Systems and methods utilizing parallel configurations of magnetic memory devices

1. A magnetic storage device, comprising:

a magnetic memory cell, comprising:

two or more magnetic tunnel junctions (MTJs) electrically coupled in parallel, including a first MTJ having a first magnetic characteristic and a first electrical characteristic and a second MTJ has a second magnetic characteristic and a second electrical characteristic, wherein the first magnetic characteristic is distinct from the second magnetic characteristic; and

a bottom electrode and a top electrode, wherein:

the two or more MTJs are arranged in parallel with one another between the top and bottom electrode;

each respective MTJ of the two or more MTJs has a distinct switching current threshold for changing a magnetic state of the MTJ from a first magnetic state to a second magnetic state using a current applied to the respective MTJ; and

a switching current threshold of the first MTJ is distinct from the switching current threshold of the second MTJ and is based at least in part on a difference in composition of the first MTJ and the second MTJ arranged between the top electrode and the bottom electrode;

readout circuitry coupled to the bottom electrode or the top electrode of the magnetic memory cell; and

write circuitry coupled to the bottom electrode or the top electrode of the magnetic memory cell.

2. The magnetic storage device of claim 1 , wherein:

each MTJ of the first MTJ and the second MTJ includes a storage layer;

the first magnetic characteristic of the first MTJ is based on a magnetic anisotropy and an offset field on the storage layer of the first MTJ; and

the second magnetic characteristic of the second MTJ is based on a magnetic anisotropy and an offset field on the storage layer of the second MTJ.

3. The magnetic storage device of claim 1 , wherein:

the first electrical characteristic of the first MTJ is based on a geometric property of the first MTJ and a Resistance-Area product (RA product) of the first MTJ;

the second electrical characteristic of the second MTJ is based on a geometric property of the second MTJ and an RA product of the second MTJ.

4. The magnetic storage device of claim 3 , wherein the geometric property of the first MTJ is distinct from the geometric property of the second MTJ.

5. The magnetic storage device of claim 3 , wherein the geometric property of each MTJ is selected from the group consisting of area, diameter, width, and thickness.

6. The magnetic storage device of claim 1 , wherein the magnetic state of the MTJ is a parallel magnetic state or an anti-parallel magnetic state.

7. The magnetic storage device of claim 1 , wherein each MTJ has a resistance that changes in accordance with a change in the magnetic state of the MTJ.

8. The magnetic storage device of claim 7 , wherein the switching current threshold of a respective MTJ is based on the magnetic state and the resistance of the MTJ.

9. The magnetic storage device of claim 1 , wherein a switching current threshold of the first MTJ is distinct from the switching current threshold of the second MTJ based at least in part on stray fields from a reference layer of the first MTJ.

10. The magnetic storage device of claim 1 , wherein the first MTJ and the second MTJ are each in the first magnetic state, corresponding to a first resistance measured across the magnetic memory cell.

11. The magnetic storage device of claim 10 , wherein the first MTJ is in the second magnetic state and the second MTJ is in the first magnetic state, corresponding to a second resistance measured across the magnetic memory cell, the second resistance distinct from the first resistance.

12. The magnetic storage device of claim 11 , wherein the first MTJ is in the first magnetic state and the second MTJ is in the second magnetic state, corresponding to a third resistance measured across the magnetic memory cell, the third resistance distinct from the first resistance and the second resistance.

13. The magnetic storage device of claim 12 , wherein the first MTJ and the second MTJ are each in the second magnetic state, corresponding to a fourth resistance measured across the magnetic memory cell, the fourth resistance distinct from the first resistance, the second resistance, and the third resistance.

14. The magnetic storage device of claim 1 , wherein the magnetic memory cell further comprises a third MTJ having a third magnetic characteristic that is distinct from the first magnetic characteristic and the second magnetic characteristic and having a third electrical characteristic, wherein the third MTJ is arranged in parallel with the first MTJ and the second MTJ.

15. The magnetic storage device of claim 1 , wherein:

the magnetic memory cell is responsive to a first voltage pulse for writing to the first MTJ; and

the magnetic memory cell is responsive to a second voltage pulse for writing to the second MTJ, the second voltage pulse distinct from the first voltage pulse.

16. The magnetic storage device of claim 1 , wherein the magnetic memory cell is responsive to a single voltage pulse for writing to both the first MTJ and the second MTJ.

17. The magnetic storage device of claim 1 , wherein the magnetic memory cell is responsive to a third voltage pulse for reading a bit from the magnetic memory cell.