Display device
A display device includes a base layer including a display area and a non-display area, a pixel circuit layer disposed on a front surface of the base layer and including a driving transistor and a switch transistor, and an antistatic circuit layer disposed on a rear surface of the base layer and including at least one electrostatic diode.
1 . A display device comprising:
a base layer including a display area and a non-display area;
a pixel circuit layer disposed on a front surface of the base layer and including a driving transistor and a switch transistor; and
an antistatic circuit layer disposed on a rear surface of the base layer and including an electrostatic diode.
2 . The display device according to claim 1 , wherein the electrostatic diode is disposed to overlap the display area in a thickness direction of the base layer.
3 . The display device according to claim 2 , further comprising:
a driver IC disposed on a rear surface of the antistatic circuit layer,
wherein a line of the driver IC is electrically connected to the electrostatic diode.
4 . The display device according to claim 1 , wherein the electrostatic diode is in a transistor form.
5 . The display device according to claim 4 , wherein the electrostatic diode is a bottom gate type.
6 . The display device according to claim 1 , further comprising: a via hole passing through the front surface and the rear surface of the base layer.
7 . The display device according to claim 6 , wherein
the pixel circuit layer further includes a connection electrode, and
the connection electrode is electrically connected to the electrostatic diode of the antistatic circuit layer through the via hole.
8 . The display device according to claim 1 , wherein a width of the non-display area is less than or equal to about 1 mm in a plan view.
9 . The display device according to claim 1 , further comprising:
a pixel emission layer disposed on a front surface of the pixel circuit layer and including a light emitting element.
10 . The display device according to claim 9 , wherein
the pixel emission layer further comprises:
a first electrode electrically connected to the driving transistor; and
a second electrode disposed to be spaced apart from the first electrode, and
the light emitting element is electrically connected to the first electrode and the second electrode.
11 . The display device according to claim 10 , wherein a length of the light emitting element is in a range of about 100 nm to about 10 μm.
12 . The display device according to claim 9 , further comprising:
a color conversion element layer disposed on the front surface of the pixel emission layer and including a quantum dot.
13 . The display device according to claim 1 , wherein the electrostatic diode includes an oxide semiconductor.
14 . The display device according to claim 3 , wherein the antistatic circuit layer includes a first electrostatic diode and a second electrostatic diode electrically connected in series with each other.
15 . The display device according to claim 14 , wherein
the first electrostatic diode includes:
a first gate electrode;
a first semiconductor pattern overlapping the first gate electrode in the thickness direction of the base layer; and
a first source/drain electrode and a second source/drain electrode, each electrically contacting the first semiconductor pattern, and
the second electrostatic diode includes:
a second gate electrode;
a second semiconductor pattern overlapping the second gate electrode in the thickness direction; and
the second source/drain electrodes and a third source/drain electrode, each electrically contacting the second semiconductor pattern.
16 . The display device according to claim 15 , wherein the first source/drain electrode and the third source/drain electrode are different portions of an electrode pattern.
17 . The display device according to claim 15 , wherein the first gate electrode and the second gate electrode are separated from each other.
18 . The display device according to claim 15 , wherein
the first source/drain electrode is electrically connected to a connection electrode disposed in the pixel circuit layer, and
the third source/drain electrode is electrically connected to the line of the driver IC.
19 . The display device according to claim 14 , wherein the first electrostatic diode and the second electrostatic diode are diode-connected transistors electrically connected in opposite directions.
20 . A display device comprising:
a base layer;
a pixel circuit layer disposed on the base layer and including a driving transistor and a switch transistor; and
an antistatic circuit layer including at least one an electrostatic diode and disposed in a direction different from a direction the pixel circuit layer is disposed.
21 . The display device according to claim 20 , further comprising:
a pixel emission layer including a light emitting element, and disposed in a direction different from of the direction the antistatic circuit layer is disposed.
22 . The display device according to claim 21 , wherein the electrostatic diode is disposed to overlap an emission area defined by the light emitting element in a thickness direction of the base layer.
23 . The display device according to claim 20 , wherein
the pixel circuit layer is disposed on a front surface of the base layer, and
the antistatic circuit layer is disposed on a rear surface of the base layer.
24 . The display device according to claim 23 , wherein the antistatic circuit layer is formed after the pixel circuit layer is formed.
25 . The display device according to claim 20 , further comprising:
a via hole passing through between a front surface and a rear surface of the base layer,
wherein the via hole is formed after the pixel circuit layer is formed and before the antistatic circuit layer is formed.