Flip-chip light emitting diode and fabrication method
A flip-chip light-emitting diode structure includes a substrate; an epitaxial layer over the substrate, which includes a first semiconductor layer, a light-emitting layer, and a second semiconductor layer; a first electrode structure over the first semiconductor layer; a second electrode structure over the second semiconductor layer; wherein, the first electrode structure includes a first electrode body and a first electrode ring; the second electrode structure includes a second electrode body and a second electrode ring; the thickness of the first electrode ring is greater than or equal to that of the first electrode body and the thickness of the second electrode ring is greater than or equal to that of the second electrode body. As barrier structures, the first and the second electrode rings are used for avoiding short circuit during packaging and usage of the light-emitting diode due to overflow of solid crystal conductive materials, thus improving reliability.
1. A flip-chip light-emitting diode, comprising:
an epitaxial structure, which comprises: a first semiconductor layer, a second semiconductor layer and a light-emitting layer between the first semiconductor layer and the second semiconductor layer;
a first electrode structure over the first semiconductor layer;
a second electrode structure over the second semiconductor layer;
wherein: the first electrode structure comprises a first electrode body and a first electrode ring; the second electrode structure comprises a second electrode body and a second electrode ring; a thickness of the first electrode ring is greater than or equal to a thickness of the first electrode body; and a thickness of the second electrode ring is greater than or equal to a thickness of the second electrode body.
2. The flip-chip light-emitting diode of claim 1 , wherein, the first electrode ring encircles the first electrode body and is spaced from the first electrode body; and the second electrode ring encircles the second electrode body and is spaced from the second electrode body.
3. The flip-chip light-emitting diode of claim 1 , wherein, each of the first electrode ring and the second electrode ring has at least one circle.
4. The flip-chip light-emitting diode of claim 3 , wherein, the inner first electrode ring and the outer first electrode ring are of the same thickness, and the inner second electrode ring and outer second electrode ring are of the same thickness.
5. The flip-chip light-emitting diode of claim 3 , wherein, the thickness of the inner first electrode ring is smaller than the thickness of the outer first electrode ring; the thickness of the inner second electrode ring is smaller than the thickness of the outer second electrode ring; the thickness of the inner first electrode ring is equal to the thickness of the first electrode body; and the thickness of the inner second electrode ring is equal to the thickness of the second electrode body.
6. The flip-chip light-emitting diode of claim 3 , wherein, the thickness of the first electrode body, the thickness of the inner first electrode ring and the thickness of the outer first electrode ring increases gradually; and the thickness of the first electrode body, the thickness of the inner second electrode ring and the thickness of the outer second electrode ring also increases gradually.
7. The flip-chip light-emitting diode of claim 1 , wherein, as barrier structures, the first electrode ring and the second electrode ring are used for avoiding short circuit during packaging and usage of the light-emitting diode due to overflow of solid crystal conductive materials, thus improving the reliability of the light-emitting diode.
8. The flip-chip light-emitting diode of claim 1 , wherein, the thickness of the first electrode body is equal to the thickness of the second electrode body for facilitating electrode fabrication.
9. The flip-chip light-emitting diode of claim 1 , wherein, the thickness of the first electrode ring is equal to the thickness of the first electrode body, and the thickness of the second electrode ring is also equal to the thickness of the second electrode body.
10. The flip-chip light-emitting diode of claim 1 , wherein, the first electrode ring adjoins to the first electrode body with no space between them, and the thickness of the first electrode ring is more than a double of the thickness of the first electrode body; the second electrode ring adjoins to the second electrode body with no space between them, and the thickness of the second electrode ring is more than a double of the thickness of the second electrode body.
11. The flip-chip light-emitting diode of claim 1 , wherein, the flip-chip light-emitting diode structure may also comprise a reflective layer or a conductive layer over the epitaxial layer before the first and the second electrode structures are formed.
12. A fabrication method for a flip-chip light-emitting diode structure, comprising:
1) providing an epitaxial structure which comprises: a first semiconductor layer, a second semiconductor layer and a light-emitting layer between the first semiconductor layer and the second semiconductor layer;
2) fabricating a first electrode structure over the first semiconductor layer; wherein, the first electrode structure comprises a first electrode body and a first electrode ring, and a thickness of the first electrode ring is greater than or equal to a thickness of the first electrode body;
3) fabricating a second electrode structure over the second semiconductor layer; wherein, the second electrode structure comprises a second electrode body and a second electrode ring, and a thickness of the second electrode ring is greater than or equal to a thickness of the second electrode body.
13. The fabrication method of claim 12 , wherein, the first electrode ring encircles the first electrode body and is spaced from the first electrode body; and the second electrode ring encircles the second electrode body and is spaced from the second electrode body.
14. The fabrication method of claim 12 , wherein, each of the first electrode ring and the second electrode ring has at least one circle.
15. The fabrication method of claim 12 , wherein, the thickness of the inner first electrode ring is smaller than the thickness of the outer first electrode ring; the thickness of the inner second electrode ring is smaller than the thickness of the outer second electrode ring; the thickness of the inner first electrode ring is equal to the thickness of the first electrode body; and the thickness of the inner second electrode ring is equal to the thickness of the second electrode body.
16. The fabrication method of claim 12 , wherein, the thickness of the first electrode body, the thickness of the inner first electrode ring and the thickness of the outer first electrode ring increases gradually; and the thickness of the first electrode body, the thickness of the inner second electrode ring and the thickness of the outer second electrode ring also increases gradually.
17. The fabrication method of claim 12 , wherein, as barrier structures, the first electrode ring and the second electrode ring are used for avoiding short circuit during packaging and usage of the light-emitting diode due to overflow of solid crystal conductive materials, thus improving the reliability of the flip-chip light-emitting diode.
18. The fabrication method of claim 12 , wherein, the fabrication method may also comprise the fabrication of a reflective layer or a conductive layer over the epitaxial layer before the first and the second electrode structures are fabricated.
19. The fabrication method of claim 12 , wherein, the thickness of the first electrode ring is equal to the thickness of the first electrode body, and the thickness of the second electrode ring is also equal to the thickness of the second electrode body.
20. The fabrication method of claim 12 , wherein, the first electrode ring adjoins to the first electrode body with no space between them, and the thickness of the first electrode ring is more than a double of the thickness of the first electrode body; the second electrode ring adjoins to the second electrode body with no space between them, and the thickness of the second electrode ring is more than a double of the thickness of the second electrode body.