Targets and processes for fabricating same
View Patent ↗In one embodiment, the present disclosure provides a target or mold having one or more support arms coupled to a substrate. The support arm can be used in handling or positioning a target. In another embodiment, the present disclosure provides target molds, targets produced using such molds, and a method for producing the targets and molds. In various implementations, the targets are formed in a number of disclosed shapes, including a funnel cone, a funnel cone having an extended neck, those having Gaussian-profile, a cup, a target having embedded metal slugs, metal dotted foils, wedges, metal stacks, a Winston collector having a hemispherical apex, and a Winston collector having an apex aperture. In yet another embodiment, the present disclosure provides a target mounting and alignment system.
1. A structure for facilitating proton generation, the structure comprising:
a handling die, the handling die containing an aperture;
a destructible laser target located in the aperture, the destructible laser target configured to emit protons upon irradiation;
a support structure for coupling the destructible laser target to the handling die prior to irradiation of the destructible laser target; and
a piezoresistive element;
wherein the destructible laser target is configured to be decoupled from the handling die at a time of irradiating the destructible laser target.
2. The structure of claim 1 , wherein the support structure laterally couples the destructible laser target to the handling die.
3. The structure of claim 1 , wherein at least one of a depth of the aperture, a position of the aperture, and an orientation of the aperture is configured to control a relative alignment of the destructible laser target with a second destructible laser target.
4. The structure of claim 1 comprising at least one other support structure for coupling the destructible laser target to the handling die prior to irradiation of the destructible laser target.
5. The structure of claim 1 , wherein the support structure is a cantilever.
6. The structure of claim 5 , wherein the support structure has a cross-section with a dimension less than 15 μm 2 .
7. The structure of claim 1 , wherein the piezoresistive element is configured to facilitate application of an electric charge to the destructible laser target.
8. The structure of claim 7 , further comprising a conductive lead coupled to a piezoresistive element.
9. The structure of claim 7 , further comprising a conductive lead configured to influence types of particles emitted upon irradiation of the destructible laser target.
10. The structure of claim 9 , wherein the conductive lead is configured to cause electron emission upon irradiation of the destructible laser target.
11. The structure of claim 7 , further comprising a conductive lead at least partially located on at least one of the support structure and the handling die.
12. The structure of claim 1 , wherein the piezoresistive element is located proximate to the destructible laser target.
13. The structure of claim 12 , wherein the piezoresistive element is located at least one of above and below the destructible laser target.
14. The structure of claim 1 , wherein the piezoresistive element is configured to facilitate application of an electric charge to the destructible laser target.
15. The structure of claim 14 , further configured to facilitate application of the electric charge to the destructible laser target immediately prior to the time of irradiating the destructible laser target.
16. The structure of claim 1 , wherein the piezoresistive element is at least partially located on at least one of the support structure and the handling die.
17. The structure of claim 16 , wherein the piezoresistive element is configured to facilitate application of an electric current to the support structure.
18. The structure of claim 17 , further configured to facilitate application of the electric current to the support structure immediately prior to the time of irradiating the destructible laser target.
19. The structure of claim 17 , wherein the piezoresistive element is configured to be heated upon application of the electric current.
20. The structure of claim 1 , wherein the piezoresistive element is configured to influence types of particles emitted upon irradiation of the destructible laser target.
21. The structure of claim 20 , wherein the piezoresistive element is configured to cause electron emission upon irradiation of the destructible laser target.