IP Library Granted Patent US 10,157,897
Granted Patent B1
US 10,157,897 · App. 15/860,572 · Granted Dec 18, 2018

Hybrid LED and color conversion film displays

Inventors: Marshall Smith (Santa Clara, CA); Khaled Ahmed (Anaheim, CA)
Assignee: Intel Corporation
H01L25/0753H01L27/1214H01L33/007H01L33/0079H01L33/06H01L33/08H01L33/24H01L33/32H01L33/42H01L33/502H01L33/62C09K11/703H01L27/322H01L33/508H01L2933/0016H01L2933/0066H01L2933/0083
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Quick Facts
Patent No.
US 10,157,897
App. No.
15/860,572
Granted
Dec 18, 2018
Kind
B1
Abstract

A display component can include an array of pixels and a color conversion film. Each pixel in the array can include one or more green sub-pixel emitters and a plurality of blue sub-pixel emitters. The color conversion film can be disposed on a subset of the plurality of blue sub-pixel emitters. The color conversion film can be configured to convert blue light from the subset of the plurality of blue sub-pixel emitters to red light to realize a pixel including red, green and blue emitters.

Claims (72)

1. A display component comprising:

an array of pixels, each pixel including;

one or more green sub-pixel emitters;

a plurality of blue sub-pixel emitters; and

a color conversion film disposed on a subset of the plurality of blue sub-pixel emitters, the color conversion film configured to convert blue light from the subset of the plurality of blue sub-pixel emitters to red light.

2. The display component of claim 1 , wherein the one or more green sub-pixel emitters and the plurality of blue sub-pixel emitters comprise a plurality of inorganic Micro Light Emitting Diodes (μLEDs).

3. The display component of claim 1 , wherein the one or more green sub-pixel emitters and the plurality of blue sub-pixel emitters comprise a plurality of Gallium Nitride (GaN) based Micro Light Emitting Diodes (μLEDs).

4. The display component of claim 1 , wherein the one or more green sub-pixel emitters and the plurality of blue sub-pixel emitters comprise nanopyramid Light Emitting Diodes (LED).

5. The display component of claim 1 , wherein the one or more green sub-pixel emitters and the plurality of blue sub-pixel emitters comprise Electroluminescent Light Emitting Diodes (EL-LED).

6. The display component of claim 1 , wherein the one or more green sub-pixel emitters and the plurality of blue sub-pixel emitters comprises nanowire Light Emitting Diodes (LEDs).

7. The display component of claim 1 , wherein the one or more green sub-pixel emitters and the plurality of blue sub-pixel emitters have a shape selected from a group consisting of a square, a rectangle, a hexagon, and a diamond.

8. The display component of claim 1 , wherein the color conversion film comprises a red quantum dot film.

9. The display component of claim 1 , wherein the one or more green sub-pixel emitter and the plurality of blue sub-pixel emitters are approximately 3-10 micrometers (μm).

10. The display component of claim 1 , wherein the one or more green sub-pixel emitter and the plurality of blue sub-pixel emitters are approximately 4 micrometers (μm).

11. The display component of claim 1 , wherein,

the one or more green sub-pixel emitters have an efficiency of approximately 40 lumens per Watt (lm/W) or greater;

the plurality of blue sub-pixel emitters have an efficiency of approximately 5 lm/W or greater; and

the subset of the plurality of blue sub-pixel emitters overlaid with the color conversion film have an efficiency of approximately 5 lm/W or greater.

12. The display component of claim 1 , wherein each pixel includes:

one green sub-pixel emitter; and

three blue sub-pixel emitters, wherein two blue sub-pixel emitters are overlaid with the color conversion film.

13. The display component of claim 1 , wherein each pixel includes:

one green sub-pixel emitter; and

three blue sub-pixel emitters, wherein two blue sub-pixel emitters are overlaid with the color conversion film.

14. The display component of claim 1 , wherein each pixel includes:

one green sub-pixel emitter; and

three blue sub-pixel emitters, wherein one blue sub-pixel emitter is overlaid with the color conversion film.

15. The display component of claim 1 , wherein each pixel includes:

two green sub-pixel emitter; and

two blue sub-pixel emitters, wherein one blue sub-pixel emitter is overlaid with the color conversion film.

16. The display component of claim 1 , wherein each pixel comprises a monolithic structure of the one or more green sub-pixel emitters and the plurality of blue sub-pixel emitters.

17. A display device comprising:

a backplane including a select drive circuit including an array of anodes;

an array of pixels including;

one or more green sub-pixel emitters coupled to respective one or more anodes of the backplane; and

a plurality of blue sub-pixel emitters coupled to respective ones of a plurality of the anodes of the backplane;

a color conversion film disposed on a subset of the plurality of blue sub-pixel emitters, the color conversion film configured to convert blue light from the subset of the plurality of blue sub-pixel emitters to red light; and

a cathode including a transparent conductive layer disposed over the one or more green sub-pixel emitters and the plurality of blue sub-pixel emitters, and disposed under the color conversion film.

18. The display device of claim 17 , further comprising a protection barrier layer disposed on the array of pixels and color conversion film.

19. The display device of claim 17 , wherein the one or more green sub-pixel emitters and the plurality of blue sub-pixel emitters comprise nanowire Light Emitting Diodes (LEDs).

20. The display device of claim 19 , wherein the nanowire LEDs comprise:

a substrate;

a nucleation layer disposed on the substrate;

a mask layer partially disposed on the nucleation layer;

an n-doped core layer disposed on the nucleation layer in opening in the mask layer;

an active layer disposed on the n-doped core layer; and

a p-doped cladding layer disposed on the active layer.

21. The display device of claim 17 , wherein the color conversion film comprises a red quantum dot film.

22. A method of fabricating a display device comprising:

monolithically forming one or more green sub-pixel emitters and a plurality of blue sub-pixel emitters of a pixel on a substrate;

transferring the pixel from the substrate to a backplane including a select drive circuit, wherein anodes of the one or more green sub-pixel light source and anodes of the plurality of blue sub-pixel emitters are electrically coupled to respective anode contacts of the select drive circuit;

forming a cathode including a transparent conductive layer disposed over the pixels on the backplane; and

forming a color conversion film disposed over a subset of the plurality of blue sub-pixel emitters, the color conversion film configured to convert blue light from the subset of the plurality of blue sub-pixel emitters to red light.

23. The method of fabricating a display device according to claim 22 , wherein monolithically forming one or more green sub-pixel emitters and the plurality of blue sub-pixel emitters of the pixel on the substrate comprises:

forming a nucleation layer on the substrate;

forming a mask layer on the nucleation layer, the mask layer including a plurality of ring openings;

forming an n-doped core layer in rings disposed on the nucleation layer in the plurality of ring openings of the mask layer;

forming an active layer in rings disposed on the rings of n-doped core layer; and

forming a p-doped cladding layer in rings disposed on the rings of the active layer.

24. The method of fabricating a display device according to claim 23 , wherein,

a wavelength of the one or more green sub-pixel emitters is a function of one or more of a first cross section dimension of the rings of the active layer, a first diameter of the rings of the active layer, and a first concentration of Indium (In) of the active layer of an Indium Gallium Nitride/Gallium Nitride (InGaN/GaN) quantum well material; and

a wavelength of the plurality of blue sub-pixel emitters is a function of one or more of a second cross section dimension of the rings of the active layer, a second diameter of the rings of the active layer, and a second concentration of Indium (In) of the active layer of an Indium Gallium Nitride/Gallium Nitride (InGaN/GaN) quantum well material.

25. The method of fabricating a display device according to claim 23 , wherein the rings of the n-doped layer, the active layer and the p-doped layer include one of a coaxial core-shell cross section, a nanopyramid cross section, and an axial nanowire cross section.

26. The method of fabricating a display device according to claim 22 , wherein transferring the pixel from the substrate to the backplane comprises:

aligning anodes of the one or more green sub-pixel emitters and anodes of the plurality of blue sub-pixel emitters of a first set of the plurality of pixels of the wafer with corresponding anodes of the select drive circuits of a first backplane;

thermocompression bonding the anodes of the one or more green sub-pixel emitters and the anodes of the plurality of blue sub-pixel emitters of the first set of the plurality of pixels of the wafer with the corresponding anodes of the select drive circuits of the first backplane; and

de-bonding the one or more green sub-pixel emitters and the plurality of blue sub-pixel emitters of the first set of one of the plurality of pixels from the wafer.

27. The method of fabricating a display device according to claim 26 , wherein transferring the pixel from the substrate to the backplane further comprises:

aligning anodes of the one or more green sub-pixel light source and anodes of the plurality of blue sub-pixel emitters of a second set of the plurality of pixels of the wafer with corresponding anodes of the select drive circuits of a second backplane, wherein the second set of the plurality of pixels are offset by a predetermined pitch from the first set of the plurality of pixels of the wafer;

thermocompression bonding the anodes of the one or more green sub-pixel emitters and the anodes of the plurality of blue sub-pixel emitters of the second set of the plurality of pixels of the wafer with the corresponding anodes of the select drive circuits of the second backplane; and

de-bonding the one or more green sub-pixel emitters and the plurality of blue sub-pixel emitters of the second set of the plurality of pixels from the wafer.

28. The method of fabricating a display device according to claim 27 , wherein one or more bumps on the second backplane provide support between the wafer and the second backplane during the thermocompression bonding and the de-bonding.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Oct 22, 2018
From: SMITH, MARSHALL; AHMED, KHALED
To: INTEL CORPORATION
Reel/Frame 047260/0542 →
Cited By (2)
US 12,230,181 US 12,532,541