Stress retention in fins of fin field-effect transistors
View Patent ↗Embodiments of the present invention provide a structure and method of minimizing stress relaxation during fin formation. Embodiments may involve forming a looped spacer on an upper surface of a substrate and adjacent to at least a sidewall of a mandrel. The mandrel may be removed, leaving the looped spacer on the substrate. An exposed portion of the substrate may be removed to form a looped fin below the looped spacer. The spacer may be removed, leaving a looped fin. A looped fin formation may reduce stress relaxation compared to conventional fin formation methods. Embodiments may include forming a gate over a looped portion of a looped fin. Securing a looped portion in position with a gate may decrease stress relaxation in the fin. Thus, a looped fin with a looped portion of the looped fin under a gate may have substantially reduced stress relaxation compared to a conventional fin.
1. A method of forming fin field-effect transistor with a fin comprising:
forming first and second spacers around a first mandrel and a second mandrel, respectively, on an upper surface of a substrate, wherein the first spacer is adjacent to a first sidewall of the first mandrel and the second spacer is adjacent to a first sidewall of the second mandrel, wherein the first sidewall of the first mandrel extends in a first direction and a second sidewall of the first mandrel extends in a second direction;
removing the first mandrel and the second mandrel;
removing an exposed portion of the substrate, wherein the removing the exposed portion of the substrate forms a first fin underneath the first spacer and a second fin below the second spacer, wherein the first fin and the second fin each comprise a first portion extending in the first direction, and wherein the first fin comprises a second portion extending in the second direction and a third portion extending in the first direction, wherein the second portion connects the first portion of the first fin to the third portion of the first fin, and wherein the first fin and the second fin are not contiguous;
removing the spacer; and
forming a gate extending in the second direction on the second portion of the first fin and the second fin, wherein the gate maintains a compressive stress of the second portion of the first fin;
removing a portion of the second fin; and
depositing a confining layer abutting the second fin, wherein the confining layer maintains a compressive stress of the second fin.
2. The method of claim 1 , wherein the confining layer is parallel to at least a portion of the first fin.
3. A method of forming fin field-effect transistor with a fin comprising:
forming a first fin from an upper surface of a substrate, wherein the first fin comprises a first portion extending in a first direction and a second portion extending in a second direction and a third portion extending in the first direction, wherein the second portion connects the first portion of the first fin to the third portion of the first fin;
forming a second fin from the upper surface of the substrate, wherein the second fin comprises a first portion extending in the first direction, wherein the first fin and the second fin are not contiguous;
forming a gate extending in the second direction over the second portion of the first fin and the second fin, wherein at least a portion of the second portion of the fin is under the gate, and wherein the gate maintains a compressive stress of the second portion of the first fin;
removing a portion of the second fin; and
depositing a confining layer abutting the second fin, wherein the confining layer maintains a compressive stress of the second fin.
4. The method of claim 3 , wherein the confining layer is parallel to at least a portion of the first fin.
5. The method of claim 3 , further comprising:
forming another gate on the upper surface of the substrate and the first fin.
6. The method of claim 3 , wherein the confining layer is perpendicular to the second fin, wherein the second fin comprises one or more free surfaces.