Back-side friction reduction of a substrate
A processing chamber system includes a substrate mounting module configured to secure a substrate within a first processing chamber. The system also includes a first deposition module configured to apply a light-sensitive film to a front side surface of the substrate, and a second deposition module configured to apply a film layer to a backside surface of the substrate. The front side surface is opposite to the backside surface of the substrate. A substrate has a bare backside surface with a first coefficient of friction. A film layer is formed onto the backside surface of the substrate. The film layer formed on the backside surface of the substrate has a second coefficient of friction. The second coefficient of friction is lower than the first coefficient of friction.
1. A method of treating a substrate, the method comprising:
receiving the substrate into a substrate processing chamber, the substrate having a front side surface and a backside surface opposite to the front side surface;
forming a flourochemical film layer on the backside surface of the substrate based, at least in part, on exposing the backside surface to a fluorine-containing liquid or gas, and exposing the front side surface to a gas maintained at a higher pressure than the fluorine-containing gas or liquid, the backside surface of the substrate has a first coefficient of friction prior to forming the film layer, the film layer formed on the backside surface of the substrate has a second coefficient of friction, the second coefficient of friction is lower than the first coefficient of friction,
forming a photoresist layer on the front side surface,
wherein developing the photoresist layer subsequent to exposure of the photoresist layer to a pattern of actinic radiation,
wherein the film layer on the backside surface of the substrate is formed prior to the exposure of the photoresist layer to the pattern of actinic radiation, and
wherein the flourochemical layer is entirely made of perfluorodecylmonochlorodimethylsilane, perfluorocthylmonochlorodimethylsilane, perfluorobuthylmonochlorodimethylsilane, perfluorodecylethoxydimethylsilane, perfluoroooctylmethoxydimethylsilane, or perfluorodecylmethoxydimethylsilane.
2. The method of claim 1 , wherein the forming a film layer comprises molecular vapor deposition or molecular liquid deposition.
3. The method of claim 1 , further comprising removing a film layer, wherein the removing the film layer comprises one of exposing the film layer to an oxygen-containing gas, exposing the film layer to an oxygen-containing plasma, or exposing the film layer to a combination of an oxygen-containing gas and ultra-violet light.
4. The method of claim 1 , further comprising:
exposing the backside surface to a chemistry treatment prior to the forming a film layer on the backside surface, wherein the chemistry treatment includes one of water, monoatomic oxygen, diatomic oxygen, or triatomic oxygen.
5. The method of claim 1 , further comprising:
securing the substrate to a substrate chuck after forming the film layer onto the backside surface of the substrate, wherein a first measured coefficient of friction of the substrate prior to forming the film layer on the backside surface is greater than a second measured coefficient of friction of the substrate after the film layer is formed on the backside surface.
6. The method of claim 5 , wherein a first bowing of the substrate having the film layer adhered to the backside surface of the substrate is less than a second bowing of the substrate without the film layer adhered to the backside surface when the substrate is secured to a chuck during the first bowing and the second bowing.
7. The method of claim 5 , wherein a first distortion of the substrate having the film layer adhered to the backside surface of the substrate is less than a second distortion of the substrate without the film layer adhered to the backside surface when the substrate is secured to a chuck during the first distortion and the second distortion.