Multi-zone gas distribution systems and methods
The present technology includes improved gas distribution designs for forming uniform plasmas during semiconductor processing operations or for treating the interior of semiconductor processing chambers. While conventional gas distribution assemblies may receive a specific reactant or reactant ratio which is then distributed into the plasma region, the presently described technology allows for improved control of the reactant input distribution. The technology allows for separate flows of reactants to different regions of the plasma to offset any irregularities observed in process uniformity. A first precursor may be delivered to the center of the plasma above the center of the substrate/pedestal while a second precursor may be delivered to an outer portion of the plasma above an outer portion of the substrate/pedestal. In so doing, a substrate residing on the pedestal may experience a more uniform etch or deposition profile across the entire surface.
1. A substrate processing system comprising:
a zonal distribution manifold having a first manifold channel and a second manifold channel;
a zonal distribution plate affixed to the zonal distribution manifold, wherein the zonal distribution plate has an inner zone channel configured to receive a first gas from the first manifold channel and an outer zone channel configured to receive a second gas from the second manifold channel;
a zonal blocker plate affixed to the zonal distribution plate, wherein the zonal blocker plate has a top inner recess configured to receive the first gas from the inner zone channel and a top outer recess configured to receive the second gas from the outer zone channel, the top inner recess laterally restricted from the top outer recess by a first dividing wall defined by the zonal blocker plate and extending from a surface of the zonal blocker plate towards the zonal distribution plate, wherein the zonal blocker plate further comprises a bottom inner recess fluidly coupled to the top inner recess through an inner showerhead portion and further comprises a bottom outer recess fluidly coupled to the top outer recess through an outer showerhead portion, the bottom inner recess laterally restricted from the bottom outer recess by a second dividing wall; and
a faceplate affixed to the zonal blocker plate having through-holes configured to pass the first gas and the second gas into a plasma region.
2. The substrate processing system of claim 1 , wherein the outer zone channel comprises a groove formed in a top portion of the zonal distribution plate, wherein the zonal distribution plate comprises a plurality of bottom holes evenly arranged along a circle centered around the zonal blocker plate and the groove is configured to receive the second gas from the second manifold channel at a starting point, and wherein a path length from the starting point, along the groove to each of the plurality of bottom holes is the same for each of the plurality of bottom holes.
3. The substrate processing system of claim 2 , wherein the plurality of bottom holes comprises at least eight bottom holes.
4. The substrate processing system of claim 1 , wherein the zonal distribution manifold, the zonal distribution plate and the zonal blocker plate are configured such that the first gas and the second gas do not mix until entering the plasma region.
5. The substrate processing system of claim 1 , further comprising a showerhead parallel to the faceplate, wherein the plasma region is disposed between the faceplate and the showerhead.
6. The substrate processing system of claim 5 , wherein the plasma region abuts each of the faceplate and the showerhead.
7. The substrate processing system of claim 5 , further comprising a substrate processing region bordering the showerhead on the opposite side of the showerhead from the plasma region.
8. The substrate processing system of claim 1 , wherein the plasma region is a local plasma region configured to house a substrate for processing.
9. The substrate processing system of claim 1 , wherein the zonal distribution plate and the zonal blocker plate are shaped like disks and are coaxial.
10. The substrate processing system of claim 1 , wherein the first manifold channel comprises a narrow channel portion and a wide channel portion disposed nearer to the zonal distribution plate, wherein the first manifold channel is configured to allow the first gas to expand and mix before entering the top inner recess, wherein the narrow channel portion has a first diameter and the wide channel portion has a second diameter and the second diameter is larger than the first.
11. The substrate processing system of claim 1 , wherein the zonal distribution plate comprises a plurality of bottom holes arranged evenly along a circle centered around the zonal blocker plate.
12. A substrate processing system comprising:
a distribution manifold defining a first manifold channel and a second manifold channel;
a distribution plate coupled with the distribution manifold, wherein the distribution plate defines a first channel and a second channel fluidly isolated from the first channel;
a faceplate defining through-holes; and
a blocker plate positioned between and in contact with each of the distribution plate and the faceplate, wherein the blocker plate defines an inner recess within the blocker plate and an outer recess within the blocker plate radially outward of and extending about the inner recess, wherein a dividing wall is defined by the blocker plate between the inner recess and the outer recess.
13. The substrate processing system of claim 12 , wherein the blocker plate comprises a single plate.
14. The substrate processing system of claim 12 , wherein the inner recess of the blocker plate is fluidly accessible to the first channel defined by the distribution plate, and wherein the outer recess is fluidly accessible to the second channel defined by the distribution plate.
15. The substrate processing system of claim 12 , wherein the blocker plate is characterized by a first surface adjacent the distribution plate and a second surface opposite the first surface, wherein the second surface is adjacent the faceplate, and wherein the inner recess and the outer recess are defined in the first surface of the blocker plate.
16. The substrate processing system of claim 15 , wherein the inner recess is a first inner recess, wherein the outer recess is a first inner recess, wherein the blocker plate further defines a second inner recess in the second surface of the plate, and wherein the blocker plate further defines a second outer recess in the second surface of the plate.
17. The substrate processing system of claim 16 , wherein the dividing wall is a first dividing wall, and wherein the blocker plate further defines a second dividing wall between the second inner recess and the second outer recess.
18. The substrate processing system of claim 12 , wherein the outer recess of the blocker plate is defined at a radially outer edge by the blocker plate.
19. A substrate processing system comprising:
a distribution manifold defining a first manifold channel and a second manifold channel;
a distribution plate coupled with the distribution manifold, wherein the distribution plate defines a first channel and a second channel fluidly isolated from the first channel;
a faceplate defining through-holes; and
a blocker plate positioned between the distribution plate and the faceplate, wherein the blocker plate is characterized by a first surface adjacent the distribution plate and a second surface opposite the first surface, wherein the blocker plate defines an inner recess within the first surface of the blocker plate and an outer recess within the first surface of the blocker plate radially outward of and extending about the inner recess, wherein a dividing wall is defined by the blocker plate between the inner recess and the outer recess.
20. The substrate processing system of claim 19 , wherein the blocker plate is coupled with the distribution plate and the faceplate at a radially outer edge of the blocker plate.