IP Library Granted Patent US 11,257,526
Granted Patent B2
US 11,257,526 · App. 15/868,304 · Granted Feb 22, 2022

Sector-aligned memory accessible to programmable logic fabric of programmable logic device

Inventors: Scott J. Weber (Piedmont, CA); Sean R. Atsatt (Santa Cruz, CA); Ravi Prakash Gutala (San Jose, CA); Aravind Raghavendra Dasu (Milpitas, CA); Jun Pin Tan (Kuala Lumpur, MY)
Assignee: Intel Corporation
G11C5/025G11C5/04H03K19/1776G11C5/06
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Quick Facts
Patent No.
US 11,257,526
App. No.
15/868,304
Granted
Feb 22, 2022
Kind
B2
Abstract

An integrated circuit device may include programmable logic fabric on a first integrated circuit die and sector-aligned memory on a second integrated circuit die to enable large amounts of data to be rapidly processed by a sector of programmable logic of the programmable logic device. The programmable logic fabric may include a first and second sectors. The first sector may be programmed with a circuit design that operates on a first set of data. The sector-aligned memory may include a first sector of sector-aligned memory directly accessible by the first sector of programmable logic fabric and a second sector of sector-aligned memory directly accessible by the second sector of programmable logic fabric. The first sector of sector-aligned memory may store the first set of data.

Claims (37)

1. An integrated circuit device comprising:

programmable logic fabric disposed on a first integrated circuit die, wherein the programmable logic fabric comprises a first sector of programmable logic fabric and a second sector of programmable logic fabric, wherein the first sector of programmable logic fabric is configured to be programmed with a circuit design that operates on a first set of data; and

sector-aligned memory disposed on a second integrated circuit die, wherein the sector-aligned memory comprises a first sector of sector-aligned memory directly accessible by the first sector of programmable logic fabric and a second sector of sector-aligned memory directly accessible by the second sector of programmable logic fabric, wherein the first sector of sector-aligned memory is configured to store the first set of data.

2. The integrated circuit device of claim 1 , wherein:

the first integrated circuit die and the second integrated circuit die are vertically stacked; and

the first sector of programmable logic fabric is aligned with the first sector of sector-aligned memory.

3. The integrated circuit device of claim 1 , wherein the first sector of programmable logic fabric comprises in-fabric memory having a first memory capacity, wherein the first sector of sector-aligned memory has a second memory capacity greater than or equal to the first memory capacity.

4. The integrated circuit device of claim 3 , wherein the second memory capacity is greater than or equal to 100 times the first memory capacity.

5. The integrated circuit device of claim 1 , wherein the first sector of programmable logic fabric comprises in-fabric memory configured to be written with data from the sector-aligned memory.

6. The integrated circuit device of claim 5 , wherein the in-fabric memory is configured to be written with the data from the sector-aligned memory in a pipelined manner.

7. The integrated circuit device of claim 1 , wherein the first sector of programmable logic fabric comprises a first set of configuration memory having a first memory capacity, wherein the first sector of sector-aligned memory has a second memory capacity greater than or equal to the first memory capacity.

8. The integrated circuit device of claim 1 , wherein the first sector of sector-aligned memory is configured to be accessible by the first sector of programmable logic fabric in parallel while the second sector of sector-aligned memory is accessible by the second sector of programmable logic fabric.

9. A programmable logic device comprising:

a first sector of programmable logic fabric disposed in a first integrated circuit die, wherein the first sector of programmable logic fabric comprises a first set of programmable logic elements controlled by a respective first set of configuration memory cells;

a second sector of programmable logic fabric disposed in the first integrated circuit die, wherein the second sector of programmable logic fabric comprises a second set of programmable logic elements controlled by a respective second set of configuration memory cells;

a first sector of a sector-aligned memory disposed in a second integrated circuit die, wherein the first sector of the sector-aligned memory is connected to the first sector of programmable logic fabric via a first physical connection; and

a second sector of the sector-aligned memory disposed in the second integrated circuit die, wherein the second sector of the sector-aligned memory is connected to the second sector of programmable logic fabric via a second physical connection distinct from the first physical connection.

10. The programmable logic device of claim 9 , wherein:

the first integrated circuit die and the second integrated circuit die are vertically stacked; and

the first sector of programmable logic fabric is aligned with the first sector of the sector-aligned memory; and

the second sector of programmable logic fabric is aligned with the second sector of the sector-aligned memory.

11. The programmable logic device of claim 9 , wherein the first physical connection and the second physical connection are configured to enable a first data transfer between the first sector of the sector-aligned memory and the first sector of programmable logic fabric in parallel with a second data transfer between the second sector of the sector-aligned memory and the second sector of programmable logic fabric.

12. The programmable logic device of claim 9 , comprising a first sector controller associated with the first sector of programmable logic fabric, wherein the first sector controller is configured to handle a request deriving from a circuit design implemented in the first sector of programmable logic fabric, wherein the request comprises a request to transfer data between the first sector of the sector-aligned memory and the first sector of programmable logic fabric.

13. The programmable logic device of claim 9 , comprising:

first in-fabric memory disposed on the first integrated circuit die and associated with the first sector of programmable logic fabric; and

a first address register/data register configured to program the first in-fabric memory.

14. The programmable logic device of claim 13 , comprising a first sector controller associated with the first sector of programmable logic fabric, wherein the first sector controller is configured to control the programming of the first in-fabric memory by controlling the first address register/data register.

15. The programmable logic device of claim 13 , comprising:

a first sector controller associated with the first sector of programmable logic fabric; and

a first memory manager circuit associated with the first sector of programmable logic fabric, wherein the first sector controller is configured to coordinate the programming of the first in-fabric memory by instructing the first memory manager circuit to cause the first address register/data register to pipeline data into the first in-fabric memory.

16. A method for operating a programmable logic device, the method comprising:

requesting, by a circuit design implemented in a first sector of programmable logic fabric on a first integrated circuit die, a data transfer from the first sector of programmable logic fabric to an associated first sector of memory disposed on a second integrated circuit die or to the first sector of programmable logic fabric from the associated first sector of memory; and

in response to the request, using memory control circuitry disposed in the first integrated circuit die, the second integrated circuit die, or both, carrying out the data transfer from the first sector of programmable logic fabric to the associated first sector of memory disposed on the second integrated circuit die or to the first sector of programmable logic fabric from the associated first sector of memory.

17. The method of claim 16 , wherein the request is provided via a hardened interface of the first sector of programmable logic fabric.

18. The method of claim 17 , wherein the data transfer is carried out via a direct transfer between the hardened interface of the first sector of programmable logic fabric and the associated first sector of memory.

19. The method of claim 16 , wherein the data transfer is carried out by an address register/data register via a data pathway between the address register/data register and the associated first sector of memory.

20. The method of claim 19 , wherein carrying out the data transfer comprises reading data out of the first sector of programmable logic fabric through the address register/data register to the associated first sector of memory.

Assignments (3)
SECURITY INTEREST Recorded Sep 12, 2025
From: ALTERA CORPORATION
To: BARCLAYS BANK PLC, AS COLLATERAL AGENT
Reel/Frame 073431/0309 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jan 19, 2024
From: INTEL CORPORATION
To: ALTERA CORPORATION
Reel/Frame 066353/0886 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jan 15, 2018
From: WEBER, SCOTT J.; ATSATT, SEAN R.; GUTALA, RAVI PRAKASH; DASU, ARAVIND RAGHAVENDRA; TAN, JUN PIN
To: INTEL CORPORATION
Reel/Frame 044620/0647 →