Circuit board and method for manufacturing the same
A circuit board with a heat-recovery function includes a substrate, a heat-storing device, and a thermoelectric device. The heat-storing device is embedded in the substrate and connected to a processor for performing heat exchange with the processor. The thermoelectric device embedded in the substrate includes a first metal-junction surface and a second metal-junction surface. The first metal-junction surface is connected to the heat-storing device for performing heat exchange with the heat-storing device. The second metal-junction surface is joined with the first metal-junction surface, in which the thermoelectric device generates an electric potential by a temperature difference between the first metal-junction surface and the second metal-junction surface.
1. A method for manufacturing a circuit board, comprising:
forming a first opening in a first buildup-dielectric layer and disposing a heat-storing device into the first opening for embedding the heat-storing device in the first buildup-dielectric layer;
disposing a first pattern-metal layer on the first buildup-dielectric layer and the heat-storing device;
disposing a second buildup-dielectric layer on the first buildup-dielectric layer and the first pattern-metal layer, wherein the second buildup-dielectric layer comprises a second opening communicating to the first opening;
disposing an interposer board on the heat-storing device and in the second opening, and disposing a second pattern-metal layer on the second buildup-dielectric layer and the interposer board; and
forming a third opening at the first buildup-dielectric layer or the second buildup-dielectric layer, and disposing a thermoelectric device into the third opening for embedding the thermoelectric device in the first buildup-dielectric layer or the second buildup-dielectric layer, wherein the thermoelectric device is connected to the heat-storing device through the first pattern-metal layer.
2. The method of claim 1 , wherein the second opening is formed after forming the first opening.
3. The method of claim 2 , wherein the second opening has a width greater than that of the first opening.
4. The method of claim 1 , wherein the first and second buildup-dielectric layers are arranged along a vertical direction, and the heat-storing device and the interposer board are arranged along the vertical direction.
5. The method of claim 1 , further comprising:
disposing a heat-conducting unit in contact with the first pattern-metal layer, wherein the heat-conducting unit is made of metal, graphene, or a combination thereof.
6. The method of claim 1 , further comprising:
disposing at least one solder ball between the heat-storing device and the interposer board, wherein the heat-storing device is in a portion lower than the solder ball, and the thermoelectric device is in a portion higher than the solder ball.
7. The method of claim 6 , wherein the interposer board is in a portion higher than the solder ball, and the interposer board and the thermoelectric device are separated from each other by a portion of the second buildup-dielectric layer.
8. The method of claim 7 , further comprising:
disposing a heat-conducting unit in contact with the first pattern-metal layer, wherein the heat-conducting unit is made of metal, graphene, or a combination thereof, and the portion of the second buildup-dielectric layer is above and in contact with the heat-conducting unit.