Semiconductor device with redistribution layers on partial encapsulation and non-photosensitive passivation layers

1. A semiconductor device, comprising:

an electronic device having a top surface, a bottom surface, and side surfaces between the top and bottom surfaces of the electronic device;

an encapsulant encapsulating the side surfaces of the electronic device;

a contact pad on the top surface of the electronic device; and

a redistribution structure coupled to the contact pad, wherein:

the redistribution structure comprises a linear portion and a bump pad,

a conductive bump on the bump pad comprises a main bump and a protruding part extending toward the linear portion, and

the protruding part is smaller than the main bump.

2. The semiconductor device according to claim 1 , wherein a radius of the protruding part is smaller than a radius of the main bump.

3. The semiconductor device according to claim 2 , wherein the radius of the protruding part is in a horizontal direction and the radius of the main bump is in the horizontal direction.

4. The semiconductor device according to claim 2 , wherein the radius of the protruding part is in a vertical direction and the radius of the main bump is in the vertical direction.

5. The semiconductor device according to claim 1 , wherein the bottom surface of the electronic device is coplanar with a bottom surface of the encapsulant.

6. A semiconductor device, comprising:

an electronic device having a top surface, a bottom surface, and side surfaces between the top and bottom surfaces of the electronic device;

a non-photosensitive protection layer covering a portion of the top surface of the electronic device;

a contact pad on the top surface of the electronic device;

a redistribution structure on the non-photosensitive protection layer and the contact pad, the redistribution structure comprising a linear portion and a bump pad; and

a conductive bump on the bump pad comprising a main bump and a protruding part extending toward the linear portion, wherein the protruding part is smaller than the main bump.

7. The semiconductor device according to claim 6 , wherein a radius of the protruding part is smaller than a radius of the conductive bump.

8. The semiconductor device according to claim 7 , wherein the radius of the protruding part is in a horizontal direction and the radius of the main bump is in the horizontal direction.

9. The semiconductor device according to claim 7 , wherein the radius of the protruding part is in a vertical direction and the radius of the main bump is in the vertical direction.

10. A semiconductor device, comprising:

an electronic device having a first surface, a second surface opposite to the first surface, and side surfaces between the first and second surfaces;

an insulating structure covering a portion of the first surface of the electronic device; and

a redistribution structure on the insulating structure and electrically coupled to the electronic device,

wherein:

the redistribution structure comprises a linear portion and a bump pad; and

a conductive bump on the bump pad comprises a main bump and a protruding part extending toward the linear portion, wherein the protruding part is smaller than the main bump.

11. The semiconductor device according to claim 10 , wherein a radius of the protruding part is smaller than a radius of the main bump.

12. The semiconductor device according to claim 11 , wherein the radius of the protruding part is in a horizontal direction and the radius of the main bump is in the horizontal direction.

13. The semiconductor device according to claim 11 , wherein the radius of the protruding part is in a vertical direction and the radius of the main bump is in the vertical direction.

14. The semiconductor device according to claim 10 , comprising a first encapsulant encapsulating the side surfaces, wherein:

a through via extends from the redistribution structure through the insulating structure and the first encapsulant, and

a bottom-most surface of conductive material in the through via is higher than the second surface of the electronic device.

15. The semiconductor device according to claim 10 , wherein the bump pad is on the insulating structure.

16. A method for electronic device packaging, comprising:

providing an electronic device, wherein:

the electronic device has a first surface, a second surface opposite to the first surface, and side surfaces between the first and second surfaces, and

an insulating structure is on the first surface of the electronic device;

forming a redistribution structure on the insulating structure, wherein:

the redistribution structure comprises a linear portion and a bump pad, and

the redistribution structure is electrically coupled to the electronic device; and

forming a conductive bump on the bump pad, wherein:

the conductive bump comprises a main bump and a protruding part extending toward the linear portion, and

the protruding part is smaller than the main bump.

17. The method according to claim 16 , wherein a radius of the protruding part is smaller than a radius of the main bump.

18. The method according to claim 17 , wherein the radius of the protruding part is in a horizontal direction and the radius of the main bump is in the horizontal direction.

19. The method according to claim 17 , wherein the radius of the protruding part is in a vertical direction and the radius of the main bump is in the vertical direction.

20. The method according to claim 16 , comprising:

encapsulating the side surfaces with an encapsulant;

forming a through via to extend from the redistribution structure through the insulating structure and the encapsulant; and

forming a connection member in the through via, wherein a bottom-most surface of the connection member is higher than the second surface of the electronic device.