Semiconductor device and process for fabricating the same
A thin stacked semiconductor device has a plurality of circuits that are laminated and formed sequentially in a specified pattern to form a multilayer wiring part. At the stage for forming the multilayer wiring part, a filling electrode is formed on the semiconductor substrate such that the surface is covered with an insulating film, a post electrode is formed on specified wiring at the multilayer wiring part, a first insulating layer is formed on one surface of the semiconductor substrate, the surface of the first insulating layer is removed by a specified thickness to expose the post electrode, and the other surface of the semiconductor substrate is ground to expose the filling electrode and to form a through-type electrode. A second insulating layer is formed on one surface of the semiconductor substrate while exposing the forward end of the through-type electrode, and bump electrodes are formed on both electrodes.
1. A semiconductor device comprising:
a semiconductor substrate having a first main surface, at which an active element is provided, and a second main surface opposing the first main surface;
an insulating layer that covers the first main surface of the semiconductor substrate and the active element;
a wiring portion that contacts the first main surface via the insulating layer;
a through-type electrode that penetrates through the semiconductor substrate from the first main surface to the second main surface; and
a connecting hole that connects the wiring portion and the through-type electrode, the connecting hole having a diameter that is smaller than a diameter of the through-type electrode.
2. The semiconductor device according to claim 1 , wherein the wiring portion is connected with the active element via another connecting hole.
3. The semiconductor device according to claim 1 , further comprising a multilayer wiring part that covers the insulating layer and the wiring portion, and in which wirings and insulating films are laminated, wherein the active element and the through-type electrode are electrically connected via the multilayer wiring part.
4. The semiconductor device according to claim 1 , further comprising another insulating layer that covers the second main surface of the semiconductor substrate.