Solid-state imaging device and electronic apparatus
A solid-state imaging device includes a semiconductor layer on which a plurality of pixels are arranged along a light-receiving surface being a main surface of the semiconductor layer, photoelectric conversion units provided for the respective pixels in the semiconductor layer, and a trench element isolation area formed by providing an insulating layer in a trench pattern formed on a light-receiving surface side of the semiconductor layer, the trench element isolation area being provided at a position displaced from a pixel boundary between the pixels.
1. A solid-state imaging device, comprising:
a semiconductor layer on which a plurality of pixels are arranged along a light-receiving surface, wherein the light-receiving surface is a main surface of the semiconductor layer;
a plurality of photoelectric conversion units, wherein each of the plurality of photoelectric conversion units is provided for a respective pixel of the plurality of pixels on the semiconductor layer; and
a trench element isolation area formed by providing an insulating layer in a trench pattern formed in a light-receiving surface side of the semiconductor layer,
wherein a first portion of the trench element isolation area extends between a first and a second pixel of the plurality of pixels, wherein the first portion is displaced in a first direction from a pixel boundary between the first and second pixels, wherein the first direction is based a wavelength of light received by each of the first and second pixels,
wherein a second portion of the trench element isolation area extends between a third and a fourth pixel of the plurality of pixels, wherein the second portion is displaced in a second direction from a second pixel boundary between the third and fourth pixels, wherein the first portion and the second portion extend an entire width of the trench element isolation area in a cross-sectional view, and wherein the first direction is opposite the second direction in the cross-sectional view.
2. The solid-state imaging device according to claim 1 , wherein
the second direction depends on a wavelength of light to be received by each of the third pixel and the fourth pixel.
3. The solid-state imaging device according to claim 1 , further comprising
a light-shielding film provided on an upper side of the light-receiving surface of the semiconductor layer, the light-shielding film having an opening on an upper side of the photoelectric conversion units, the light-shielding film being pattern-formed to have a line width with the pixel boundary being a center.
4. The solid-state imaging device according to claim 3 , wherein
the trench element isolation area is covered by the light-shielding film.
5. The solid-state imaging device according to claim 1 , further comprising
a color filter of each color provided on an upper side of the light-receiving surface of the semiconductor layer, the color filter being pattern-formed so that a center of the color filter corresponds to a center of the respective pixel.
6. The solid-state imaging device according to claim 1 , further comprising
an on-chip lens provided on an upper side of the light-receiving surface of the semiconductor layer, the on-chip lens being pattern formed so that a center of the on-chip lens corresponds to a center of the respective pixel.
7. The solid-state imaging device according to claim 1 , wherein
the second direction is toward one pixel of the third and fourth pixels, the one pixel detecting light of a longer wavelength.
8. The solid-state imaging device according to claim 3 , wherein
the light-shielding film is embedded in a center of the trench pattern of the trench element isolation area.
9. The solid-state imaging device according to claim 1 , wherein
the trench element isolation area is formed to have a line width in a stepwise manner, the line width being increased on a side of the light-receiving surface.
10. The solid-state imaging device according to claim 1 , wherein
the second direction is toward one pixel of the third and forth pixels, the one pixel detecting light of a shorter wavelength.
11. The solid-state imaging device according to claim 1 , wherein
the semiconductor layer includes a division area including an impurity area on the pixel boundary, the division area extending from a surface opposite to the light-receiving surface to the trench element isolation area.
12. An electronic apparatus, comprising:
a semiconductor layer on which a plurality of pixels are arranged along a light-receiving surface, wherein the light-receiving surface is a main surface of the semiconductor layer;
a plurality of photoelectric conversion units, wherein each of the plurality of photoelectric conversion units is provided for a respective pixel of the plurality of pixels on the semiconductor layer;
a trench element isolation area formed by providing an insulating layer in a trench pattern formed in a light-receiving surface side of the semiconductor layer,
wherein a first portion of the trench element isolation area extends between a first and a second pixel of the plurality of pixels, wherein the first portion is displaced in a first direction from a pixel boundary between the first and second pixels, wherein the first direction is based a wavelength of light received by each of the first and second pixels,
wherein a second portion of the trench element isolation area extends between a third and a fourth pixel of the plurality of pixels, wherein the second portion is displaced in a second direction from a pixel boundary between the third and fourth pixels, wherein the first portion and the second portion extend an entire width of the trench element isolation area in a cross-sectional view, and wherein the first direction is opposite the second direction in the cross-sectional view; and
an optical system that guides incident light to the photoelectric conversion units.