Substrate processing apparatus, method for manufacturing semiconductor device and vaporizer

1. A vaporizer comprising:

a vaporization chamber having a tapered first portion and a tapered second portion;

a first fluid supply part connected to the tapered first portion of the vaporization chamber, and configured to supply a mixed fluid, in which a first carrier gas from an injection port and a liquid precursor in a mist state are mixed, toward the tapered second portion;

a second fluid supply part including a first plurality of holes formed at a center portion of the second fluid supply part and the tapered second portion and configured to supply a second carrier gas toward the mixed fluid, and a second plurality of holes formed around a circumference of the first plurality of holes and configured to send a flow passage of gas along the tapered second portion; and

one or more discharge holes installed on a sidewall of the vaporization chamber configured to supply a precursor gas to a process chamber,

wherein the first fluid supply part includes at least a nozzle configured to supply the liquid precursor,

wherein the first fluid supply part is configured such that the first carrier gas, which has passed through the injection port, passes through an opening of the injection port, reaches a leading end of the nozzle, and converts the liquid precursor into the mist state,

wherein the second fluid supply part is configured such that the second carrier gas is supplied from the first plurality of holes toward the mixed fluid of the first carrier gas and the liquid precursor in the mist state,

wherein the flow passage of gas, which includes the second carrier gas from the second plurality of holes, any of the second carrier gas from the first plurality of holes, the mixed fluid, and a vaporized gas that is vaporized from the mixed fluid by the second carrier gas, is formed on the sidewall of the vaporization chamber, and

wherein the precursor gas, which includes any of the second carrier gas, the mixed fluid, and the vaporized gas, flows through the one or more discharge holes, and to the process chamber.

2. The vaporizer of claim 1 , wherein the first fluid supply part further includes at least a carrier gas chamber communicating with the vaporization chamber via the injection port, and

wherein the leading end of the nozzle is configured to protrude from the opening of the injection port toward the vaporization chamber.

3. The vaporizer of claim 2 , wherein the opening of the injection port is formed around the leading end of the nozzle, and

wherein a flow velocity of the first carrier gas supplied from the opening to the vaporization chamber is higher than a flow velocity of the liquid precursor supplied from the nozzle.

4. The vaporizer of claim 1 , wherein the second carrier gas is a heated inert gas.

5. The vaporizer of claim 1 , wherein an opening sectional area of a guide portion of the vaporization chamber and a sectional area of the first plurality of holes formed at the center portion of the tapered second portion are equal in size.

6. The vaporizer of claim 1 , wherein the one or more discharge holes include a plurality of discharge holes, and

wherein the plurality of discharge holes are formed at an equal interval in a circumferential direction on the sidewall of the vaporization chamber.

7. The vaporizer of claim 1 , wherein a sectional area of the first plurality of holes formed at the center portion of the second portion is larger than a sectional area of the injection port at the tapered first portion.

8. The vaporizer of claim 1 , wherein the one or more discharge holes are configured such that the mixed fluid, which is supplied from the first fluid supply part, discharges the vaporized gas, which is heated and supplied from the second fluid supply part, from the vaporization chamber.

9. The vaporizer of claim 1 , wherein an inner diameter of the injection port is configured to be in a range of 30 to 300 μm.

10. The vaporizer of claim 1 , wherein a flow rate of the second carrier gas supplied from the second fluid supply part is seven or more times a flow rate of the mixed fluid supplied from the first fluid supply part.

11. A substrate processing apparatus comprising:

a process chamber configured to accommodate a substrate, and

a precursor gas supply system configured to supply a vaporized gas obtained by vaporizing a liquid precursor by a vaporizer, as a precursor gas, to the process chamber, the vaporizer including:

a vaporization chamber having a tapered first portion and a tapered second portion;

a first fluid supply part connected to the tapered first portion of the vaporization chamber, and configured to supply a mixed fluid, in which a first carrier gas from an injection port and the liquid precursor in a mist state are mixed, toward the tapered second portion;

a second fluid supply part including a first plurality of holes formed at a center portion of the second fluid supply part and the tapered second portion and configured to supply a second carrier gas toward the mixed fluid, and a second plurality of holes formed around a circumference of the first plurality of holes and configured to send a flow passage of gas along the tapered second portion; and

one or more discharge holes installed on a sidewall of the vaporization chamber configured to supply the precursor gas to the process chamber,

wherein the first fluid supply part includes at least a nozzle configured to supply the liquid precursor,

wherein the first fluid supply part is configured such that the first carrier gas, which has passed through the injection port, passes through an opening of the injection port, reaches a leading end of the nozzle, and converts the liquid precursor into the mist state,

wherein the second fluid supply part is configured such that the second carrier gas is supplied from the first plurality of holes toward the mixed fluid of the first carrier gas and the liquid precursor in the mist state,

wherein the flow passage of gas, which includes the second carrier gas from the second plurality of holes, any of the second carrier gas from the first plurality of holes, the mixed fluid, and a vaporized gas that is vaporized from the mixed fluid by the second carrier gas, is formed on the sidewall of the vaporization chamber, and

wherein the precursor gas, which includes any of the second carrier gas, the mixed fluid, and the vaporized gas, flows through the one or more discharge holes, and to the process chamber.

12. A method for manufacturing a semiconductor device by using a vaporizer comprising:

a vaporization chamber having a tapered first portion and a tapered second portion;

a first fluid supply part connected to the tapered first portion of the vaporization chamber, and configured to supply a mixed fluid, in which a first carrier gas from an injection port and a liquid precursor in a mist state are mixed, toward the tapered second portion;

a second fluid supply part including a first plurality of holes formed at a center portion of the second fluid supply part and the tapered second portion and configured to supply a second carrier gas toward the mixed fluid, and a second plurality of holes formed around a circumference of the first plurality of hole and configured to send a flow passage of vas along the tapered second portion; and

one or more discharge holes installed on a sidewall of the vaporization chamber configured to supply a precursor gas to a process chamber,

wherein the first fluid supply part includes at least a nozzle configured to supply the liquid precursor,

wherein the first fluid supply part is configured such that the first carrier gas, which has passed through the injection port, passes through an opening of the injection port, reaches a leading end of the nozzle, and converts the liquid precursor into the mist state,

wherein the second fluid supply part is configured such that the second carrier gas is supplied from the first plurality of holes toward the mixed fluid of the first carrier gas and the liquid precursor in the mist state,

wherein the flow passage of gas, which includes the second carrier gas from the second plurality of holes, any of the second carrier gas from the first plurality of holes, the mixed fluid, and a vaporized gas that is vaporized from the mixed fluid by the second carrier gas, is formed on the sidewall of the vaporization chamber,

wherein the precursor gas, which includes any of the second carrier gas, the mixed fluid, and the vaporized gas, flows through the one or more discharge holes, and to the process chamber,

wherein the method comprising:

forming the precursor gas by:

supplying the liquid precursor and the first carrier gas to the first fluid supply part to form a mist toward the tapered second portion; and

supplying the second carrier gas through the first plurality of holes toward the mixed fluid and the second plurality of holes in the second fluid supply part to the flow passage of gas on the sidewall of the vaporization chamber;

supplying the precursor gas to the process chamber that accommodates a substrate;

removing the precursor gas from the process chamber;

supplying a reaction gas to the process chamber from which the precursor gas is removed; and

removing the reaction gas from the process chamber.