IP Library Granted Patent US 10,991,588
Granted Patent B2
US 10,991,588 · App. 15/803,876 · Granted Apr 27, 2021

Manufacturing method of semiconductor device and semiconductor device manufacturing apparatus

Inventors: Akifumi Gawase (Kuwana Mie, JP); Yukiteru Matsui (Nagoya Aichi, JP); Takahiko Kawasaki (Nagoya Aichi, JP)
Assignee: TOSHIBA MEMORY CORPORATION
H01L21/30604H01L21/32115H01L21/6708H01L21/67075H01L21/67086H01L21/68764
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Quick Facts
Patent No.
US 10,991,588
App. No.
15/803,876
Granted
Apr 27, 2021
Kind
B2
Abstract

In accordance with an embodiment, a manufacturing method of a semiconductor device includes bringing a first catalyst into contact with a workpiece to form an oxide film on a surface of the workpiece, and bringing a second catalyst different from the first catalyst and the oxide film into contact with each other or moving the second catalyst and the oxide film closer to each other to elute the oxide film into a treatment liquid.

Claims (48)

1. A semiconductor device manufacturing apparatus comprising:

a processing target holder configured to hold a workpiece with includes a first metal;

a first catalyst holder configured to hold a first catalyst, the first catalyst promoting formation of a metal oxide film of the first metal onto a surface of the workpiece by contact with the workpiece;

a second catalyst holder configured to hold a second catalyst, the second catalyst promoting elution of the metal oxide film into a treatment liquid by contact with or being moved closer to at least a part of the surface of the metal oxide film,

wherein the first catalyst holder and the second catalyst holder are independently controlled.

2. The apparatus of claim 1 ,

wherein the first catalyst holder provided at a periphery of the processing target holder.

3. The apparatus of claim 2 ,

wherein the first catalyst holder is movable in a plane horizontal to the surface of the workpiece.

4. The apparatus of claim 3 ,

wherein the movement comprises at least one of rotation and translation.

5. The apparatus of claim 2 ,

wherein the second catalyst holder is movable in a plane horizontal to the surface of the workpiece.

6. The apparatus of claim 5 ,

wherein the movement comprises at least one of rotation and translation.

7. The apparatus of claim 1 , further comprising a treatment liquid supplier which supplies the treatment liquid to the surface of the workpiece.

8. The apparatus of claim 1 , further comprising a treatment tank which accommodates the treatment liquid in such a manner that at least the surface of the workpiece is immersed in the treatment liquid.

9. The apparatus of claim 1 ,

wherein the processing target holder is rotatable in a plane horizontal to the surface of the workpiece.

10. The apparatus of claim 1 , wherein the first and second catalyst holders are respectively connected to a first and second shafts.

11. The apparatus of claim 1 , wherein the first and second catalyst holders are movable in a direction vertical to a surface of the workpiece and in a direction parallel thereto.

12. The apparatus of claim 11 , wherein the second catalyst holder is rotatable around the second shaft.

13. A semiconductor device manufacturing apparatus comprising:

a processing target holder configured to hold a workpiece which includes a first metal;

a first catalyst holder configured to hold a first catalyst; and

a second catalyst holder configured to hold a second catalyst,

wherein

the first catalyst has a lower ionization tendency than the first metal, and

the first catalyst holder and the second catalyst holder are independently controlled.

14. The apparatus of claim 13 ,

wherein the first catalyst holder provided at a periphery of the processing target holder.

15. The apparatus of claim 14 ,

wherein the first catalyst holder is movable in a plane horizontal to the surface of the workpiece.

16. The apparatus of claim 15 ,

wherein the movement comprises at least one of rotation and translation.

17. The apparatus of claim 14 ,

wherein the second catalyst holder is movable in a plane horizontal to the surface of the workpiece.

18. The apparatus of claim 17 ,

wherein the movement comprises at least one of rotation and translation.

19. The apparatus of claim 13 , further comprising a treatment liquid supplier which supplies a treatment liquid of an oxide film on the workpiece to the surface of the workpiece.

20. The apparatus of claim 13 , further comprising a treatment tank which accommodates the treatment liquid in such a manner that at least the surface of the workpiece is immersed in the treatment liquid.

21. The apparatus of claim 13 ,

wherein the processing target holder is rotatable in a plane horizontal to the surface of the workpiece.

22. The apparatus of claim 13 , wherein the second catalyst includes an alkali metal oxide, an alkaline-earth metal oxide, or a rare-earth metal oxide.

23. The apparatus of claim 13 , wherein the first catalyst includes Ag, Pd or Au, and the second catalyst includes MgO or CaO.

24. The apparatus of claim 13 , wherein the first and second catalyst holders are respectively connected to a first and second shafts.

25. The apparatus of claim 13 , wherein the first and second catalyst holders are movable in a direction vertical to a surface of the workpiece and in a direction parallel thereto.

26. The apparatus of claim 25 , wherein the second catalyst holder is rotatable around the second shaft.

Assignments (3)
CHANGE OF NAME AND ADDRESS Recorded Feb 4, 2022
From: K.K PANGEA
To: TOSHIBA MEMORY CORPORATION
Reel/Frame 058957/0124 →
CHANGE OF NAME AND ADDRESS Recorded Jan 31, 2022
From: TOSHIBA MEMORY CORPORATION
To: KIOXIA CORPORATION
Reel/Frame 058905/0582 →
MERGER Recorded Jan 31, 2022
From: TOSHIBA MEMORY CORPORATION
To: K.K PANGEA
Reel/Frame 058946/0675 →
Priority Claims (1)
JP 2015-183159 · Sep 16, 2015 · national
Continuity (2)
Division 15066408 · Mar 10, 2016
Related Publication 20180061654A1 · Mar 1, 2018