IP Library › Granted Patent US 10,355,193
Granted Patent B2
US 10,355,193 · App. 15/823,675 · Granted Jul 16, 2019

Flip chip integration on qubit chips

Inventors: Sami Rosenblatt (White Plains, NY); Jason S. Orcutt (Katonah, NY); Martin O. Sandberg (Ossining, NY); Markus Brink (White Plains, NY); Vivekananda P. Adiga (Ossining, NY); Nicholas T. Bronn (Long Island City, NY)
Assignee: International Business Machines Corporation
H01L39/025G06N10/00H01L25/0657H01L25/50H01L39/045H01L39/223H01L39/2493H01L23/544H01L27/18H01L2223/54426H01L2225/06513H01L2225/06541
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Quick Facts
Patent No.
US 10,355,193
App. No.
15/823,675
Granted
Jul 16, 2019
Kind
B2
Abstract

A quantum bit (qubit) flip chip assembly may be formed when a qubit it formed on a first chip and an optically transmissive path is formed on a second chip. The two chips may be bonded using solder bumps. The optically transmissive path may provide optical access to the qubit on the first chip.

Claims (27)

1. A method for forming a quantum bit (qubit) flip-chip assembly, the method comprising:

forming a qubit on a first chip;

forming an optically transmissive path in a second chip; and

bonding the first chip to the second chip; and

wherein the optically transmissive path is located above the qubit.

2. The method of claim 1 , wherein the path has an aperture with a diameter large enough to allow for treatment of the qubit.

3. The method of claim 1 , wherein the optically transmissive path has an aperture of 100 microns or less.

4. The method of claim 1 , further comprising laser annealing the qubit by applying a laser through a surface of the qubit chip that is opposite the second chip.

5. The method of claim 1 , further comprising ion etching the qubit.

6. The method of claim 1 , wherein the forming the optically transmissive path comprises drilling, using a high-power laser beam, the second chip to form a through-hole in the second chip.

7. The method of claim 6 , wherein the etching comprises deep-reactive ion etching.

8. The method of claim 6 , wherein the etching comprises a chemical etch, and wherein the chemical etch is a tetramethylammonium hydroxide (TMAH) etch.

9. The method of claim 1 , wherein the forming the optically transmissive path comprises etching a through-hole in the second chip.

10. The method of claim 1 , wherein the second chip comprises a transparent substrate.

11. The method of claim 10 , wherein the transparent substrate is Magnesiumoxide (MgO).

12. A flip chip apparatus comprising:

a first chip comprising a qubit;

a second chip bonded to the first chip, wherein the first chip and the second chip are bonded by a plurality of solder bumps; and

wherein an optically transmissive path in the second chip provides for optical access to the qubit on the first chip.

13. The apparatus of claim 12 , wherein the second chip comprises a transparent substrate.

14. The apparatus of claim 13 , wherein the transparent substrate is sapphire.

15. The apparatus of claim 12 , wherein the optically transmissive path has a diameter large enough to allow for treatment of one or more of the plurality of qubits.

16. The apparatus of claim 12 , wherein the qubit is accessible for laser annealing via the optically transmissive path.

17. The apparatus of claim 12 , wherein the optically transmissive path of the second chip is aligned with the qubit on the first chip.

18. The apparatus of claim 12 , wherein the optically transmissive path is formed with a chemical etch.

19. The apparatus of claim 12 , wherein the optically transmissive path is formed using a high-power laser beam.

20. The apparatus of claim 12 , wherein the first chip is comprised of a transparent substrate.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Nov 28, 2017
From: ROSENBLATT, SAMI; ORCUTT, JASON S.; SANDBERG, MARTIN O.; BRINK, MARKUS; ADIGA, VIVEKANANDA P.; BRONN, NICHOLAS T.
To: INTERNATIONAL BUSINESS MACHINES CORPORATION
Reel/Frame 044231/0531 →
Continuity (1)
Related Publication 20190165238A1 · May 30, 2019
Cited By (7)
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