Bonding wire for semiconductor device
A bonding wire for a semiconductor device includes a Cu alloy core material and a Pd coating layer on a surface of the Cu alloy core material, and contains Ga and Ge of 0.011 to 1.2% by mass in total, which is able to increase bonding longevity of the ball bonded part in the high-temperature, high-humidity environment, and thus to improve the bonding reliability. The thickness of the Pd coating layer is preferably 0.015 to 0.150 μm. When the bonding wire further contains one or more elements of Ni, Ir, and Pt in an amount, for each element, of 0.011 to 1.2% by mass, it is able to improve the reliability of the ball bonded part in a high-temperature environment at 175° C. or more. When an alloy skin layer containing Au and Pd is further formed on a surface of the Pd coating layer, wedge bondability improves.
1. A bonding wire for a semiconductor device, comprising:
a Cu alloy core material; and
a Pd coating layer formed on a surface of the Cu alloy core material, wherein
the bonding wire contains Ge, and
a concentration of Ge relative to the entire wire is 0.011 to 1.5% by mass.
2. The bonding wire for a semiconductor device according to claim 1 , wherein a thickness of the Pd coating layer is 0.015 to 0.150 μm.
3. The bonding wire for a semiconductor device according to claim 1 , further comprising an alloy skin layer containing Au and Pd on the Pd coating layer.
4. The bonding wire for a semiconductor device according to claim 3 , wherein a thickness of the alloy skin layer containing Au and Pd is 0.0005 to 0.050 μm.
5. The bonding wire for a semiconductor device according to claim 1 , wherein
the bonding wire further contains one or more elements selected from Ni, Ir, and Pt, and
a concentration of each of the elements relative to the entire wire is 0.011 to 1.2% by mass.
6. The bonding wire for a semiconductor device according to claim 1 , wherein
the Cu alloy core material contains Pd, and
a concentration of Pd contained in the Cu alloy core material is 0.05 to 1.2% by mass.
7. The bonding wire for a semiconductor device according to claim 1 , wherein
the bonding wire further contains at least one element selected from B, P, and Mg, and
a concentration of each of the elements relative to the entire wire is 1 to 100 ppm by mass.
8. The bonding wire for a semiconductor device according to claim 1 , in a measurement result when measuring crystal orientations on a surface of the bonding wire, a crystal orientation <111> angled at 15 degrees or less to a longitudinal direction has a proportion of 30 to 100% in terms of areal percentage among crystal orientations in the longitudinal direction of the bonding wire.
9. The bonding wire for a semiconductor device according to claim 1 , wherein Cu is present in an outermost surface of the bonding wire.