Bonded semiconductor structures
View Patent ↗A method is disclosed that includes operations as follows. With an ion-implanted layer which is disposed between an epitaxial layer and a first semiconductor substrate, the epitaxial layer is bonded directly to a second semiconductor substrate. The ion-implanted layer is split to separate the first semiconductor substrate from the epitaxial layer completely.
1. A method, comprising:
after forming an ion-implanted layer which is in contact with and disposed between an epitaxial layer and a first semiconductor substrate, without forming any layer on the epitaxial layer, bonding the epitaxial layer to a second semiconductor substrate; and
splitting the ion-implanted layer to separate the first semiconductor substrate with a portion of the ion-implanted layer from a remaining portion of the ion-implanted layer with the epitaxial layer completely.
2. The method of claim 1 , wherein the second semiconductor substrate comprises a semiconductor device portion.
3. The method of claim 2 , further comprising:
capping the semiconductor device portion by a bonding oxide layer.
4. The method of claim 1 , further comprising:
forming a first semiconductor device portion on the epitaxial layer.
5. The method of claim 4 , further comprising:
forming at least one via through the first semiconductor device portion, the epitaxial layer, and a bonding oxide layer, for connecting the first semiconductor device portion to a second semiconductor device portion of the second semiconductor substrate.
6. The method of claim 5 , wherein a diameter of the at least one via is less than 4 micrometers.
7. The method of claim 5 , further comprising:
forming an interconnect layer on the first semiconductor device portion.
8. The method of claim 1 , further comprising:
polishing the epitaxial layer after splitting the ion-implanted layer to separate the first semiconductor substrate from the epitaxial layer completely.
9. The method of claim 1 ,
wherein the epitaxial layer is bonded to a bonding oxide layer of the second semiconductor substrate.
10. The method of claim 1 , further comprising:
implanting at least one implant species between the epitaxial layer and the first semiconductor substrate to form the ion-implanted layer.
11. The method of claim 1 , wherein the epitaxial layer comprises Ge, InP, GaAs, or the combination thereof.
12. The method of claim 1 , wherein a thickness of the epitaxial layer is in a range of about 1-10 micrometers.
13. A method, comprising:
after forming an ion-implanted layer which is in contact with and disposed between an epitaxial layer and a first semiconductor substrate, bonding the epitaxial layer to a bonding oxide layer of a second semiconductor substrate without forming any layer on the epitaxial layer such that the epitaxial layer is in contact with the bonding oxide layer of the second semiconductor substrate;
splitting the ion-implanted layer to remove the first semiconductor substrate together with a portion of the ion-implanted layer, with the epitaxial layer being remained; and
forming a first semiconductor device portion on the remained epitaxial layer, and an interconnect layer on the first semiconductor device portion.
14. The method of claim 13 , wherein the epitaxial layer comprises Ge, InP, GaAs, or the combination thereof.
15. The method of claim 13 ,
wherein the remained epitaxial layer is bonded to the bonding oxide layer of the second semiconductor substrate.
16. The method of claim 13 , further comprising:
polishing the remained epitaxial layer after splitting the ion-implanted layer to remove the first semiconductor substrate together with the portion of the ion-implanted layer.
17. The method of claim 13 , further comprising:
implanting at least one implant species between the epitaxial layer and the first semiconductor substrate to form the ion-implanted layer.
18. A method, comprising:
after forming an ion-implanted layer which is in contact with and disposed between an epitaxial layer and a first semiconductor substrate, without forming any layer on the epitaxial layer, bonding the epitaxial layer to a bonding oxide layer of a second semiconductor substrate such that the epitaxial layer is in contact with the bonding oxide layer of the second semiconductor substrate;
splitting the ion-implanted layer to remove the first semiconductor substrate together with a portion of the ion-implanted layer, with the epitaxial layer being remained;
forming a first semiconductor device portion on the remained epitaxial layer;
forming vias through the first semiconductor device portion and the epitaxial layer; and
forming an interconnect layer on the first semiconductor device portion.
19. The method of claim 18 , wherein the epitaxial layer comprises Ge, InP, GaAs, or the combination thereof.
20. The method of claim 18 , wherein the epitaxial layer is bonded to the bonding oxide layer of the second semiconductor substrate through an oxide layer introduced from the epitaxial layer.