Self-moiré target design principles for measuring unresolved device-like pitches
Metrology targets and methods are provided, which provide self-Moiré measurements of unresolved target features, i.e., interaction of electromagnetic fields re-scattered off elements within a single target layer provides signals with Moiré pitches that are measurable, although the actual target pitches are unresolved and possibly device-like. Targets comprise cell(s) with interlaced lines of elements having different device-like pitches which are selected to yield resolved Moiré pitch(es). Different target designs are presented for scatterometry and imaging metrology measurements, as well as for critical dimension, dose and focus, and pitch walk measurements—of device-like targets.
1. A metrology target comprising at least one cell comprising interlaced lines of elements, the interlaced lines having at least two different device-like pitches, p1 and p2, selected to yield at least one resolved Moiré pitch p=p1·p2/(p1−p2), with p1, p2≤100 nm and p>400 nm, wherein the metrology target further comprises at least two layers, one above another, one having p1, p2≤100 nm, p=p1·p2/(p1−p2)>400 nm and another one having a periodic structure with the resolved Moiré pitch p.
2. The metrology target of claim 1 , wherein the interlaced lines are alternating lines.
3. The metrology target of claim 1 , wherein the interlaced lines are designed to yield a single compound line.
4. The metrology target of claim 1 , wherein the interlaced lines are produced sequentially.
5. A target design file of the target of claim 1 .
6. A metrology target comprising at least two cells comprising interlaced lines of elements, the interlaced lines both having at least two different device-like pitches, p1 and p2, selected to yield at least one resolved Moiré pitch pA=p1·p2/(p1−p2), with p1, p2≤100 nm and pA>400 nm, wherein the two cells are side by side, and wherein at least some of the elements are mirrored in one of the cells with respect to the other of the cells.
7. The metrology target of claim 6 , wherein the interlaced lines are alternating lines.
8. The metrology target of claim 6 , wherein the interlaced lines are designed to yield a single compound line.
9. The metrology target of claim 6 , wherein the interlaced lines are produced sequentially.
10. A target design file of the target of claim 6 .
11. A metrology target comprising at least two cells comprising interlaced lines of elements, the interlaced lines having at least two different device-like pitches, p1 and p2, selected to yield at least one resolved Moiré pitch p=p1·p2/(p1−p2), with p1, p2≤100 nm and p>400 nm, wherein one of the interlaced lines in one of the cells comprises elements produced in consecutive steps.
12. The metrology target of claim 11 , wherein the interlaced lines are alternating lines.
13. The metrology target of claim 11 , wherein the interlaced lines are designed to yield a single compound line.
14. A target design file of the target of claim 11 .