Group III-V device structure with variable impurity concentration
A semiconductor structure includes a substrate, a transition body over the substrate, a group III-V intermediate body having a bottom surface over the transition body and a group III-V device layer over a top surface of the group III-V intermediate body. The group III-V intermediate body has a first impurity concentration at the bottom surface, a second impurity concentration at the top surface, and a variable impurity concentration that rises and falls between the bottom surface and the top surface. The first impurity concentration is greater than the second impurity concentration.
1. A semiconductor structure, comprising:
a substrate;
a transition body over the substrate;
a group III-V intermediate body having a bottom surface over the transition body; and
a group III-V device layer over a top surface of the group III-V intermediate body,
wherein the group III-V intermediate body has a first impurity concentration at the bottom surface, a second impurity concentration at the top surface, and a variable impurity concentration that rises and falls between the bottom surface and the top surface,
wherein the first impurity concentration is greater than the second impurity concentration.
2. The semiconductor structure of claim 1 , wherein an impurity producing the first impurity concentration at the bottom surface, the second impurity concentration at the top surface and the variable impurity concentration is a P type impurity.
3. The semiconductor structure of claim 1 , wherein the variable impurity concentration is a variable carbon concentration.
4. The semiconductor structure of claim 1 , wherein the variable impurity concentration includes a plurality of impurity species.
5. The semiconductor structure of claim 1 , wherein the group III-V intermediate body comprises a compositionally graded III-Nitride body having a first III-Nitride composition at the bottom surface and a second III-Nitride composition above the bottom surface.
6. The semiconductor structure of claim 1 , wherein the transition body includes a group III-V transition structure having a selectively modified impurity concentration such that a bottom surface impurity concentration of the group III-V transition structure is selectively modified to a top surface impurity concentration of the group III-V transition structure.
7. The semiconductor structure of claim 6 , wherein the selectively modified impurity concentration is modified in a step-wise fashion from the bottom surface impurity concentration to the top surface impurity concentration.
8. The semiconductor structure of claim 6 , wherein the selectively modified impurity concentration rises and falls between the bottom surface impurity concentration and the top surface impurity concentration.
9. A method, comprising:
fabricating a transition body over a substrate;
fabricating a group III-V intermediate body having a bottom surface over the transition body; and
fabricating a group III-V device layer over a top surface of the group III-V intermediate body,
wherein fabricating the group III-V intermediate body comprises providing a first impurity concentration at the bottom surface, a second impurity concentration at the top surface, and a variable impurity concentration that rises and falls between the bottom surface and the top surface, the first impurity concentration being greater than the second impurity concentration.
10. The method of claim 9 , wherein an impurity producing the first impurity concentration at the bottom surface, the second impurity concentration at the top surface and the variable impurity concentration is a P type impurity.
11. The method of claim 9 , wherein the variable impurity concentration is a variable carbon concentration.
12. The method of claim 9 , wherein the variable impurity concentration includes a plurality of impurity species.
13. The method of claim 9 , wherein the group III-V intermediate body comprises a compositionally graded III-Nitride body having a first III-Nitride composition at the bottom surface and a second III-Nitride composition above the bottom surface.
14. The method of claim 9 , wherein fabricating the transition body comprises fabricating a group III-V transition structure having a selectively modified impurity concentration such that a bottom surface impurity concentration of the group IH-V transition structure is selectively modified to a top surface impurity concentration of the group III-V transition structure.
15. The method of claim 14 , wherein the selectively modified impurity concentration is reduced in a step-wise fashion from the bottom surface impurity concentration to the top surface impurity concentration.
16. The method of claim 14 , wherein the selectively modified impurity concentration rises and falls between the bottom surface impurity concentration and the top surface impurity concentration.
17. A semiconductor structure, comprising:
a substrate;
a transition body over the substrate;
a group III-V intermediate body having a bottom surface over the transition body; and
a group III-V device layer over a top surface of the group III-V intermediate body,
wherein the group III-V intermediate body comprises a variable impurity concentration that rises and falls a plurality of times between the bottom surface and the top surface.
18. The semiconductor structure of claim 17 , wherein an impurity producing the variable impurity concentration is a P type impurity.
19. The semiconductor structure of claim 17 , wherein the variable impurity concentration is a variable carbon concentration.
20. The semiconductor structure of claim 17 , wherein the variable impurity concentration includes a plurality of impurity species.