Integrated circuit having contact jumper

1. An integrated circuit comprising:

first and second active regions each extending in a first direction;

a first gate line extending longitudinally across the first and second active regions in a second direction substantially perpendicular to the first direction; and

a first contact jumper comprising a first conductive pattern crossing the first gate line above the first active region, and a second conductive pattern extending longitudinally in the second direction above the first gate line and connected to the first conductive pattern.

2. The integrated circuit of claim 1 , wherein the first and second active regions are spaced in the second direction such that a middle region exists as interposed between the first and second active regions in the second direction, and the second conductive pattern extends over the middle region between the first and second active regions, further comprising a via disposed on the second conductive pattern at a location over the middle region.

3. The integrated circuit of claim 1 , wherein the first contact jumper further comprises a third conductive pattern crossing the first gate line above the second active region and connected to the second conductive pattern.

4. The integrated circuit of claim 3 , further comprising at least one second gate line parallel to the first gate line,

wherein the third conductive pattern crosses the first gate line and the at least one second gate line.

5. The integrated circuit of claim 1 , further comprising a second contact jumper crossing the first gate line above the second active region and spaced apart from the first contact jumper.

6. The integrated circuit of claim 1 , further comprising:

at least one second gate line parallel to the first gate line; and

a second contact jumper crossing the first gate line and the at least one second gate line above the second active region and spaced apart from the first contact jumper.

7. The integrated circuit of claim 1 , further comprising:

at least one second gate line parallel to the first gate line; and

a second contact jumper crossing the first gate line above the second active region and spaced apart from the first contact jumper,

wherein the first conductive pattern crosses the first gate line and the at least one second gate line.

8. The integrated circuit of claim 1 , further comprising:

first contacts on the first active region; and

a first metal pattern extending in the first direction above the first active region and disposed above and electrically connecting the first contacts.

9. The integrated circuit of claim 8 , further comprising:

second contacts on the second active region; and

a second metal pattern extending in the first direction above the second active region and disposed above and electrically connecting die second contacts,

wherein the second metal pattern is disposed at the same level in the integrated circuit as the first metal pattern.

10. The integrated circuit of claim 1 , wherein the first and second active regions are spaced in the second direction such that a middle region exists as interposed between the first and second active regions in the second direction, and the second conductive pattern extends over the middle region between the first and second active regions, further comprising:

a plurality of second gate lines parallel to the first gate line;

a first via disposed on the second conductive pattern at a location over the middle region between the first and second active regions;

second vias on the plurality of second gate lines in the middle region; and

metal patterns on the first via and the second vias and extending in the second direction.

11. The integrated circuit of claim 10 , wherein the metal patterns on the second vias have widths, in the first direction, that are substantially the same, and

the metal patterns on the second vias have lengths, in the second direction, that are substantially the same.

12. The integrated circuit of claim 10 , wherein the first via and the second vias are aligned in the first direction.

13. The integrated circuit of claim 10 , wherein the first conductive pattern crosses at least one of the second gate lines.

14. The integrated circuit of claim 1 , wherein the first conductive pattern comprises a first contact on the first active region, and the second conductive pattern comprises a second contact on the first gate line.

15. The integrated circuit of claim 14 , further comprising a cutting region above the first gate line.

16. The integrated circuit of claim 1 , further comprising first and second trench silicides on both sides of the first gate line in the first active region and extending in the second direction,

wherein the first conductive pattern comprises a first contact on the first and second trench silicides and the second conductive pattern comprises a second contact on the first gate line.

17. The integrated circuit of claim 16 , further comprising a cutting region above the first gate line.

18. The integrated circuit of claim 1 , further comprising first and second contacts on both sides of the first gate line in the first active region,

wherein the first conductive pattern is disposed on and electrically connects the first and second contacts and the second conductive pattern is electrically insulated from the first gate line.

19. An integrated circuit comprising:

first and second active regions each extending in a first direction;

first and second gate lines spaced from each other in the first direction, each of the first and second gate lines extending longitudinally across the first and second active regions in a second direction substantially perpendicular to the first direction; and

a first contact jumper comprising a first conductive pattern crossing the first and second gate lines above the first active region and a second conductive pattern extending longitudinally in the second direction between the first and second gate lines as viewed in a plan view of the integrated circuit and connected to the first conductive pattern.

20. The integrated circuit of claim 19 , wherein the first and second active regions are spaced in the second direction such that a middle region exists as interposed between the first and second active regions in the second direction, and the second conductive pattern extends over the middle region between the first and second active regions, further comprising a via disposed on the second conductive pattern at a location over the middle region.

21. The integrated circuit of claim 19 , wherein the first contact jumper further comprises a third conductive pattern crossing the first and second gate lines above the second active region and connected to the second conductive pattern.

22. The integrated circuit of claim 19 , further comprising a second contact jumper crossing the first and second gate lines above the second active region and spaced apart from the first contact jumper.

23. An integrated circuit comprising:

first and second active regions each extending in a first direction and spaced in a second direction substantially perpendicular to the first direction such that a middle region exists as interposed between the first and second active regions in the second direction;

first and second gate lines spaced from each other in the first direction, each of the first and second gate lines extending longitudinally across the first and second active regions and the middle region in the second direction;

a contact jumper comprising a first conductive pattern crossing the first gate line above the first active region and a second conductive pattern extending longitudinally in the second direction above the first gate line and connected to the first conductive pattern;

first and second vias aligned with each other in the first direction in the middle region between the first and second active regions, wherein the first via is disposed on the second conductive pattern and the second via is located above the second gate line; and

a first metal layer comprising a first metal pattern extending in the first direction above the first active region, a second metal pattern extending in the first direction above the second active region, and a plurality of third metal patterns extending in the second direction in the middle region and respectively disposed on the first and second vias.

24. The integrated circuit of claim 23 , wherein the contact jumper further comprises a third conductive pattern crossing the first and second gate lines above the second active region and connected to the second conductive pattern.

25. The integrated circuit of claim 24 , wherein the third metal patterns have widths, in the first direction, that are substantially the same, and

the third metal patterns have lengths, in the second direction, that are substantially the same.

26. The integrated circuit of claim 24 , further comprising:

third vias arranged on the third metal patterns, respectively; and

a second metal layer comprising fourth metal patterns disposed on the third vias, respectively, each of the fourth metal patterns extending longitudinally in the second direction,

wherein the fourth metal patterns have widths, in the first direction, that are substantially the same, and

the fourth metal patterns have lengths, in the second direction, that are substantially the same.

27. A semiconductor device comprising:

a substrate having first and second active regions each elongated in a first direction and spaced in a second direction substantially perpendicular to the first direction, and a middle region interposed between the first and second active regions in the second direction;

gate lines spaced from each other in the first direction, each of the gate lines extending longitudinally across the first and second active regions and the middle region in he second direction;

a layer of contacts on the substrate and having upper surfaces substantially coplanar at a level above the substrate,

the layer of contacts including a contact jumper comprising a first conductive pattern elongated in the first direction and crossing at least one of the gate lines in the first direction above the first active region of the substrate, and a second conductive pattern extending from the first conductive pattern longitudinally in the second direction over at least part of the middle region of the substrate;

a layer of vias on the layer of contacts, each of the vias extending on the upper surface of a respective one of the contacts, and the layer of vias including a plurality of vias disposed over the middle region of the substrate as aligned with each other in the first direction; and

a first metallization layer on the layer of vias,

wherein only one track of metal in the first metallization layer extends over the first active region, and

only one track of metal in the first metallization layer extends over the second active region, and

each of the tracks of metal extends across the gate lines in the first direction.

28. The semiconductor device of claim 27 , wherein the first metallization layer includes a first metal pattern extending longitudinally in the first direction above the first active region of the substrate and constituting the track of metal extending over the first active region, a second metal pattern extending longitudinally in the first direction above the second active region and constituting the track of metal extending over the second active region, and third metal patterns each extending longitudinally in the second direction over the middle region of the substrate and each disposed on a respective one the plurality of vias.

29. The semiconductor device of claim 27 , wherein the second conductive pattern of the contact jumper extends longitudinally in the second direction over one of the gate lines, and a first one of the plurality of vias is disposed on the second conductive pattern so as to be disposed on said one of the gate lines at a location over the middle region of the substrate.

30. The semiconductor device of claim 28 , further comprising a second layer of vias on the first metallization layer, the vias of the second layer being disposed on the third metal patterns, respectively.

31. The semiconductor device of claim 30 , further comprising a second metallization layer on the second layer of vias and comprising a plurality of discrete metal patterns disposed on the vias of the second layer, respectively.