 , further comprising a shared S/D contact structure located on a first side of the vertically stacked nFET and pFET devices, wherein the shared contact structure passes through one of the nFET S/D regions and into one of the underlying pFET S/D regions.
5. The semiconductor structure of claim 4 , further comprising an nFET S/D contact structure and a pFET S/D contact structure located on a second side of the vertically stacked nFET and pFET devices, opposite the first side, wherein the nFET S/D contact structure is present in another of nFET S/D regions and the pFET contact structure is present in another of the pFET S/D regions.
6. The semiconductor structure of claim 5 , wherein the nFET S/D contact structure is separated from the pFET S/D contact structure by a dielectric material.
7. The semiconductor structure of claim 1 , wherein the p-type work function metal comprises TiN.
8. The semiconductor structure of claim 1 , further comprising a dielectric isolation layer located beneath the pFET device, the dielectric isolation layer is located on a surface of a semiconductor substrate.
9. The semiconductor structure of claim 1 , further comprising a metallic structure located above a topmost Si channel material nanosheet of the second set of vertically stacked and suspended Si channel material nanosheets.
10. The semiconductor structure of claim 1 , further comprising an inner spacer located at least between an end portion of each Si channel material nanosheet of the first and second sets of vertically stacked and suspended Si channel material nanosheets.
11. The semiconductor structure of claim 1 , wherein the first and second functional gate structures comprise a gate dielectric material, wherein the gate dielectric material of the first functional gate structure surrounds the p-type work function metal and wherein the gate dielectric material of the second functional gate structure surrounds the n-type work function metal.
12. A semiconductor structure comprising:
a p-type field effect transistor (pFET) device comprising a first functional gate structure containing at least a p-type work function metal and present on physically exposed surfaces, and between, each Si channel material nanosheet of a first set of vertically stacked and suspended Si channel material nanosheets;
an n-type field effect transistor (nFET) device stacked vertically above the pFET device and comprising a second functional gate structure containing at least an n-type work function metal present on physically exposed surfaces, and between, each Si channel material nanosheet of a second set of vertically stacked and suspended Si channel material nanosheets;
pFET source/drain (S/D) regions present on physically exposed sidewalls of each Si channel material nanosheet of the first set of vertically stacked and suspended Si channel material nanosheets;
nFET S/D regions present on physically exposed sidewalls of each Si channel material nanosheet of the second set of vertically stacked and suspended Si channel material nanosheets;
a shared S/D contact structure located on a first side of the vertically stacked nFET and pFET devices, wherein the shared contact structure passes through one of the nFET S/D regions and into one of the underlying pFET S/D regions; and
an nFET S/D contact structure and a pFET S/D contact structure located on a second side of the vertically stacked nFET and pFET devices, opposite the first side, wherein the nFET S/D contact structure is present in another of nFET S/D regions and the pFET contact structure is present in another of the pFET S/D regions.