Structure and method for integrated circuit

1. A method comprising:

forming a gate stack over a substrate, the gate stack including a gate dielectric layer and a gate electrode layer;

forming a sidewall spacer along a sidewall of the gate stack;

removing a portion of the sidewall spacer to form an inclined edge of the sidewall spacer, the inclined edge inclining toward the gate stack and physically contacting the substrate;

after removing the portion of the sidewall spacer to form the inclined edge of the sidewall spacer, removing a portion of the substrate positioned under the inclined edge to form a recess within the substrate; and

forming a source/drain feature in the recess.

2. The method of claim 1 , wherein the source/drain feature physically contacts the inclined edge of the sidewall spacer.

3. The method of claim 1 , further comprising implanting a dopant species into the portion of the substrate prior to the removing of the portion of the substrate positioned under the inclined edge to form the recess within the substrate.

4. The method of claim 1 , wherein the forming of the sidewall spacer along the sidewall of the gate stack includes:

depositing a dielectric layer over the gate stack; and

performing an anisotropic etching process on the dielectric layer.

5. The method of claim 1 , wherein the forming of the source/drain feature in the recess includes epitaxially growing the source/drain feature.

6. The method of claim 1 , further comprising removing the gate dielectric layer and the gate electrode later after the forming of the source/drain feature in the recess.

7. The method of claim 1 , wherein after the removing of the portion of the sidewall spacer to form the inclined edge of the sidewall spacer, the sidewall spacer includes an inner edge physically contacting the gate stack and an outer edge that is substantially perpendicular to the substrate, the inclined edge extending from the outer edge to the inner edge of the sidewall spacer.

8. A method comprising:

forming a gate stack over a substrate, the gate stack including a gate dielectric layer and a gate electrode layer;

forming a sidewall spacer along a sidewall of the gate stack;

removing a portion of the sidewall spacer to form a modified sidewall spacer, the modified sidewall spacer including:

an inclined edge that faces the substrate while inclining toward the gate stack; and

another edge that is substantially perpendicular to the substrate that physically contacts the inclined edge, wherein the another edge includes a portion that extends to the substrate beyond the point of contact with the inclined edge.

9. The method of claim 8 , further comprising removing a portion of the substrate under the modified sidewall spacer after removing the portion of the sidewall spacer to form the modified sidewall spacer.

10. The method of claim 8 , further comprising forming a source/drain feature in the substrate adjacent the gate stack after the removing of the portion of the sidewall spacer to form the modified sidewall spacer.

11. The method of claim 10 , wherein the source/drain feature physically contacts the inclined edge of the modified sidewall spacer.

12. The method of claim 8 , wherein the modified sidewall spacer further includes:

an inner edge that physically contacts the gate stack and opposes the another edge; and

an outer edge that is substantially perpendicular to the substrate and opposes the inner edge.

13. The method of claim 8 , wherein the removing of the portion of the sidewall spacer to form the modified sidewall spacer includes performing a wet etching process.

14. The method of claim 8 , wherein the removing of the portion of the sidewall spacer to form the modified sidewall spacer includes performing a dry etching process.

15. A method comprising:

forming a first spacer along a sidewall of a first gate stack disposed over a substrate;

removing a portion of the first spacer to form a first cavity within the first spacer and a first inclined edge of the first spacer, wherein the first cavity is defined by the first inclined edge of the first spacer that inclines towards the first gate stack;

after removing the portion of the first spacer to form the first cavity within the first spacer and the first inclined edge of the first spacer, forming a first recess in the substrate adjacent the first gate stack; and

forming a first source/drain feature in the first recess and the first cavity.

16. The method of claim 15 , further comprising:

forming a second spacer along a sidewall of a second gate stack disposed over the substrate;

removing a portion of the second spacer to form a second cavity within the second spacer, wherein the second cavity is defined by a second inclined edge of the second spacer that inclines towards the second gate stack;

forming a second recess in the substrate adjacent the second gate stack; and

forming a second source/drain feature in the second recess and the second cavity, the second source/drain feature being formed of a different material than the first source/drain feature.

17. The method of claim 16 , wherein the first source/drain feature includes silicon and the second source/drain feature includes germanium.

18. The method of claim 15 , wherein the first inclined edge physically contacts the substrate prior to the forming of the first recess in the substrate adjacent the first gate stack.

19. The method of claim 15 , wherein the first cavity is further defined by another edge of the first spacer, the another edge being substantially perpendicular to the substrate and physically contacting the inclined edge, the another edge including a portion that extends to the substrate beyond the point of contact with the inclined edge.

20. The method of claim 15 , further comprising implanting a dopant species into a portion of the substrate after the removing of the portion of the first spacer to form the first cavity within the first spacer, and

wherein the forming of the first recess in the substrate adjacent the first gate stack includes removing the portion of the substrate.