Spacer formation on semiconductor device
A method for forming a semiconductor device comprising forming a semiconductor fin on a substrate, forming a first sacrificial gate stack over a first channel region of the fin and forming a second sacrificial gate stack over a second channel region of the fin, forming spacers adjacent to the first sacrificial gate stack and the second sacrificial gate stack, depositing a first liner layer on the spacers, the first sacrificial gate stack and the second sacrificial gate stack, depositing a first sacrificial layer on the first liner layer, removing a portion of the first sacrificial layer over the first gate stack to expose a portion of the first liner layer on the first sacrificial gate stack, and growing a first semiconductor material on exposed portions of the fin to form a first source/drain region adjacent to the first gate sacrificial gate stack.
1. A semiconductor device comprising:
a semiconductor fin arranged on a substrate, wherein the fin includes an n-type field effect transistor (nFET) region and a p-type field effect transistor (pFET) region;
a first gate stack arranged over a first channel region of the fin in the pFET region;
a second gate stack arranged over a second channel region of the fin in the nFET region;
a first spacer having a first thickness arranged adjacent to the first gate stack in the pFET region;
a second spacer having the first thickness arranged adjacent to the second gate stack in the nFET region;
a first source/drain region epitaxially grown on the fin adjacent to the first spacer in the pFET region; and
a second source/drain region epitaxially grown on the fin adjacent to the second spacer in the nFET region.
2. The device of claim 1 , further comprising a layer of nitride material arranged on the substrate between the first source/drain region and the second source/drain region.
3. The device of claim 1 , wherein the first source/drain region includes a crystalline semiconductor material.