Fabricating fin-based split-gate high-drain-voltage transistor by work function tuning
A method is presented for creating an asymmetrical split-gate structure. The method includes forming a first device, forming a second device, forming a first gate stack between a first set of spacers of the first device, and a second gate stack between a second set of spacers of the second device. The method further includes depositing a hard mask over the first and second gate stacks, etching a first section of the first gate stack to create a first gap and a second section of the second gate stack to create a second gap, and forming a third gate stack within the first gap of the first gate stack and within the second gap of the second gate stack such that dual gate stacks are defined for each of the first and second devices. The method further includes annealing the dual gate stacks to form replacement metal gate stacks.
1. A method for creating an asymmetrical split-gate structure, the method comprising:
forming a first device over a semiconductor substrate, the first device having first source drain regions formed adjacent a first set of spacers;
forming a second device over the semiconductor substrate, the second device having second source/drain regions formed adjacent a second set of spacers;
forming a first gate stack between the first set of spacers of the first device and a second gate stack between the second set of spacers of the second device;
depositing a hard mask over the first and second gate stacks;
etching a first section of the first gate stack to create a first gap region and a second section of the second gate stack to create a second gap region;
forming a third gate stack within the first gap region of the first gate stack, the third gate stack having a different number of layers than the first gate stack, and a fourth gate stack within the second gap region of the second gate stack such that dual gate stacks are defined for each of the first and second devices; and
annealing the dual gate stacks of the first and second devices to form first and second replacement metal gate stacks, respectively.
2. The method of claim 1 , wherein a work function of the first replacement metal gate stack is different than a work function of the second replacement metal gate stack.
3. The method of claim 1 , wherein the first device is an n-type field effect transistor (FET) and the second device is a p-type FET.
4. The method of claim 1 , wherein the first and second gate stacks include a same number and type of material layers.
5. The method of claim 1 , wherein the first and second gate stacks each include a first conducting layer, an AO layer, and a second conducting layer.
6. The method of claim 5 , wherein the first and second conducting layers are titanium nitride (TiN) and the AO layer is a lanthanum oxide (La 2 O 3 ) layer.
7. The method of claim 1 , wherein the third gate stack includes an AO layer and a conducting layer.
8. The method of claim 1 , wherein the first replacement metal gate stack of the first device and the second replacement metal gate stack of the second device include TiN layers.
9. The method of claim 8 , further comprising depositing an amorphous silicon layer over each of the first replacement metal gate stack of the first device and the second replacement metal gate stack of the second device.
10. The method of claim 1 , further comprising depositing an amorphous silicon layer before the annealing step.